• 제목/요약/키워드: metal passivation

검색결과 121건 처리시간 0.026초

Synthesis of Nickel and Copper Nanopowders by Plasma Arc Evaporation

  • Cho, Young-Sang;Moon, Jong Woo;Chung, Kook Chae;Lee, Jung-Goo
    • 한국분말재료학회지
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    • 제20권6호
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    • pp.411-424
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    • 2013
  • In this study, the synthesis of nickel nanoparticles and copper nanospheres for the potential applications of MLCC electrode materials has been studied by plasma arc evaporation method. The change in the broad distribution of the size of nickel and copper nanopowders is successfully controlled by manifesting proper mixture of gas ambiance for plasma generation in the size range of 20 to 200 nm in diameter. The factors affecting the mean diameter of the nanopowder was studied by changing the composition of reactive gases, indicating that nitrogen enhances the formation of larger particles compared to hydrogen gas. The morphologies and particle sizes of the metal nanoparticles were observed by SEM, and ultrathin oxide layers on the powder surface generated during passivation step have been confirmed using TEM. The metallic FCC structure of the nanoparticles was confirmed using powder X-ray diffraction method.

금속 CMP 적용을 위한 산화제의 역할 (Role of Oxidants for Metal CMP Applications)

  • 서용진;김상용;이우선
    • 한국전기전자재료학회논문지
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    • 제17권4호
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    • pp.378-383
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    • 2004
  • Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt% oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

경산시 임당유적 출토 유물 보존처리-금속 및 칠기유물을 중심으로 (Conservation of artifacts excavated from Imdang, Kyǒngsan Province-Metals and Lacquerware)

  • 유재은;신의경;황진주;고동하
    • 보존과학연구
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    • 통권19호
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    • pp.109-132
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    • 1998
  • According to excavation of Imdang site, these sites were excavated place to a various of sites from Early lron period to the Koryo Kingdom. Artifacts to be conserved were excavated from A, D and E district. Metal artifacts were excavated from D and E district and lacquer ware artifacts were excavated from Adistrict. Metal artifacts including lacquer ware iron sword, imitative bronze mirror, Osujen and bronze artifact with letter and so on. Bronze artifacts were covered with soil and rust and performed consolidation after passivation treatment with Benzotriazole solution. Also, iron artifacts performed desalting treatment with 0.1M sesquicarbonate solution. After desalinization, adhesive of these artifacts were processed with Araldite(rapid type) after consolidation with20%∼30% NAD-10 solution. Lacquer ware artifacts remained fragments of lacquer to be all corroded and soiled. Therefore these artifacts retained its original form. Fragments of lacquer joined with Caparol 1%∼3% solution and the soil of relics coated with PSNY 3%∼6% solution. There were many kinds of lacquer were. Lacquer ware artifacts presumed to a string instrument that provide important clues for lacquer ware research. As for lacquer fragments inquire, paints grain size were $2∼5\mum$ and conformed to vanished three times.

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Degradation of Chlorinated Phenols by Zero Valent Iron and Bimetals of Iron: A Review

  • Gunawardana, Buddhika;Singhal, Naresh;Swedlund, Peter
    • Environmental Engineering Research
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    • 제16권4호
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    • pp.187-203
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    • 2011
  • Chlorophenols (CPs) are widely used industrial chemicals that have been identified as being toxic to both humans and the environment. Zero valent iron (ZVI) and iron based bimetallic systems have the potential to efficiently dechlorinate CPs. This paper reviews the research conducted in this area over the past decade, with emphasis on the processes and mechanisms for the removal of CPs, as well as the characterization and role of the iron oxides formed on the ZVI surface. The removal of dissolved CPs in iron-water systems occurs via dechlorination, sorption and co-precipitation. Although ZVI has been commonly used for the dechlorination of CPs, its long term reactivity is limited due to surface passivation over time. However, iron based bimetallic systems are an effective alternative for overcoming this limitation. Bimetallic systems prepared by physically mixing ZVI and the catalyst or through reductive deposition of a catalyst onto ZVI have been shown to display superior performance over unmodified ZVI. Nonetheless, the efficiency and rate of hydrodechlorination of CPs by bimetals depend on the type of metal combinations used, properties of the metals and characteristics of the target CP. The presence and formation of various iron oxides can affect the reactivities of ZVI and bimetals. Oxides, such as green rust and magnetite, facilitate the dechlorination of CPs by ZVI and bimetals, while oxide films, such as hematite, maghemite, lepidocrocite and goethite, passivate the iron surface and hinder the dechlorination reaction. Key environmental parameters, such as solution pH, presence of dissolved oxygen and dissolved co-contaminants, exert significant impacts on the rate and extent of CP dechlorination by ZVI and bimetals.

고품질 polysilicon/tunneling oxide 기반의 에미터 형성 공정에서의 Auger 재결합 조절 연구 (Study on Auger Recombination Control using Barrier SiO2 in High-Quality Polysilicon/Tunneling oxide based Emitter Formation)

  • 이희연;홍수범;김동환
    • Current Photovoltaic Research
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    • 제12권2호
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    • pp.31-36
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    • 2024
  • Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiOx) and poly-Si. In poly-Si/SiOx based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO2) as a doping barrier before doping and analyzed the barrier effect of SiO2. In the experiments, p+ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high Voc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied Voc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

Electrochemical Oxidation of Ethanol at $RuO_2-Modified$ Nickel Electrode in Alkaline Media Studied by Electrochemical Impedance Spectroscopy

  • Kim Jae-Woo;Park Su-Moon
    • 전기화학회지
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    • 제3권2호
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    • pp.76-80
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    • 2000
  • Electrochemical oxidation of ethanol has been studied at nickel and $RuO_2-modified$ nickel electrodes in 1 M KOH using electrochemical impedance spectroscopy. Equivalent circuits have been worked out from simulation of impedance data to model oxidation of ethanol as well as the passivation of the electrode. The charge-transfer resistances for oxidation of these electrodes became smaller in the presence of ethanol than in its absence. The nickel substrate facilitated ethanol oxidation at $RuO_2-modified$ nickel electrodes. We also describe the Performance of nanosized electrocatalysts of the same composition in comparison to those of the bulk electrodes. The nanosized electrodes were obtained by electrode-positing the alloy from complexed form of these metal ions with fourth and fifth generation polyamidoamine dendrimers.

3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Kim, Yong-Hae;Chung, Choong-Heui;Moon, Jae-Hyun;Lee, Su-Jae;Kim, Gi-Heon;Song, Yoon-Ho
    • ETRI Journal
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    • 제30권2호
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    • pp.308-314
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    • 2008
  • In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.

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A High Aperture Mobile in the FFS TFT-LCD by the using Fine Patterning Process

  • Yun, Hee-Jung;Lim, Yun-Sik;Choi, Seung-Jin;Bin, Jin-Ho;Park, Jong-Kyun;Park, Min-Hwan;Lee, Yan-Ho;Ihm, Sam-Ho;Lim, Young-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.826-829
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    • 2006
  • In order to increase the transmittance of panel, in process of FFS TFT-LCD, fine patterning process which is adopted to the optimum passivation(PVX) hole was applied fine metal line patterning process and was made with optimum efficiency of liquid crystal by using space/bar size control of pixel electrode. We fabricated 2.03" mobile FFS devices with fine patterning process. Further, this technology will be applied to the basis of other process for higher PPI or higher aperture ratio technology.

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UMG 실리콘 기판의 Phosphorus 확산을 이용한 금속불순물 게터링 (Gettering of Metal Impurity in UMG Silicon Wafer using Phosphorus Diffusion)

  • 윤성연;김정;김은영;음정현;최균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.236-236
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    • 2010
  • P-type의 단결정, 다결정, UMG 기판을 이용하여 phosphorus툴 확산시킨 후 열처리한 external gettering 방식으로 실리콘 내부에 있는 불순물을 제거하였고, 기판의 lifetime 변화를 $\mu$-PCD를 이용하여 측정하였다. phosphorus를 $850^{\circ}C$에서 기판 내부로 20분 확산시킨 후 기판의 온도와 시간을 변화시키면서 gettering 공정을 시행하였다. 에미터층으로 인해 기판의 bulk lifetime이 부정확해 지는 것을 방지하기 위해서 NaOH를 이용하여 에미터층을 제거한 후 $\mu$-PCD를 이용하여 lifetime을 측정하였다. 또한 기판의 표면효과를 최소화하기 위해서 lifetime 측정전에 iodine을 이용하여 표면 passivation을 하였다.

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2.5Gbps 광통신용 InGaAs separate absorption grading multiplication (SAGM) advanche photodiode의 제작 및 특성분석 (Fabrication and characterization of InGaAs Separate Absorption Grading Multiplication Avalache Photodiodes for 2.5 Gbps Optical Fiber Communication System)

  • 유지범;박찬용;박경현;강승구;송민규;오대곤;박종대;김흥만;황인덕
    • 한국광학회지
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    • 제5권2호
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    • pp.340-346
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    • 1994
  • 2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

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