• Clean Technology
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• v.24 no.3
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• pp.249-254
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• 2018

In order to improve the photo conversion efficiency (${\eta}$) of dye-sensitized solar cells (DSSCs), the electrospun $TiO_2$, $SiO_2$, $ZrO_2$ and $SnO_2$ nanofibers were added into the hydrothermally prepared $TiO_2$ nanoparticles for application to a photoelectrode for DSSCs. The $TiO_2$ nanofiber added photoelectrode exhibited a higher photo current density ($J_{sc}$) compared to the bare $TiO_2$ nanoparticles, which is caused from acceleration of the transfer of excited electron from dye molecule due to the nanofiber structure. The DSSCs with $SiO_2$ nanofibers shows a higher open circuit voltage ($V_{oc}$) of 0.67 V and the highest photo conversion efficiency was found to be 6.24%.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.118-125
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• 1986

A small scale combustion unit was built to evaluate the CO suppression effects by various chemical additives added to coal briquettes. Among the additives tested comprising various transition metal compounds with catalytic activities, natural minerals and oxidizing agents, the copper component has shown the best CO suppression effect, and in particular, copper oxide dispersed on porous supports such as ${\gamma}-Al_2O_3$ was most effective. For instance, 0.5% of copper added to coal briquettes in this way bas exhibited 1.4 % CO in the combustion gas at the ignition and beginning stage of combustion and 0.3 % CO at the final stage. The effects of calcium compounds on the fixation of sulfur in coal were also evaluated to reduce the contents of sulfur compounds in the combustion gases.

• Corrosion Science and Technology
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• v.11 no.6
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• pp.280-285
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• 2012

Aluminum is on active metal, but it is well known that its oxide film plays a role as protective barrier which is comparatively stable in air and neutral aqueous solution. Thus, aluminum alloys have been widely applied in architectural trim, cold & hot-water storage vessels and piping etc., furthermore, the aluminum alloy of AC8A have been widely used in mold casting material of engine piston because of its properties of temperature and wear resistance. In recent years, the oil price is getting higher and higher, thus the using of low quality oil has been significantly increased in engines of ship and vehicle. Therefore it is considered that evaluation of corrosion resistance as well as wear resistance of AC8A material is also important to improve its property and prolong its lifetime. In this study, the effect of solution and tempering heat treatment to corrosion and wear resistance is investigated with electrochemical method and measurement of hardness. The hardness decreased with solution heat treatment compared to mold casting condition, but its value increased with tempering heat treatment and exhibited the highest value of hardness with tempering heat treatment temperature at $190^{\circ}C$ for 24hrs. Furthermore, corrosion resistance increased with decreasing of the hardness, and decreased with increasing of the hardness reversely. As a result, it is suggested that the optimum heat treatment to improve both corrosion and wear resistance is tempering heat treatment temperature at $190^{\circ}C$ for 16hrs.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.227-231
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• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Fire Science and Engineering
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• v.33 no.4
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• pp.70-76
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• 2019

This paper reports development of a low-power standalone heat detector using a Critical-Temperature Switch. The Critical-Temperature Switch, which is a thermally sensitive and passive component whose resistance decreases significantly at 70 ℃ due to a metal-insulator transition, provides reliable temperature measurements. This digital-like behavior of the Critical-Temperature Switch can detect fires without a microcontroller, meaning that it can minimize the power consumption of the standalone heat detector. The experimental results showed that the standalone heat detector using the Critical-Temperature Switch complied with the Notification of the National Emergency Management Agency. Compared to conventional standalone heat detectors, only 70% of the power was consumed monitoring the fires.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.7
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• pp.874-880
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• 2007

Volatile flavor compounds of 4 grape species (Campbell, Sheridan, Red globe, and Meoru) were identified during 3-day storage at either $4^{\circ}C$ or room temperature. Each sample was analyzed by solid-phase micro-extraction (SPME) method combined with gas chromatography-mass spectrometry. Also electronic nose composed of 12 different metal oxide sensors was used to differentiate flavors of grapes. Sensitivities (delta $R_{gas}/R_{air}$) of sensors from electronic nose were obtained by principal component analysis (PCA). Proportion of the first principal component was 99.30% at $4^{\circ}C$ and 99.36% at room temperature, respectively. In our result, flavor patterns of grape can be differentiated according to the storage period. The major volatile flavor compounds were 1-hexanol, hexanoic acid and its ethyl ester, and phenylethyl alcohol with the presence of butanoic acid and its ethyl ester, acetic acid, benzeneacetic acid and its ethyl ester.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.