• Title/Summary/Keyword: metal mobility

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The Applicability of the Acid Mine Drainage Sludge in the Heavy Metal Stabilization in Soils (산성광산배수슬러지의 토양 중금속 안정화 적용 가능성)

  • Kim, Min-Suk;Min, Hyungi;Lee, Byeongjoo;Chang, Sein;Kim, Jeong-Gyu;Koo, Namin;Park, Jeong-Sik;Bak, Gwan-In
    • Korean Journal of Environmental Agriculture
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    • v.33 no.2
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    • pp.78-85
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    • 2014
  • BACKGROUND: Recent studies using various industrial wastes for heavy metal stabilization in soil were conducted in order to find out new alternative amendments. The acid mine drainage sludge(AMDS) contains lots of metal oxides(hydroxides) that may be useful for heavy metal stabilization not only waste water treatment but also soil remediation. The aim of this study was to investigate the applicability of acid mine drainage sludge for heavy metals stabilization in soils METHODS AND RESULTS: Alkali soil contaminated with heavy metals was collected from the agricultural soils affected by the abandoned mine sites nearby. Three different amounts(1%, 3%, 5%) of AMDS were applied into control soil and contaminated soil. For determining the changes in the extractable heavy metals, $CaCl_2$ and Mehlich-3 were applied as chemical assessments for metal stabilization. For biological assessments, lettuce(Lactuca sativa L.) and chinese cabbage(Brassica rapa var. glabra) were cultivated and accumulation of heavy metals on each plant were determined. It was revealed that AMDS reduced heavy metal mobility and bioavailability in soil, which resulted in the decreases in the accumulation of As, Cd, Cu, Pb, and Zn in each plant. CONCLUSION: Though the high level of heavy metal concentrations in AMDS, any considerable increase in the heavy metal availability was not observed with control and contaminated soil. In conclusion, these results indicated that AMDS could be applied to heavy metal contaminated soil as an alternative amendments for reducing heavy metal mobility and bioavailability.

The Analysis on Work Clothes' Clothing Comfort and Wearer Mobility of Welding and Grinding Workers in the Machine and Shipbuilding Industries (기계, 조선산업 용접 및 사상공정 근로자의 작업복 착의실태와 착용감 및 동작성능 연구)

  • Park, Gin-Ah;Park, Hye-Won;Bae, Hyun-Sook;Kim, Jie-Kwan
    • Journal of Fashion Business
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    • v.15 no.2
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    • pp.145-159
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    • 2011
  • The study aimed to analyze the status quo of manufacturing work environment and the work clothes' clothing comfort and wearer mobility of welding and grinding work processes in the machine and shipbuilding industries in South Korea. A questionnaire survey was conducted for the study, which consisted of questions about work clothes' clothing comfort and wearer mobility according to body parts. The findings derived from the research were: the high impact levels of work environment factors on welding and grinding work processes were noise, metal fragment, superheat, toxic gas, UV ray factors. Subject workers' assessment of work clothes' clothing pressures were in the levels between 3 (i.e. moderate) and 4 (i.e. comfortable) in a range of 5-point scale. The impact levels of wearer mobility factor were high on the work processes of welding and grinding in machine and grinding in shipbuilding. While welding process in shipbuilding showed a 'moderate' wearer mobility level and this was because its work postures were uncomfortable yet the rate of the motion change was low. The consideration to develop the work clothes specialized for certain work processes should include the materials' protecting performance from the hazardous work environment factors; and work clothes' designs that provides workers with maximized clothing comfort and wearer mobility for bending or tilting postures of upper, lower and lateral body parts defined in the study.

Studies on Silk Fibroin Membranes(III) ―Permselectivity of Alkali Metal Chlorides through Silk Fibroin Membrane― (Silk Fibroin 막에 관한 연구(III) ―Silk Fibroin 막의 Alkali Metal Ion선택투과성―)

  • Choi, Hae Wook;Sung, Woo Kyung;Park, Soo Min;Kim, Kyung Hwan
    • Textile Coloration and Finishing
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    • v.6 no.4
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    • pp.72-76
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    • 1994
  • The permselectivity of alkali metal chlorides through silk fibroin membrane was investigated at $25^{\circ}C$: The Permeability coefficients were found to increase in a sequence of LiCl < NaCl < KCl < CsCl. This sequence was explained by considering the partition and the hydrophilic membrane. The dependence of the permeability on the salts concentration was interpreted by means of TMS theory. The ionic mobility ratio of alkali metal chlorides through this membrane decreased with the increase of the Stokes radius. The Effectiveness of the charged density was found to depend on the ionic species. The greater the Stokes radius the larger the effective charge density of membrane.

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Solution-processed indium-zinc oxide with carrier-suppressing additives

  • Kim, Dong Lim;Jeong, Woong Hee;Kim, Gun Hee;Kim, Hyun Jae
    • Journal of Information Display
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    • v.13 no.3
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    • pp.113-118
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    • 2012
  • Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications

  • Gupta, Ritesh;Aggarwal, Sandeep Kr;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.3
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    • pp.189-198
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    • 2006
  • A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

Graphene for MOS Devices

  • Jo, Byeong-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.67.1-67.1
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    • 2012
  • Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

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Distribution of Cd, Cu and Zn in a Sewage Sludge-treated Calcareous Soil

  • Lee, Sang-Mo;Cho, Chai-Moo;Yoo, Sun-Ho
    • Journal of Applied Biological Chemistry
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    • v.42 no.3
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    • pp.134-139
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    • 1999
  • The distributions of Cd, Cu, and Zn concentration in soil treated with one (1988) or two (1988 and 1993) applications of sewage sludge at rates of 0, 25, 50, and $100Mg\;ha^{-1}$ (dry weight basis) were determined to assess the accumulation and mobility of the heavy metals. The heavy metals accumulated almost entirely in 0 to 15 cm soil depths. Small amounts of the metals moved out of the tillage zone (0-15 cm depth) into the subsoil, but even at the high rate of sewage sludge, little movement of heavy metals occurred below 100 cm depth. The water-extractable Cd, Cu, and Zn concentrations were very low regardless of the rate of sewage sludge application. Availability of metals as determined by DTPA extraction showed the percentage of DTPA-extractable/total concentration increased with sewage sludge application. In the 0-15 cm depth of sewage sludge treated soil, the percentage of DTPA-extractable/total concentration was higher than 46% for Cd, but the value was less than 27% and 17% for Cu and Zn, respectively. The Cd, Cu, and Zn added to this calcareous clay soil by sewage sludge application were not very mobile, and the amount of plant available form was very small.

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Accumulation of Cd, Co, Cr, Cu, Mn, Ni, Pb and Zn in urban soil and their mobility characteristics

  • Bhattacharyya, Krishna G.;Mahanta, Mayur J.
    • Advances in environmental research
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    • v.3 no.4
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    • pp.321-335
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    • 2014
  • Eight trace metals, Cd, Co, Cr, Cu, Mn, Ni, Pb and Zn, were measured in the urban soil of Guwahati City, Assam, India from 31 sites representing five different types of land use, residential, commercial, industrial, public utilities, and roadside. Cd and Co occurred in very low concentrations (Cd << Co) in all types of land use without any significant variation from one type of land use to another. Ni concentrations were more than those of Co, and the concentrations depended on land use pattern. Average Cr and Cu concentrations were ${\geq}100mg/kg$, but Cr had a significantly higher presence in industrial land use. Pb concentrations showed similar trends. The two metals, Mn and Zn, were present in much larger amounts compared to the others with values ${\geq}300mg/kg$. Industrial and roadside soil contained much more Mn while commercial soil was enriched with Zn. Toxicity Characteristic Leaching Procedure (TCLP) was used for elucidating the mobility characteristics of the eight heavy metals. Mn suffered the highest leaching from commercial land (9.9 mg/kg on average) and also from other types of land. Co, Cu and Pb showed higher leachability from commercial soils but the leached concentrations were less than those of Mn. The two metals, Zn and Ni, were leached from residential land in considerable amounts. The TCLP showed Mn to be the most leachable metal and Cr the least.