• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.43-48
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• 2023

This paper discusses the design of 32Mbyte asynchronous nonvolatile memory modules, which includes self-diagnosis and RTC (Real Time Clock) functions to enhance their data stability and reliability. Nonvolatile memory modules can maintain data even in a power-off state, thereby improving the stability and reliability of a system or device. However, due to the possibility of data error due to electrical or physical reasons, additional data loss prevention methods are required. To minimize data error in asynchronous nonvolatile memory modules, this paper proposes the use of voltage monitoring circuits, self-diagnosis, BBT (Bad Block Table), ECC (Error Correction Code), CRC (Cyclic Redundancy Check)32, and data check sum, data recording method using RTC. Prototypes have been produced to confirm correct operation and suggest the possibility of commercialization.

• ETRI Journal
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• v.36 no.5
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• pp.876-879
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• 2014

In current NAND flash design, one of the most challenging issues is reducing peak current consumption (peak ICC), as it leads to peak power drop, which can cause malfunctions in NAND flash memory. This paper presents an efficient approach for reducing the peak ICC of the cache program in NAND flash memory - namely, a program Cache Busy Time (tPCBSY) control method. The proposed tPCBSY control method is based on the interesting observation that the array program current (ICC2) is mainly decided by the bit-line bias condition. In the proposed approach, when peak ICC2 becomes larger than a threshold value, which is determined by a cache loop number, cache data cannot be loaded to the cache buffer (CB). On the other hand, when peak ICC2 is smaller than the threshold level, cache data can be loaded to the CB. As a result, the peak ICC of the cache program is reduced by 32% at the least significant bit page and by 15% at the most significant bit page. In addition, the program throughput reaches 20 MB/s in multiplane cache program operation, without restrictions caused by a drop in peak power due to cache program operations in a solid-state drive.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.291-302
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• 2013

NAND flash memory (NFM) based storage devices, e.g. Solid State Drive (SSD), are rapidly replacing conventional storage devices, e.g. Hard Disk Drive (HDD). As NAND flash memory technology advances, its specification has evolved to support denser cells and larger pages and blocks. However, efforts to fully understand their impacts on design objectives such as performance, power, and cost for various applications are often neglected. Our research shows this recent trend can adversely affect the design objectives depending on the characteristics of applications. Past works mostly focused on improving the specific design objectives of NFM based systems via various architectural solutions when the specification of NFM is given. Several other works attempted to model and characterize NFM but did not access the system-level impacts of individual parameters. To the best of our knowledge, this paper is the first work that considers the specification of NFM as the design parameters of NAND flash storage devices (NFSDs) and analyzes the characteristics of various synthesized and real traces and their interaction with design parameters. Our research shows that optimizing design parameters depends heavily on the characteristics of applications. The main contribution of this research is to understand the effects of low-level specifications of NFM, e.g. cell type, page size, and block size, on system-level metrics such as performance, cost, and power consumption in various applications with different characteristics, e.g. request length, update ratios, read-and-modify ratios. Experimental results show that the optimized page and block size can achieve up to 15 times better performance than the conventional NFM configuration in various applications. The results can be used to optimize the system-level objectives of a system with specific applications, e.g. embedded systems with NFM chips, or predict the future direction of NFM.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.2
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• pp.178-184
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• 2004

In this paper, we designed an image processing system for the high speed line-scan camera which adopts the new memory model we proposed. As a resolution and a data rate of the line-scan camera are becoming higher, the faster image processing systems are needed. But many conventional systems are not sufficient to process the image data from the line-scan camera during a very short time. We designed the memory controller which eliminates the time for transferring image data from the line-scan camera to the main memory with high-speed SRAM and has a dual-port configuration therefore the DSP can access the main memory even though the memory controller are writing the image data. The memory controller is implemented by VHDL and Xilinx SPARTAN-IIE FPGA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.473-482
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• 2017

Hand gesture recognition is regarded as new Human Computer Interaction (HCI) technologies for the next generation of mobile devices. Previous hand gesture implementation requires a large memory and computation power for hand segmentation, which fails to give real-time interaction with mobile devices to users. Therefore, in this paper, we presents a low latency and memory-efficient hand segmentation architecture for natural hand gesture recognition. To obtain both high memory-efficiency and low latency, we propose a streaming hand contour tracing unit and a fast contour filling unit. As a result, it achieves 7.14 ms latency with only 34.8 KB on-chip memory, which are 1.65 times less latency and 1.68 times less on-chip memory, respectively, compare to the best-in-class.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.73-79
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• 2009

With the advance of VLSI technology, the capacity and density of memories are rapidly growing. In this paper we proposed MRI (Memory built-in self Repair Imagination zone) as reallocation algorithm. All faulty cells of embedded memory are reallocated into the row and column spare memory. This work implements reallocation algorithm and BISR to verify its design.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.5
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• pp.462-468
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• 2009

In this study, a workpiece-chucking device that generates a chucking force from a shape memory alloy is introduced. This paper first presents train procedure to transform a commercial one-way shape memory alloy into a two-way shape memory alloy, which makes unclamping mechanism of the chucking device simpler than that using the one-way shape memory alloy Second, it describes a conceptual design of the workpiece-chucking device using the two-way type shape memory alloy. Third, it presents a prototype and its chucking characteristics, such as time-response of clamping/unclamping operations and a relationship between temperatures and chucking forces. Finally, it describes a mill-machining test conducted with the prototype. The results confirm that the proposed workpiece-chucking device is feasible for micro machine-tools.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.2
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• pp.87-92
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• 2001

This paper proposes a new content-addressable memory implemented with an analog array which has linear writing and erasing characteristics. The size of the array in this memory is $2{\times}2$, which is a reasonable structure for checking the disturbance of the unselected cells during programming. An intermediate voltage, Vmid, is used for preventing the interference during programming. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We simulate the function of the mechanism by means of Hspice with 1.2${\mu}m$ double poly CMOS parameters of MOSIS fabrication process.

• Korean Institute of Interior Design Journal
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• v.18 no.5
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• pp.12-20
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• 2009

Memory and schema are very similar in terms of human accumulated mental and physical experiences. However, while memory has more personal aspect, schema discussed in this paper has more collective aspect. Schema has been developed through different generations and times, and has become a specific psychological or visual element(s) that can be applied to various fields, such as all, design and architecture. This study focuses on Aldo Rossi's architectural design characteristics based on his 'Autobiographical Concept' as well as personal schema. 'Autobiographical Concept' is the crucial structure supporting Aldo Rossi's distinctive formalization and spatialization. 4 case projects were comparatively analyzed by the 5 elements included in 'Autobiographical Concept'. It was not easy to relate each element to a specific design aspect because the 5 elements are somehow theoretically and conceptually inter-connected each other. Even though it is very difficult to directly relate a conceptual element with a real spatial element, it is found that the 5 elements have some differences in the spatialization process. Thus, in the conclusion, this study attempted to show the unique characteristics of the Aldo Rossi's architectural design process based on his 'Autobiographical Concept'.

• Proceedings of the Korea Society of Design Studies Conference
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• 2002.05b
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• pp.222-223
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• 2002