• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 추계학술대회(한국공작기계학회)
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• pp.75-79
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• 2001

In the recent years, as the research and the development of micro and precision machinery become active, the interest of micro actuators using SMA(Shape Memory Alloy) has been increased. The dynamic characteristic analysis of SMA is necessary for actuator application and many common researches report the material characteristics of SMA sufficiently. However, the research on dynamic characteristics is very deficient. In this paper, the helical spring are fabricated with NiTi SMA wire of high resistivity, The force, response speed, temperature, and displacement are measured by digital force gauge, infrared thermometer, and laser displacement sensor so that the dynamic characteristics of this SMA is analyzed. Also, bidirectional actuator was fabricated and experimented for its performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• 전자통신동향분석
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• 제35권3호
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• pp.55-65
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• 2020

With the development of nonvolatile memory technology, Intel has released the Optane datacenter persistent memory module (DCPMM) that can be deployed in the dual in-line memory module. The results of research and experiments on Optane DCPMMs are significantly different from the anticipated results in previous studies through emulation. The DCPMM can be used in two different modes, namely, memory mode (similar to volatile DRAM: Dynamic Random Access Memory) and app direct mode (similar to file storage). It has buffers in 256-byte granularity; this is four times the CPU (Central Processing Unit) cache line (i.e., 64 bytes). However, these properties are not easy to use correctly, and the incorrect use of these properties may result in performance degradation. Optane has the same characteristics of DRAM and storage devices. To take advantage of the performance characteristics of this device, operating systems and applications require new approaches. However, this change in computing environments will require a significant number of researches in the future.

• 생물정신의학
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• 제4권1호
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• pp.3-11
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• 1997

Disturbances in memory are the most common problem in patients with an organic mental syndrome. Other patients with significant psychiatric disorders also often have difficulty with memory. So it is very important in the clinical practice of psychiatry to understand the biological and neurocognitive mechanisms of memory proessing, and to develop the assessment tools with which memory function can be evaluated reliably and validly. Moreover, memory researches provide an important viewpoint from which we can understand the pathophysiological mechanisms of major neuropsychiatric illnesses. This article focuses on our understanding of memory functions in clinical and neurobiological aspects. The relevant material will be presented in four parts : 1) terminologies needed in defining major stages of various types of memory processing : 2) neurochemical and neuroanatomical basis of memory processing : 3) brief bed-side screening tests and more comprehensive neuropsychological tests for the evaluation of memory function : 4) the characteristics of memory dysfunction in several major psychiatric illnesses.

• 대한임베디드공학회논문지
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• 제13권3호
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.408-409
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• 2009

The memory characteristics of charge trap memory capacitor with high-k materials were investigated. I-V characteristics of the fabricated device with band gap engineered tunneling gate stacks consisted of $SiO_2$, $ZrO_2$, $Al_2O_3$ dielectrics were evaluated and compared with the one consisted of $SiO_2$ tunneling dielectric. The memory capacitor including engineered tunneling dielectrics of ($Al_2O_3/ZrO_2/SiO_2$) shows the fastest PIE speed and long data retention time.

• 한국정밀공학회지
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• 제19권10호
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• pp.52-59
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• 2002

The thermo-mechanical characteristics of high temperature NITINOL shape memory alloy were evaluated using DSC with small samples and DMA with three-point bending specimens. The shape memory alloy of 54.4Ni/45.5Ti wt.% was used so that the phase transformation temperatures were in the range of 50~11$0^{\circ}C$. Two types of sample were tested in the experiments corresponding to as-received and annealed conditions. Simple beam bending theory was used to calculate the dynamic moduli of the shape memory alloy. According to the results, a large discrepancy in transformation temperatures was found between DSC and DMA techniques. Annealing treatment was found to suppress the R-phase transformation during cooling and the secondary plateau in the austenite transformation. Such a heat treatment was also significantly influenced to raise the transformation temperatures and the moduli of the shape memory alloy.

• 한국인터넷방송통신학회논문지
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• 제23권1호
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• pp.71-76
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• 2023

최근 메모리 관리의 효율성을 높이기 위해 읽기 참조와 쓰기 참조의 기록을 별도로 활용하는 전략이 주목받고 있다. 이는 읽기/쓰기 시간이 비대칭적인 저장 매체의 출현과 읽기/쓰기 참조의 소프트웨어적 특성이 상이한 점을 반영하기 위해 필요한 전략이다. 한편, 기존의 연구들은 메모리 페이지에 읽기와 쓰기 중 어떤 참조가 발생했는지 운영체제가 구분할 수 있다는 가정을 하고 있으나, 대부분의 메모리 아키텍처는 이들을 구분할 수 있는 방안을 지원하지 않는다. 본 논문에서는 기존 연구와 달리 소프트웨어적인 방법으로 메모리 페이지에 발생하는 읽기 쓰기 참조의 특성을 반영하는 방법을 제안한다. 제안하는 방법은 참조 비트와 수정 비트를 이용해 각 페이지의 읽기 및 쓰기 기록을 추정하며, 시뮬레이션을 통해 하드웨어적인 지원이 있는 기존 연구와 거의 유사한 효과가 있음을 보인다.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.