• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• ETRI Journal
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• v.36 no.6
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• pp.988-998
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• 2014

For memory-based big data storage, using hybrid memories consisting of both dynamic random-access memory (DRAM) and non-volatile random-access memories (NVRAMs) is a promising approach. DRAM supports low access time but consumes much energy, whereas NVRAMs have high access time but do not need energy to retain data. In this paper, we propose a new data migration method that can dynamically move data pages into the most appropriate memories to exploit their strengths and alleviate their weaknesses. We predict the access frequency values of the data pages and then measure comprehensively the gains and costs of each placement choice based on these predicted values. Next, we compute the potential benefits of all choices for each candidate page to make page migration decisions. Extensive experiments show that our method improves over the existing ones the access response time by as much as a factor of four, with similar rates of energy consumption.

• ETRI Journal
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• v.34 no.3
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• pp.388-398
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• 2012

Three-dimensional (3D) memories using through-silicon vias (TSVs) will likely be the first commercial applications of 3D integrated circuit technology. A 3D memory yield can be enhanced by vertical redundancy sharing strategies. The methods used to select memory dies to form 3D memories have a great effect on the 3D memory yield. Since previous die-selection methods share redundancies only between neighboring memory dies, the opportunity to achieve significant yield enhancement is limited. In this paper, a novel die-selection method is proposed for multilayer 3D memories that shares redundancies among all of the memory dies by using additional TSVs. The proposed method uses three selection conditions to form a good multi-layer 3D memory. Furthermore, the proposed method considers memory fault characteristics, newly detected faults after bonding, and multiple memory blocks in each memory die. Simulation results show that the proposed method can significantly improve the multilayer 3D memory yield in a variety of situations. The TSV overhead for the proposed method is almost the same as that for the previous methods.

• Journal of Digital Contents Society
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• v.8 no.4
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• pp.593-600
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• 2007

Small computer systems such as mobile devices adopt NAND flash memories as their storage media. However, DBMS running on such systems are optimized to hard disks. When small computer systems use DBMS they usually use additional system layer, like FTL, that emulates flash memories as normal hard disks and DBMS cannot control flash memories directly. In this paper, we propose unified storage system that DBMS controls flash memories directly. We implemented the system in a real environment and proved the proposed system outperforms legacy systems.

• Cross-Cultural Studies
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• v.46
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• pp.199-225
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• 2017

Death and the Maiden(1990), by the Chilean playwright Ariel Dorfman, directly addresses the issue of liquidating the past that the transient democratic government of Patricio Aylwin faced, the government established right after the end of the dictatorship of Augusto Pinochet. This article focuses on analyzing the aspects of conflicts and discords between memories of individuals as reflected in the conversations between characters of the play. For example. we look into the effects of traumatic memories of Paulina, tortured and raped by the past government, on her everyday life and examine the relationship between her personal memory and the collective memory. We also look into the discourse of the dominating memory through the confession of the rapist doctor Roberto, and observe how Gerardo, a lawyer appointed as a member of the investigation committee, exposes the truth of the case and mediates the conflict of the memories between the two characters. We uncover the problems inherent in the state memory as it tries to intervene in the strife in memories between assailants and victims and explore the possibility that the concept of memory deterritorialization would be an alternative to overcome these problems.

• Journal of Internet of Things and Convergence
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• v.9 no.1
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• pp.19-24
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• 2023

Recently, with the recent rapid development of memory technology, various types of memory are developed and are used to improve processing speed in data management systems. In particular, NAND flash memory is used as a main media for storing data in memory-based storage devices because it has a nonvolatile characteristic that it can maintain data even at the power off state. However, since the recently studied memory-based storage device consists of various types of memory such as MRAM and PRAM as well as NAND flash memory, research on memory management technology is needed to improve data processing performance and efficiency of media in a storage system composed of different types of memories. In this paper, we propose a memory mapping scheme thought technique for efficiently managing data in the storage device composed of various memories for data management. The proposed idea is a method of managing different memories using a single mapping table. This method can unify the address scheme of data and reduce the search cost of data stored in different memories for data tiering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.151-154
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• 2004

Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.32B no.6
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• pp.849-861
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• 1995

In this paper, a new trace driven simulation algorithm is proposed to evaluate the bus traffic and the miss ration of the various sector cache memories, which have various sub-block sizes and block sizes and associativities and number of sets, with a single pass through an address trace. Trace-driven simulaton is usually used as a method for performance evaluation of sector cache memories, but it spends a lot of simulation time for simulating the diverse cache configurations with a long address trace. The proposed algorithm shortens the simulation time by evaluating the performance of the various sector cache configurations. which have various sub-block sizes and block sizes and associativities and number of sets , with a single pass through an address trace. Our simulation results show that the run times of the proposed simulation algorithm can be considerably reduced than those of existing simulation algorithms, when the proposed algorithm is miplemented in C language and the address traces obtained from the various sample programs are used as a input of trace-driven simulation.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.273-276
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• 2004

Report ferroelectric memories based on 0.35$\mu\textrm{m}$ CMOS technology ensuring ten-year retention and imprint at 175$^{\circ}C$. This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments.