[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4191/KCERS.2004.41.4.273

Nonvolatile Semiconductor Memories Using BT-Based Ferroelectric Films

Yang, Bee-Lyong (Kumoh National Institute of Technology, Department of Materials Science and Engineering)
Hong, Suk-Kyoung (Memory R ＆ D Division, FeRAM Device Team, Hynix Semiconductor)

Publication Information

Journal of the Korean Ceramic Society / v.41, no.4, 2004 , pp. 273-276 More about this Journal

Abstract

Report ferroelectric memories based on 0.35 $\mu\textrm{m}$ CMOS technology ensuring ten-year retention and imprint at 175 $^{\circ}C$ . This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments.

Keywords

Ferroelectric; BT; Memory; Orientation; Reliability;

Citations & Related Records

Reference

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