• Title/Summary/Keyword: mean surface roughness

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Effects of thermal annealing of AlN thin films deposited on polycrystalline 3C-SiC buffer layer (다결정 3C-SiC 버퍼층위 증착된 AlN 박막의 열처리 효과)

  • Hong, Hoang-Si;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.112-112
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    • 2009
  • In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

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Chemical Vapor Deposition of Ga2O3 Thin Films on Si Substrates

  • Kim, Doo-Hyun;Yoo, Seung-Ho;Chung, Taek-Mo;An, Ki-Seok;Yoo, Hee-Soo;Kim, Yun-Soo
    • Bulletin of the Korean Chemical Society
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    • v.23 no.2
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    • pp.225-228
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    • 2002
  • Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

Influence of Dose on the Property of Cobalt Silicides in Source/Drain Area (소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화)

  • Cheong, Seong-Hwee;Song, Oh-Sung;Kim, Min-Sung
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.43-47
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    • 2003
  • As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{+}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{+}$ , while little variation was observed in $CoSi_2$$p^{+}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{+}$ / and $CoSi_2$/$p^{+}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

The Study of Steering Effect in Multilayer Growth (두꺼운 박막 성장시 Steering 효과 연구)

  • Seo J.;Kim J.S.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.410-420
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    • 2006
  • The dynamic effects, such as the steering and the screening effects during deposition on an epitaxial growth is studied by kinetic Monte Carlo simulation. In the simulation, we incorporates molecular dynamic simulation to rigorously take the interaction of the deposited atom with the substrate atoms into account, We find three characteristic features of the surface morphology developed by grazing angle deposition: (1) enhanced surface roughness, (2) asymmetric mound, and (3) asymmetric slopes of mound sides, Regarding their dependence on both deposition angle and substrate temperature, a reasonable agreement of the simulated results with the previous experimental ones is found. The characteristic growth features by grazing angle deposition are mainly caused by the inhomogeneous deposition flux due to the steering and screening effects, where the steering effects play the major role rather than the screening effects. Newly observed in the present simulation is that the side of mound in each direction is composed of various facets instead of all being in one selected mound angle even if the slope selection is attained, and that the slope selection does not necessarily mean the facet selection.

Fabrication of cube textured Au/Ni template using electoless-plating (무전해 도금법을 이용한 cube 집합조직을 가지는 Au/Ni template 제조)

  • Lim Jun Hyung;Kim Jung Ho;Jang Seok Hem;Kim Kyu Tae;Lee Jin Sung;Yoon Kyung Min;Joo Jinho;Kim Chan-Joong;Ha Hong-Soo;Park Chan
    • Progress in Superconductivity
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    • v.6 no.2
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    • pp.133-137
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    • 2005
  • We fabricated the Au/Ni template for YBCO coated conductors and evaluated texture formation and the microstructural evolution. The cube textured Ni substrate was fabricated by rolling and recrystallization annealing, and subsequently Au layer formed on the substrate by electroless-plating method. The texture was evaluated by pole-figure with x-ray goniometer with orientation distribution function (ODF) analysis. The surface roughness and grain boundary morphology of template were characterized by atomic force microscopy (AFM) We observed that Au layer deposited epitaxially on Ni substrate and formed a strong cube texture when plating time was optimized. The full-width at half-maximum (FWHM) was $8.4^{\circ}$ for out-of-plane and $9.98^{\circ}$ for in-plane texture for plating time of 30 min. Microstructural observation showed that the Au layer was homogeneous and dense without formation of crack/microcrack. In addition, we observed that root-mean-square (RMS) and depth of grain boundary were 14.6 nm and 160 $\AA$ for the Au layer, respectively, while those were 27.0 nm and 800 $\AA$ for the Ni substrate, indicating that the electoless-plated Au layer had relatively smooth surface and effectively mollified grain groove.

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Surface Morphology Study of Al,$\textrm{Ga}_{1-}$,N grown by Plasma Induced Molecular Beam Epitaxy (분자선증착법으로 성장된 AlGaN 에피층의 표면 형상 분석)

  • Kim, Je-Won;Choe, In-Hun;Park, Yeong-Gyun;Kim, Yong-Tae
    • Korean Journal of Materials Research
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    • v.9 no.9
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    • pp.878-882
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    • 1999
  • Structural properties of $Al_xGa_1-_xN$ epilayers grown on (0001) sapphire substrate by plasma induced molecular beam epitaxy are investigated in the range of AlN molar fraction from 0.16 to 0.76. The AlN molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron microscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlGaN epilayers on AlN molar fraction imply that the epitaxial growth of $Al_xGa_1-_xN$ layers with variation of AlN molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of $Al_xGa_1-_xN$ epilayer changes from roundish to coalesced one with increasing AlN molar fraction.

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Properties of TiO2 Thin Films Deposited on PET Substrate for High Energy Density Capacitor (고에너지밀도 캐패시터를 위해 PET 기판에 증착한 TiO2 박막의 특성)

  • Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.22 no.8
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    • pp.409-415
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    • 2012
  • $TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

Development and validation of a non-linear k-ε model for flow over a full-scale building

  • Wright, N.G.;Easom, G.J.;Hoxey, R.J.
    • Wind and Structures
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    • v.4 no.3
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    • pp.177-196
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    • 2001
  • At present the most popular turbulence models used for engineering solutions to flow problems are the $k-{\varepsilon}$ and Reynolds stress models. The shortcoming of these models based on the isotropic eddy viscosity concept and Reynolds averaging in flow fields of the type found in the field of Wind Engineering are well documented. In view of these shortcomings this paper presents the implementation of a non-linear model and its evaluation for flow around a building. Tests were undertaken using the classical bluff body shape, a surface mounted cube, with orientations both normal and skewed at $45^{\circ}$ to the incident wind. Full-scale investigations have been undertaken at the Silsoe Research Institute with a 6 m surface mounted cube and a fetch of roughness height equal to 0.01 m. All tests were originally undertaken for a number of turbulence models including the standard, RNG and MMK $k-{\varepsilon}$ models and the differential stress model. The sensitivity of the CFD results to a number of solver parameters was tested. The accuracy of the turbulence model used was deduced by comparison to the full-scale predicted roof and wake recirculation zone lengths. Mean values of the predicted pressure coefficients were used to further validate the turbulence models. Preliminary comparisons have also been made with available published experimental and large eddy simulation data. Initial investigations suggested that a suitable turbulence model should be able to model the anisotropy of turbulent flow such as the Reynolds stress model whilst maintaining the ease of use and computational stability of the two equations models. Therefore development work concentrated on non-linear quadratic and cubic expansions of the Boussinesq eddy viscosity assumption. Comparisons of these with models based on an isotropic assumption are presented along with comparisons with measured data.

Model Optimization for Sea Surface Wind Simulation of Strong Wind Cases (강풍 사례의 해상풍 모의를 위한 모형의 최적화)

  • Heo, Ki-Young;Lee, Jeong-Wook;Ha, Kyung-Ja;Jun, Ki-Cheon;Park, Kwang-Soon
    • Journal of the Korean earth science society
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    • v.29 no.3
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    • pp.263-279
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    • 2008
  • This study is concerned with the optimization of models using MM5 and WRF mesoscale numerical models to simulate strong sea surface winds, such as that of typhoon Shanshan on 17 September 2006, and the Siberian high event on 16 December 2006, which were selected for displaying the two highest mean wind speeds. The model optimizations for the lowest level altitude, physical parameters and horizontal resolution were all examined. The sea surface wind values obtained using a logarithmic function which takes into account low-level stability and surface roughness were more accurate than those obtained by adjusting the lowest-level of the model to 10 m linearly. To find the optimal parameters for simulating strong sea surface winds various physical parameters were combined and applied to the model. Model grid resolutions of 3-km produced better results than those of 9-km in terms of displaying accurately regions of strong wind, low pressure intensities and low pressure mesoscale structures.

Converting Ieodo Ocean Research Station Wind Speed Observations to Reference Height Data for Real-Time Operational Use (이어도 해양과학기지 풍속 자료의 실시간 운용을 위한 기준 고도 변환 과정)

  • BYUN, DO-SEONG;KIM, HYOWON;LEE, JOOYOUNG;LEE, EUNIL;PARK, KYUNG-AE;WOO, HYE-JIN
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.23 no.4
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    • pp.153-178
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    • 2018
  • Most operational uses of wind speed data require measurements at, or estimates generated for, the reference height of 10 m above mean sea level (AMSL). On the Ieodo Ocean Research Station (IORS), wind speed is measured by instruments installed on the lighthouse tower of the roof deck at 42.3 m AMSL. This preliminary study indicates how these data can best be converted into synthetic 10 m wind speed data for operational uses via the Korea Hydrographic and Oceanographic Agency (KHOA) website. We tested three well-known conventional empirical neutral wind profile formulas (a power law (PL); a drag coefficient based logarithmic law (DCLL); and a roughness height based logarithmic law (RHLL)), and compared their results to those generated using a well-known, highly tested and validated logarithmic model (LMS) with a stability function (${\psi}_{\nu}$), to assess the potential use of each method for accurately synthesizing reference level wind speeds. From these experiments, we conclude that the reliable LMS technique and the RHLL technique are both useful for generating reference wind speed data from IORS observations, since these methods produced very similar results: comparisons between the RHLL and the LMS results showed relatively small bias values ($-0.001m\;s^{-1}$) and Root Mean Square Deviations (RMSD, $0.122m\;s^{-1}$). We also compared the synthetic wind speed data generated using each of the four neutral wind profile formulas under examination with Advanced SCATterometer (ASCAT) data. Comparisons revealed that the 'LMS without ${\psi}_{\nu}^{\prime}$ produced the best results, with only $0.191m\;s^{-1}$ of bias and $1.111m\;s^{-1}$ of RMSD. As well as comparing these four different approaches, we also explored potential refinements that could be applied within or through each approach. Firstly, we tested the effect of tidal variations in sea level height on wind speed calculations, through comparison of results generated with and without the adjustment of sea level heights for tidal effects. Tidal adjustment of the sea levels used in reference wind speed calculations resulted in remarkably small bias (<$0.0001m\;s^{-1}$) and RMSD (<$0.012m\;s^{-1}$) values when compared to calculations performed without adjustment, indicating that this tidal effect can be ignored for the purposes of IORS reference wind speed estimates. We also estimated surface roughness heights ($z_0$) based on RHLL and LMS calculations in order to explore the best parameterization of this factor, with results leading to our recommendation of a new $z_0$ parameterization derived from observed wind speed data. Lastly, we suggest the necessity of including a suitable, experimentally derived, surface drag coefficient and $z_0$ formulas within conventional wind profile formulas for situations characterized by strong wind (${\geq}33m\;s^{-1}$) conditions, since without this inclusion the wind adjustment approaches used in this study are only optimal for wind speeds ${\leq}25m\;s^{-1}$.