• Journal of Mechanical Science and Technology
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• v.17 no.2
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• pp.269-279
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• 2003

The anti-plane shear problem of bonded elastic materials containing a crack at an arbitrary angle to the graded interfacial zone is investigated in this paper The interfacial zone is modeled as a nonhomogeneous interlayer of finite thickness with the continuously varying shear modulus between the two dissimilar, homogeneous half-planes. Formulation of the crack problem is based upon the use of the Fourier integral transform method and the coordinate transformations of basic field variables. The resulting Cauchy-type singular integral equation is solved numerically to provide the values of mode 111 stress intensity factors. A comprehensive parametric study is then presented of the influence of crack obliquity on the stress intensity factors for different crack size and locations and for different material combinations, in conjunction with the material nonhomogeneity within the graded interfacial zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.252-255
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• 2003

The pulsed laser deposition process modeling is investigated using neural networks based on radial basis function networks and multi-layer perceptron. Two input factors are examined with respect to the PL intensity. In order to minimize the joint confidence region of fabrication process with varying the conditions, D-optimal experimental design technique is performed and photoluminescence intensity is characterized by neural networks. The statistical results were then used to verify the fitness of the nonlinear process model. Based on the results, this modeling methodology can be optimized process conditions for pulsed laser deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2001.05a
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• pp.64-76
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• 2001

In this paper, A simple image hologram encryption and decryption technique based on the principle of interference are proposed. The technique using the photorefractive material for getting a stable interference pattern is also proposed. And combine these two techniques, I would like to implement a stable optical information security system. In the encrypting process, I would generate binary phase hologram which can reconstruct original image perfectly, and regard this hologram as original image to be encrypted image. And then the hologram is encrypted as randomly generated binary phase image. Reference image is also generated from the encrypted image by applying interference rule. In the decrypting process, I can get a interference intensity by interfering the reference image and the encrypted image in the interferometer. and transform inferference intensity information into phase information. I recover original image by inverse Fourier transforming the phase information. In this process, the intensity information generated by interference of two images is very sensitive to external vibrations. So, I would like to get a stable interference using the characteristic of SPPCM(self pumped phase conjugate mirror) in photorefractive materials, especially BaTiO₃.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.50-51
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• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.647-653
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• 2011

In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.8 s.179
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• pp.2007-2014
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• 2000

It has been reported that the dynamic stress intensity factor for a propagating crack is increasing or decreasing according to the increasement of the crack propagating velocity. It is confirmed in this study that the increasement or decreasement of stress intensity factor with crack growing velocity is accused by loading condition. When the crack propagates under a constant displacement along upper and lower boundary in finite plate, the dynamic stress intensity factor decreases according to the increasement of the propagating crack velocity. When the crack propagates under a constant stress along upper and lower boundary in finite plate, the dynamic stress intensity factor increases according to the increasement of the propagating crack velocity. The increasement or decreasement of stress intensity factor with crack growing velocity is greater in a fast crack propagation velocity than in a slow one.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.9 s.180
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• pp.2220-2227
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• 2000

In this paper, dynamic photoelastic hybrid method is developed and its validity is certified. The dynamic photoelastic hybrid method can be used on the obtaining of dynamic stress intensity factors and dynamic stress components. The effect of crack length on the dynamic stress intensity factors is less than those on the static stress intensity factors. When structures are under the dynamic mixed mode load, dynamic stress intensity factor of mode I is almost produced. Dynamic loading device manufactured in this research can be used on the research of dynamic behavior when mechanical resonance is produced and when crack is propagated with the constant velocity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.579-580
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• 2008