UV and visible emission intensity control of ZnO thin films for light emitting device applications

발광소자 응용을 위한 ZnO 박막의 자외선 및 가시광 발광 세기 제어

  • 강홍성 (연세대학교 전기전자공학과) ;
  • 심은섭 (연세대학교 전기전자공학과) ;
  • 강정석 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2001.11.08

Abstract

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

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