• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1997년도 추계학술대회논문집
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• pp.102-109
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• 1997

The surface deformation of shadow mask was studied by the experiments and numerical analysis for process improvement and delet of the stabilizing process in the shadow mask manufaturing line. To inverigate the thermal deformation of shadow mask with and without stabilizing process mask, data of spring strength, frame flatness, frame magnetic force and a mask surface curvature were measured. The tube characteristics of two kind of shadow masks were also investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.851-854
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• 2008

In order to reduce the manufacturing cost of TFT LCDs and cut down an amount facilities invested, there are many LCD panel makers contributes to convert the current Five-mask manufacturing process into the noble Four-mask fabrication process. We optimized the slit mask to improve the poor process reliability.

• 동굴
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• 제77호
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• pp.21-30
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• 2007

Photo-lithography lies in the middle of the wafer fabrication process. It is often considered as the most critical step in the IC process. We use a mask in exposure steps of the photo-lithography. Typically, 20 to 25 different levels of masks are required to complete an IC device. That means, if a photo process can be developed with the use of only one photo mask, we can reduce more process cost. To satisfy this, we plan to develop an alternative photo mask. For this reason, we chose to use a LCD. We expect to develop a LCD panel that can be changed by electrical control. This is the main idea about the adjustive photo mask. The Photo mask made of LCD panel will replace the former one.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• 한국정밀공학회지
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• 제25권1호
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• pp.138-144
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• 2008

Micro-machining of a brittle material such as glass, silicon, etc., is important in micro fabrication. Particularly, micro-abrasive jet machining (${\mu}-AJM$) has become a useful technique for micro-machining of such materials. The ${\mu}-AJM$ process is mainly based on the erosion of a mask which protects brittle substrate against high velocity of micro-particle. Therefore, fabrication of an adequate mask is very important. Generally, for the fabrication of a mask in the ${\mu}-AJM$ process, a photomask based on the semi-conductor fabrication process was used. In this research a rapid mask fabrication technology has been developed for the ${\mu}-AJM$. By scanning the focused UV laser beam, a micro-mask pattern was fabricated directly without photolithography process and photomask. Two kinds of mask patterns were fabricated using SU-8 and photopolymer (Watershed 11110). Using fabricated mask patterns, abrasive-jet machining of Si wafer were conducted successfully.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• 반도체디스플레이기술학회지
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• 제15권2호
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• 한국기계가공학회지
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• 제10권6호
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• pp.95-101
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• 2011

Micro-abrasive jet machining(${\mu}AJM$) using mask is a fine machining technology which can carve a figure on a material. The mask should have holes exactly same as the required figure. Abrasive particles are jetted into the holes of the mask and it collide with the material. The collision break off small portion of the material. And the ${\mu}AJM$ nozzle should move all over the machining area. However, in general the carving shape is modeled as in a bitmap figure, because it often contains characters. And the mask model is also often modeled from the bitmap image. Therefore, the machining path of the ${\mu}AJM$ also efficient if it can be generated from the bitmap image. This paper suggest an algorithm which can generate ${\mu}AJM$ tool path directly from the bitmap image of the carving figure. And shows some test results and applications.

• 한국산학기술학회논문지
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• 제12권4호
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• pp.1993-1998
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• 2011

반도체 산업은 지속적으로 비약적인 발전을 이루어내면서 점점 고집적회로를 제작하기 위하여 패턴의 미세화가 이루어지게 되었다. 현재 미세 나노패턴의 형성을 위하여 여러층의 하드마스크가 사용되고 있으며, 화학증기증착(CVD)공정을 이용하여 형성한다. 이에 본 연구에서는 스핀공정(spin-on process)이 가능한 유-무기 하이브리드 중합체를 이용한 단일층의 하드마스크를 제작하였는데, 하드마스크 내의 무기계 성분이 감광층 보다 쉽게 식각되는 반면에 하드마스크의 유기계 성분으로 인해 substrate층 보다 덜 식각되었다. 유-무기 하이브리드 중합체를 이용한 하드마스크막의 광학 및 표면 특성을 조사하였고, 감광층과 하드마스크막의 식각비를 비교하여 유-무기소재의 하이브리드중합체에 대한 미세패턴을 형성시킬 수 있는 하드마스크막으로써의 유용성을 확인하였다.