• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.10a
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• pp.102-109
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• 1997

The surface deformation of shadow mask was studied by the experiments and numerical analysis for process improvement and delet of the stabilizing process in the shadow mask manufaturing line. To inverigate the thermal deformation of shadow mask with and without stabilizing process mask, data of spring strength, frame flatness, frame magnetic force and a mask surface curvature were measured. The tube characteristics of two kind of shadow masks were also investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.851-854
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• 2008

In order to reduce the manufacturing cost of TFT LCDs and cut down an amount facilities invested, there are many LCD panel makers contributes to convert the current Five-mask manufacturing process into the noble Four-mask fabrication process. We optimized the slit mask to improve the poor process reliability.

• Journal of the Speleological Society of Korea
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• no.77
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• pp.21-30
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• 2007

Photo-lithography lies in the middle of the wafer fabrication process. It is often considered as the most critical step in the IC process. We use a mask in exposure steps of the photo-lithography. Typically, 20 to 25 different levels of masks are required to complete an IC device. That means, if a photo process can be developed with the use of only one photo mask, we can reduce more process cost. To satisfy this, we plan to develop an alternative photo mask. For this reason, we chose to use a LCD. We expect to develop a LCD panel that can be changed by electrical control. This is the main idea about the adjustive photo mask. The Photo mask made of LCD panel will replace the former one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.1
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• pp.138-144
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• 2008

Micro-machining of a brittle material such as glass, silicon, etc., is important in micro fabrication. Particularly, micro-abrasive jet machining (${\mu}-AJM$) has become a useful technique for micro-machining of such materials. The ${\mu}-AJM$ process is mainly based on the erosion of a mask which protects brittle substrate against high velocity of micro-particle. Therefore, fabrication of an adequate mask is very important. Generally, for the fabrication of a mask in the ${\mu}-AJM$ process, a photomask based on the semi-conductor fabrication process was used. In this research a rapid mask fabrication technology has been developed for the ${\mu}-AJM$. By scanning the focused UV laser beam, a micro-mask pattern was fabricated directly without photolithography process and photomask. Two kinds of mask patterns were fabricated using SU-8 and photopolymer (Watershed 11110). Using fabricated mask patterns, abrasive-jet machining of Si wafer were conducted successfully.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.6
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• pp.95-101
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• 2011

Micro-abrasive jet machining(${\mu}AJM$) using mask is a fine machining technology which can carve a figure on a material. The mask should have holes exactly same as the required figure. Abrasive particles are jetted into the holes of the mask and it collide with the material. The collision break off small portion of the material. And the ${\mu}AJM$ nozzle should move all over the machining area. However, in general the carving shape is modeled as in a bitmap figure, because it often contains characters. And the mask model is also often modeled from the bitmap image. Therefore, the machining path of the ${\mu}AJM$ also efficient if it can be generated from the bitmap image. This paper suggest an algorithm which can generate ${\mu}AJM$ tool path directly from the bitmap image of the carving figure. And shows some test results and applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1993-1998
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• 2011

Semiconductor industry needs to have fine patterns in order to fabricate the high density integrated circuit. For nano-scale patterns, hard-mask is used to multi-layer structure which is formed by CVD (chemical vaporized deposition) process. In this work, we prepared single-layer hard-mask by using organic-inorganic hybrid polymer for spin-on process. The inorganic part of hard-mask was much easier etching than photo resist layer. Beside, the organic part of hard-mask was much harder etching than substrate layer. We characterized the optical and morphological properties to the hard mask films using organic-inorganic hybrid polymer, and then etch rate of photo resist layer and hard-mask film were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful hard-mask film to form the nano-patterns.