• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.3
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• pp.301-310
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• 2017

Quantum-dot cellular automata(QCA) is an alternative technology for implementing various computation, high performance, and low power consumption digital circuits at nano scale. In this paper, we propose a new universal gate in QCA. By using the universal gate, we propose a novel XOR gate which is reduced time/hardware complexity. The universal gate can be used to construct all other basic logic gates. Meanwhile, the proposed universal gate is designed by basic cells and a rotated cell. The rotated cell of the proposed universal gate is located at the central of 3-input majority gate structure. In this paper, we propose an XOR gate using three universal gates, although more than five 3-input majority gates are used to design an XOR gate using the 3-input majority gate. The proposed XOR gate is superior to the conventional XOR gate in terms of the total area and the consumed clock because the number of gates are reduced.

• ETRI Journal
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• v.42 no.6
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• pp.912-921
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• 2020

Quantum-dot cellular automata (QCA) is an alternative complementary metal-oxide-semiconductor (CMOS) technology that is used to implement high-speed logical circuits at the atomic or molecular scale. In this study, an optimal 2-to-4 decoder in QCA is presented. The proposed QCA decoder is designed using a new formulation based on the MV32 gate. Notably, the MV32 gate has three inputs and two outputs, which is equivalent two 3-input majority gates, and operates based on cellular interactions. A multilayer design is suggested for the proposed decoder. Subsequently, a new and efficient 3-to-8 QCA decoder architecture is presented using the proposed 2-to-4 QCA decoder. The simulation results of the QCADesigner 2.0.3 software show that the proposed decoders perform well. Comparisons show that the proposed 2-to-4 QCA decoder is superior to the previously proposed ones in terms of cell count, occupied area, and delay.

• Journal of Advanced Navigation Technology
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• v.20 no.6
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• pp.631-637
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• 2016

Quantum cellular automata (QCA) are one of the alternative technologies that can overcome the limits of complementary metal-oxide-semiconductor (CMOS) scaling. It consists of nano-scale cells and demands very low power consumption. Various circuits on QCA have been researched until these days, and in the middle of the researches, exclusive-OR (XOR) gates are used as error detection and recover. Typical XOR logic gates have a lack of scalable, many clock zones and crossover designs so that they are difficult to implement. In order to overcome these disadvantages, this paper proposes XOR design using majority gate reduced clock zone. The proposed design is compared and analysed to previous designs and is verified the performance.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.10
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• pp.895-903
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• 2017

Quantum Cellular Automata(QCA) is one of the proposed techniques as an alternative solution to the fundamental limitations of CMOS. QCA has recently been extensively studied along with experimental results, and is attracting attention as a nano-scale size and low power consumption. Although the XOR gates proposed in the previous paper can be designed using the minimum area and the number of cells, there is a disadvantage that the number of added cells is increased due to the stability and the accuracy of the result. In this paper, we propose a gate that supplement for the drawbacks of existing XOR gates. The XOR gate of this paper reduces the number of cells by arranging AND gate and OR gate with square structure and propose a half-adder by adding two cells that serve as simple inverters using the proposed XOR gate. Also This paper use QCADesginer for input and result accuracy. Therefore, the proposed half-adder is composed of fewer cells and total area compared to the conventional half-adder, which is effective when used in a large circuit or when a half - adder is needed in a small area.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.9
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.3
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• pp.115-122
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• 1985

In this paper, A decoder for the product of the (7, 4) cyclic code and the (3, 1) cyclic code was designed with less majority gates than other ordinary two-step majority-logic decoder using the same codes, then it was constucted in simple sturucture as a result of the use of a ROM as a mojority gate. It took 42 clock pulses to correct a received word(or 21bits) entirely. And so the decoding time in this decoding was multiplied by a factor of about 0.7 relative to the decoding time in the previous decoding in which two decoders and two-demensional word arrays were used together.

• The Journal of the Convergence on Culture Technology
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• v.7 no.1
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• pp.558-563
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• 2021

Quantum-Dot Cellular Automata is a next-generation nanocircular design technology that is drawing attention from many research organizations not only because it is possible to design efficient circuits by overcoming the physical size limitations of existing CMOS circuits, but also because of its energy-efficient features. In this paper, one of the existing digital circuits, T flip-flop circuit, is proposed using QCA. The previously proposed T flip-flops are designed based on the majority gate, so the circuits are complex and have long delays. Therefore, the design of the XOR gate-based T flip-flop using cell interaction reduces circuit complexity and minimizes latency. The proposed circuit is simulated using QCADesigner, and the performance is compared and analyzed with the existing proposed circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.147-150
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• 2004

Back gate가 있는 $SiO_2$ 기판에 SWCNT(Single Walled Carbon Nanotube) 분산액을 도포하여 SWCNT 네트워크를 형성하였다. 금선을 shadow mask로 사용하여 $10{\mu}m$ 간격의 2단자 금 전극을 열 증착을 통해 형성하였다. 현미경 포토리소그래피를 통하여 시료의 가장자리를 Photoresist로 남겨두어 시료 가장자리의 나노튜브를 통한 단락을 방지하였다. 전류-전압 특성, 게이트 특성과 온도 의존성은 DAQ(Data Aquisition) 보드와 Keithley 2400을 사용하여 측정하였고, Labview 기반 프로그램을 통해 제어하였다. 음의 게이트 전압에서의 저항 감소를 관측함으로써 네트워크 상태에서의 게이트 의존성이 P 형 반도체 성질을 보여줌을 알 수 있었으며, 온도가 올라감에 따라 저항이 지수 함수적으로 증가하는 것으로부터 네트워크의 온도 의존성이 금속성 온도 의존성을 가지는 것을 확인하였다.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.