• Title/Summary/Keyword: magnetron sputter

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Development of Module Type 20kW Plasma Power Supply for Magnetron Sputter (마그네트론 스퍼터용 20kW급 플라즈마 전원장치 개발)

  • Seo, Kwang-Duk;Kim, Sang-Hoon
    • Journal of Industrial Technology
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    • v.27 no.A
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    • pp.157-162
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    • 2007
  • This paper describes a power supply aimed at the production of plasma and its control method for a magnetron sputter in thin film coating process of PVD(Physical Vapor Deposition). Plasma load changes its impedance characteristic easily according to operating conditions and frequently produces electric arc. So. in this paper, a plasma power supply with improved output control performance in the transient state for the plasma load is presented. Also, it includes a strategy that can detect arc rapidly and reduce arc energy effectively into a load. The validity of the proposed power supply through experimentation on 20kW system was proved.

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High Durable Anti-Reflective Polymer with Silica Nanoparticle Array Fabricated by RF Magnetron Sputter (RF sputter를 이용한 실리카 증착 고 내구성 반사 방지막 제조)

  • Jeon, Seong-Gwon;Jeong, Eun-Uk;Rha, Jong-Joo;Kwon, Jung-Dae
    • Journal of the Korean institute of surface engineering
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    • v.52 no.2
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    • pp.84-89
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    • 2019
  • We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

A Study on the ZnO Thin Film SAW Filter by RF Sputter (RF 마그네트론 스퍼터링에 의한 ZnO 박막 SAW 필터에 관한 연구)

  • 박용욱;신형용;박정흠;강종윤;심성훈;최지원;윤석진;김현재;김경환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.481-486
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    • 2001
  • ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

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A Study on the ZnG Thin Film SAW filter by RF Sputter (RF 마그네트론 스퍼터링에 의한 ZnO 박막 SAW 필터에 관한 연구)

  • 박용욱;이동윤;백동수;윤석진;김현재;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.151-154
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    • 1999
  • ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

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Effects of Cooling Rate of Pre-heated Substrate on C-Axis Orientation of ZnO Prepared by RF Sputter Deposition (RF 스퍼터를 이용하여 ZnO 증착 시 기판의 냉각율이 박막의 c-축 배향성에 미치는 영향)

  • Park, Sung-Hyun;Lee, Neung-Hun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.12
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    • pp.560-564
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    • 2006
  • ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

Properties of SBT Thin Film Synthesized by Self-seed Layer Method (Self-seed layer를 이용하여 증착한 SBT박막의 특성)

  • Kim, Hyung-Sub;Hwang, Dong-Hyun;Yoon, Ji-Un;Son, Young-Gook
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.215-220
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    • 2007
  • Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

Luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor deposited by RF magnetron sputter deposition technique

  • Kang, Jong-Hyuk;Han, Ji-Yeon;Jang, Ho-Seong;Yoo, Hyoung-Sun;Yun, Sun-Jin;Jeon, Duk-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1547-1550
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    • 2007
  • $YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

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RF Magnetron Sputter로 증착 한 HfN 박막의 Plasma Power 변화에 따른 Nano-electroribology 특성 변화 연구

  • Park, Myeong-Jun;Kim, Seong-Jun;Kim, Su-In;Lee, Chang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.354.2-354.2
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    • 2014
  • 최근 반도체 산업의 발전에 따라 반도체 소자 내 배선재료로 사용되던 Aluminium (Al)의 대체물로 Copper (Cu)가 사용되고 있다. Cu는 Al보다 우수한 전도성과 비용이 저렴하다는 장점이 있으나 반도체 기판과의 확산으로 이를 해결해야만 하는 문제점이 있다. 이는 Si와 Cu사이에 확산방지막을 사용하여 해결할 수 있는데 Hafnium Nitride (HfN) 박막은 다른 물질과 비교해 고온에서의 안정성과 낮은 비저항을 가지고 있어 주목을 받고 있다. 본 연구에서는 rf magnetron sputter 방법으로 박막 증착 시에 인가하는 rf power가 박막의 표면 특성에 어떠한 영향을 미치는지 nano-indenter를 사용해 surface hardness와 elastic modulus의 변화를 중심으로 알아보았다. 시료는 rf magnetron sputter로 증착 시 인가하는 plasma power를 60W와 80W로 달리하여 증착하였다. 증착가스는 Ar과 $N_2$를 조절하여 사용하였고 총 유량을 40 sccm 으로 고정하였으며, 이 때 압력은 3mTorr로 유지하였다. 실험결과 plasma power를 80W로 인가하여 증착한 시료의 surface hardness (18.48 GPa)가 60W로 증착한 시료의 surface hardness (12.03 GPa)보다 큰 값을 나타내었다. 이와 마찬가지로 80W로 증착한 시료의 elastic modulus(187.16 GPa)도 60W로 증착한 시료의 탄성계수 (141.15 GPa)보다 큰 값을 나타내었다. 이는 증착 시 인가하는 plasma power의 크기가 증가하면 박막표면에 compressive stress가 생성되어 박막의 surface hardness와 elastic modulus가 상대적으로 높게 측정되는 것으로 생각된다.

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Three-dimensional Self-consistent Particle-in-cell and Monte Carlo Collisional Simulation of DC Magnetron Discharges

  • Kim, Seong-Bong;Chang, Hyon-U;Yoo, Suk-Jae;Oh, Ji-Young;Park, Jang-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.526-526
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    • 2012
  • DC magnetron discharges were studied using three-dimensional self-consistent particle-in-cell and Monte Carlo collisional (PIC-MCC) simulation codes. Two rectangular sputter sources (120 mm * 250 mm and 380 mm * 200 mm target sizes) were used in the simulation modeling. The number of incident ions to the Cu target as a function of position and simulation time was obtained. The target erosion profile was calculated by using the incident ions and the sputtering yields of the Cu target calculated with SRIM codes. The maximum ion density of the ion density distribution in the discharge was about $10^{10}cm^{-3}$ due to the calculation speed limit. The result may be less than one or two order of magnitude smaller than the real maximum ion density. However, the target erosion profiles of the two sputter sources were in good agreement with the measured target erosion profiles except for the erosion profile near the target surface, in which which the measured erosion width was broader than the simulation erosion width.

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