DOI QR코드

DOI QR Code

Properties of SBT Thin Film Synthesized by Self-seed Layer Method

Self-seed layer를 이용하여 증착한 SBT박막의 특성

  • Kim, Hyung-Sub (School of Materials Science and Engineering, Pusan National University) ;
  • Hwang, Dong-Hyun (School of Materials Science and Engineering, Pusan National University) ;
  • Yoon, Ji-Un (School of Materials Science and Engineering, Pusan National University) ;
  • Son, Young-Gook (School of Materials Science and Engineering, Pusan National University)
  • Published : 2007.05.30

Abstract

Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

[ $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ ]의 구조로 $SBT(SrBi_2Ta_2O_9)$ 박막을 Self-seed layer를 사용하여 R.F. Magnetron sputter를 이용하여 증착을 하였다. Self-seed layer는 기판온도 RT(room temperature)와 $600^{\circ}C$에서 두께 30 nm으로 증착하였다. Self-seed layer의 결정화 온도를 알아보기 위해 열처리온도를 변화시켰고 이를 XRD를 통하여 결정화 유무를 확인하였다. Self-seed layer 위에 증착한 SBT를 XRD와 전기적 측정을 통해 특성을 관찰하였다.

Keywords

References

  1. D. J. Taylor, R. E. Jones, Y. T. Li, P. Zurcher, P. Y. Chu and S. J. Gillespie, 'Intergration Aspects and Electrical Properties of $SrBi_2Ta_2O_9$ for Non-Volatile Memory Applications,' Mat. Res. Soc. Symp. Proc., 433, 97-108 (1996)
  2. T. Sumi, N. Moriwaki, G. Nakane, T. Nakakuma, Y. Judai, Y. Uemoto, Y. Nagano, S. Hayashi, M. Azuma, T. Otsuki, G. Kano, J.D. Cuchiaro, M.C. Scott, L.D. McMillan, and C.A. Paz De Araujo, '256 kb Ferroelectric Nonvolatile Memory Technology for 1T/1C cell with 100 ns Read/Write Time at 3V.' intergrated Ferroelectric., 6, 1-13 (1995) https://doi.org/10.1080/10584589508019349
  3. T. Mihara, H. Watanabe, C.A. Paz de Araujo, and J.Cuchiaro, 'Feasibility for Memory Devices and Electrical Characterization of Newly developed Fatigue Free Capacitors.' Proc. 4th international Symp. on integrated Ferroelectric., March 9-11. 137-157 (1992)
  4. T. Mihara, H. Yoshimori, H. Watanabe, T. Itoh, C. Paz de Araujo, and McMillian, 'Superior Electrical Characteristics of Bi-layered Perovskite Thin Films and Comparison with PZT.' Abst. of 7th international Symp. on Intergrated Ferroelectrics., March 20-22, 108c (1995)
  5. J.J. Lee, C.L. Thio, and S.B. Desu, 'Retention and imprint properties of Ferroelectric Thin Films.' Phys. Stat., Sol.(a). 151, 171-182 (1995) https://doi.org/10.1002/pssa.2211510120
  6. Min Cheol Kim, Woo Suk Jung and Young Guk Son, 'Preparation of $ZrO_2$ and SBT thin films for MFIS structure and electrical properties.' J. Kor. Ceram. Soc., Vol.39, No.4, 377-385, (2002) https://doi.org/10.4191/KCERS.2002.39.4.377
  7. B. H. Kim, J. K. Joo and S. P. Song, 'The Preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process(I. Effects of Rapid Thermal Annealing and Post Annelaing Temperatures on Dielectric and Electrical Properties of MOD Derived $Sr_{0.8}Bi_{2.4}Ta_2O_9$ Thin Films),' J. Kor. Ceram. Soc., 35(9), 945-952 (1998)
  8. T. Noguchi, T. Hase and Y. Miyasaka, 'Analysis of the Dependece of Ferroric Properties of Strontium Bismuth Tantalate(SBT) Thin films on the Composition and Process Temperature,' Jpn. J. Appl. Phys., 35, 4900-4904 (1996) https://doi.org/10.1143/JJAP.35.4900