• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.18-24
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• 2019

In this paper, expandable bobbin type multiple integrated coupled-inductor applied 4-paralled switching rectifier was proposed. To design the proposed inductor easily, inductance designing formula was derived through magnetic circuit analysis of the 4-paralleled integrated coupled-inductor. Furthermore, to verify practicality of the proposed inductor, it was applied in 600W class 4-paralleled interleaved switching rectifier, and the steady-state characteristics of the proposed inductor and discrete inductors were compared. Consequently, it was showed that the proposed inductor can replace the conventional discrete inductors with alternative electrical characteristic standard, hence miniaturization of the SMPS can be achieved. From the test result, test circuit with the proposed inductor showed maximum 97.1% of power conversion efficiency and under 18W of power loss where the circuit with discrete inductors showed 96.7% and 20W respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.2
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• pp.114-121
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• 2016

This paper is Instant space vector PWM(Pulse Width Modulation)power conversion devices in switching power semiconductors from my generation to losses and switching when the voltage surge and current surge of electronic noise(EMI: Electro Magnetic Interference / RFI: Radio Frequency Interference)to effectively minimize the power soft-switching power conversion circuit topologies of auxiliary resonant DC tank for the purpose of high performance realization of the electric power conversion system by the high-speed switching of a semiconductor device(AQRDCT simultaneously : an active auxiliary resonance using auxiliary Quasi-resonant DC tank)DC link snubber switch has adopted a three-phase voltage inverter. AQRDCL proposed in this paper can reduce the effective and current peak stress of the power semiconductors of the auxiliary resonant snubber circuit compared to the conventional active-resonant DC link snubber, it is not necessary to install the clamp switch of the auxiliary resonant DC link, DC the peak current and power loss of the bus line can be reduced.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.11
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• pp.2128-2135
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• 2009

In this paper, current limiter using a magnetic switching which is based on magnetic flux change in the case of fault is proposed. This current limiter consists of iron-core and three parts of coils. One is the primary coil connected to the power system. Another is the secondary coil wound to the opposite direction of the primary coil's winding. The other is the secondary of the secondary coil which is a movable copper plate winding and located below the secondary coil. In the normal state, the magnetic flux produced in the primary and secondary coils flows to the opposite directions each other and becomes to be canceled out. Therefore the voltages induced between the coils are zero. In the case of a fault, at the moment of a fault occurrence recognition, the switch connected to a secondary coil is opened and the secondary of the secondary coil is pulled out to the outside of the iron-core. Then, magnetic flux becomes to flow through the iron-core. Accordingly, the voltage is induced between the both ends of the primary coil and makes the current reduced. Therefore it is possible to cut off the circuit breaker easily with the proposed current limiter. This paper analyzes the current limiting effects and the detailed results are given.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.4
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• pp.511-519
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• 2013

Switching controllers for active magnetic bearings are claimed to minimize the copper losses because they do not use bias currents. In this study, we compare the performances of the switching controller with those of the widely used proportional-derivative (PD) controller. The PD controller is combined with a synchronous notch filter to reduce the effect of the unbalance disturbance. For a fair and objective comparison, the PD controller is designed systematically. The switching controller is designed so that the dynamics of the two controllers are almost identical. A system model is developed. This model includes the flexible modes of the rotor and the dynamics of the sensors and amplifiers. The simulation results show that the switching controller indeed reduces the copper loss at lower speeds. However, it fails to operate around the speed close to the bending mode of the rotor.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.419-422
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• 1996

In this paper, we consider variable structure controller design of a active magnetic bearing(AMB). In particular, we design a switching hyperplane, considering coupling characteristic among each magnet. This method is designed by applying decentralized control method. Controller design consist of two factors that is, one is linear control part to drive state variables to zero asymptotically and the other is a nonlinear controller part to maintain within neighborhood of switching hyperplane. Finally, A control method designed here is checked by simulation, which shows good results.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.186-187
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• 2002

Recently, there has been much interest in magnetic thin film patterned in submicron scale because of possible ultrahigh density storage media or logical device applications [1-3]. Various geometries such as rectangle, circle, ring and ellipse type dots have been studied to find the shape showing stable switching behavior from repeated cycles. However, rectangle and circle types may not be suitable for device applications because they have two uncontrollable different magnetization reversal modes: C state and S state, resulting in different coercivity and irreproducible switching[4]. (omitted)

• Journal of Magnetics
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• v.10 no.2
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Journal of Magnetics
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• v.17 no.1
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• pp.36-41
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• 2012

The transcranial magnetic stimulation recharges the energy storing condenser, and sends the stored energy in the condenser to the pulse shaping circuit, which then delivers it to the stimulating coil. The previous types of transcranial magnetic stimulation required a booster transformer, secondary rectifier for high voltages and a condenser for smooth type. The energy storing condenser is recharged by switching the high-voltage direct current power. Loss occurs due to the resistance in the recharging circuit, and the single-pulse output energy in the transcranial magnetic stimulation can be changed because the recharging voltage cannot be adjusted. In this study a booster transformer, which decreases the volume and weight, was not used. Instead, a current resonance inverter was applied to cut down the switching loss. A transcranial magnetic stimulation, which can simultaneously alter the recharging voltage and pulse repeats, was used to examine the output characteristics.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.188-193
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• 2007

We simulated the magnetization reversal behavior of submicron-thickness magnetic films by applying pulses of sub-ns-long durations and amplitudes along the easy axis. The films were rectangular and elliptical $Ni_{80}Fe_{20}$, and their thickness was 2 nm and 4 nm. We observed different behaviors depending upon the shape and thickness of the films and found a normal non-switching in regions in which we expected complete switching after relaxation. In the elliptical film, the non-switching regions were found to be random and to be widely distributed throughout the switching map. The strong demagnetization field along the z-axis, the film thickness direction, is likely responsible for this abnormal behavior. In the rectangular film, the abnormal non-switching regions were less distributed than they were in the elliptical film due to edge domains resulting from the small $M_z$ or demagnetization field during the switching. Our simulation confirms that large demagnetization is detrimental to the ultra-fast magnetization reversal of magnetic ultra-thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.