• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Journal of Powder Materials
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• v.31 no.2
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• pp.146-151
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• 2024

Pure SnO₂ has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO₂ with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO₂ have a porous microstructure, with a porosity of > 40%. In pure SnO₂, a high sintering temperature of approximately 1300℃ is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO₂, the compositions of the samples were Sn_1-xTi_xO₂-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO₂, densification was shown to be improved when the samples were sintered at 950℃. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950℃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1118-1122
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• 2006

In this study, in order to develop the low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were manufactured and their microstructure, ferroelectric and piezoelectric properties were investigated. By increasing sintering temperature, remanent polarization$(P_r)$ was increased due to the increase of sinterability and grain size. However, coercive $field(E_c)$ showed an opposite tendency to remanent polarization owing to the feasibility of domain wall motion. At the sintering temperature of $900^{\circ}C$, dielectric $constant({\varepsilon}_r)$, electromechanical coupling $factor(k_p)$, piezoelectric $constant(d_{33})$ and mechanical quality $factor(Q_m)$ showed the optimal value of 1095, 0.60, 363 and 1055, respectively, for multilayer piezoelectric actuator application.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.289-295
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• 1997

Effect of ceramic processing was investigated on the microstructure and electronic properties of low loss Mn-Zn ferrite. Addition of CaO and SiO2 to calcined powder rather than to raw materials mixtured resulted in finer-grained microstructure. Higher oxygen pressure during sintering caused microstructural inhomogeneity and the increase in power loss and disaccommodation factor. Relatively low power loss was found for sintering up to 130$0^{\circ}C$ from powders calcined at high temperature and milled shortly. It was caused by slow densification rate and normal grain growth up to 130$0^{\circ}C$. Calcination at low temperature and prolonged milling enhanced den-sification, which gave a fine grained microstructure and low powder loss at sintering temperture below 120$0^{\circ}C$. Sintering temperature above 125$0^{\circ}C$, however, showed abnormal grain growth.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.680-685
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• 2009

Using a polyurethane foam replica method, porous hydroxyapatite scaffolds (PHS) were fabricated using conventional and microwave sintering techniques. The microstructure and material properties of the PHS, such as pore size, grain size, relative density and compressive strength, were investigated at different sintering temperatures and holding times to determine the optimal sintering conditions. There were interconnected pores whose sizes ranged between about 300 ${\mu}m$ and 700 ${\mu}m$. At a conventional sintering temperature of 1100$^{\circ}C$, the scaffold had a porous microstructure, which became denser and saw the occurrence of grain growth when the temperature was increased up to 1300$^{\circ}C$. In the case of microwave sintering, even at low sintering temperature and short holding time the microstructure was much denser and had smaller grains. As the holding time of the microwave sintering was increased, higher densification was observed and also the relative density and compressive strength increased. The compressive strength values of PHS were 2.3MPa and 1.8MPa when conventional and microwave sintering was applied at 1300$^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.726-734
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• 1995

Pb(Zr0.53Ti0.47)O3 (PZT) ceramics having different microstructures were fabricated at low temperatures using calcined PZT powders with addition of excess PbO powder and/or ball milling. The effects of excess PbO and ball milling time on the microstructure, the sintering characteristic, and the mechanical properties of these ceramics were studied. Fine powders with average particle size of 0.38㎛ could be obtained by ball milling with 2.5 mm Ф zirconia balls for 120 hours. By the addition of 2mol% of excess PbO to these powders, it was possible to obtain well-densitified PZT ceramics at low sintering temperature of 980℃. Densification behavior of PZT was affected by the addition of excess PbO powder, while, grain growth was hardly affected by PbO addition. It was observed that Vicker's hardness decreased and fracture toughness increased with the increasing amount of PbO. At 1mol% excess PbO, it was shown that the minimum values of hardness and maximum fracture toughness were achieved. In addition, with increasing sintering time, the fracture toughness decreased and the hardness increased.

• Journal of Powder Materials
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• v.11 no.5
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• pp.421-426
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• 2004

The microstructure and mechanical property of hot-pressed $Al_2O_3/Cu$ composites with a different temperature for atmosphere changing from H$_{2}$ to Ar have been studied. When atmosphere-changed from H$_{2}$ to Ar gas at 145$0^{\circ}C$, the hot-pressed composite was characterized by inhomogeneous microstructure and low fracture strength. On the contrary, when atmosphere-changed at low temperature of 110$0^{\circ}C$ the composite showed more homogeneous microstructure, higher fracture strength and smaller deviation in strength. Based on the thermodynamic consideration and microstructural analysis, it was interpreted that the Cu wetting behavior relating to the formation of CuAlO$_{2}$ is probably responsible for strong dependence of microstructure on atmosphere changing temperature. The reason for a strong sensitivity of fracture strength and especially of its deviation to atmosphere changing temperature was explained by the microstructural inhomogeneity and by the role of CuAlO$_{2}$ phase on the interfacial bonding strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.217-218
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• 2006

In this study, In order to develop the low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were manufactured with the sintering temperature, and their microstructure and piezoelectric properties were investigated. At the composition ceramics sintered at $900^{\circ}C$, dielectric constant(${\varepsilone}_r$), electromechanical coupling factor($k_p$), piezoelectric constant($d_{33}$) and mechanical quality factor(Qm) showed the optimal value of 1095, 0.60, 363 and 1055, respectively, for multilayer piezoelectric actuator application.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.216-221
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• 2016

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature ($300^{\circ}C$) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.