• 대한금속재료학회지
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• 제46권10호
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• pp.652-661
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• 2008

Reduction of NOx in emission gas, improvement of engine efficiency, and extension of warranty period has made demands for developing materials more corrosively resistant to the inner-muffler environments or predicting the lifetime of materials used in muffler more precisely. The corrosion inside muffler has been explained with condensate corrosion mainly though thermal oxidation experiences prior to condensate corrosion. Hence, the aim of this study is to describe how the thermal oxidation affects the corrosion of stainless steel exposed to the inner-muffler environments. Auger electron spectroscopy and electrochemical tests were employed to analyze oxide scale and to evaluate corrosion resistance, respectively. Thermal oxidation has different role of condensate corrosion depending on the temperature: inhibiting condensate corrosion below $380^{\circ}C$ and enhancing condensate corrosion above $380^{\circ}C$. The low temperature oxidation causes to form compact oxide layer functioning a barrier for penetrating condensate into a matrix. Although though thermal oxidation caused chromium-depleted layer between oxide layer and matrix, the enhancement of the condensate corrosion in high temperature oxidation resulted from corrosion-induced crevice formed by oxide scale rather than corrosion in chromium-depleted layer. It was proved by aids of anodic polarization tests and measurements of pitting corrosion potentials. By the study, the role of high temperature oxidation layer affecting the condensate corrosion of stainless steels used as muffler materials was well understood.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.58-61
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• 2009

추진제로써 아산화질소를 활용하기 위해 아산화질소의 촉매 분해 특성에 대한 연구를 수행하였다. 아산화질소를 분해하기 위해 Ru와 Pt 촉매를 $Al_2O_3$ 지지체에 함침법을 이용하여 담지하였고, 관형 반응기를 사용하여 GHSV와 반응온도에 따른 아산화질소의 전환율을 측정하였다. GHSV는 낮을수록, 반응온도는 높을수록 전환율이 높았고, Ru/$Al_2O_3$ 촉매가 Pt/$Al_2O_3$ 촉매보다 우수한 성능을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 한국표면공학회지
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• 제55권4호
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• pp.215-221
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• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• 한국진공학회지
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• 제5권3호
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• pp.223-228
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• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.577-578
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• 2012

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 2008년도 추계학술대회 논문집
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• pp.205-207
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• 2008

• 한국세라믹학회지
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• 제12권2호
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• pp.10-14
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• 1975

Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.