• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 한국재료학회지
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• 제14권5호
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• pp.368-373
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• 2004

To improve the conventional cathode-supported tubular solid oxide fuel cell (SOFC) from the viewpoint of low cell power density, expensive fabrication process and high operation temperature, the anode-supported tubular solid oxide fuel cell was investigated. The anode tube of Ni-8mol% $Y_2$O$_3$-stabilized $ZrO_2$ (8YSZ) was manufactured by extrusion process, and, the electrolyte of 8YSZ and the multi-layered cathode of $LaSrMnO_3$(LSM)ILSM-YSZ composite/$LaSrCoFeO_3$ were coated on the surface of the anode tube by slurry dip coating process, subsequently. Their cell performances were examined under gases of humidified hydrogen with 3% water and air. In the thermal cycle condition of heating and cooling rates with $3.33^{\circ}C$/min, the anode-supported tubular cell showed an excellent resistance as compared with the electrolyte-supported planar cell. The optimum hydrogen flow rate was evaluated and the air preheating increased the cell performance due to the increased gas temperature inside the cell. In long-term stability test, the single cell indicated a stable performance of 300 mA/$\textrm{cm}^2$ at 0.85 V for 255 hr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.412-413
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• 2007

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

• 한국재료학회지
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• 제28권1호
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

• 한국세라믹학회지
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• 제50권3호
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• pp.226-230
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• 2013

We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

• 한국수소및신에너지학회논문집
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• 제14권4호
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• pp.335-347
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• 2003

High temperature electrolysis (HTE) can become a key target technology for fulfilling the hydrogen requirement for the future hydrogen economy. This technology is based upon the partial replacement of electricity with heat energy for the electrolysis. Although the current research status of high temperature electrolysis in many countries remains at the small laboratory scale, the technology has great potential for producing hydrogen at a higher efficiency than low-temperature electrolysis (LTE). The efficiency of LTE is not expected to rise above 40%, whereas the efficiency of HTE has been reported to be above 50%. The higher efficiency of HTE would reduce costs by more than 30% compared to LTE. In this study, the technical data regarding the HTE of water and the resulting hydrogen production are reviewed, with an emphasis on the application of high temperature solid electrolyte and oxide electrodes for the HTE process.

• 설비공학논문집
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• 제19권2호
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• pp.133-141
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• 2007

The drag reduction (DR) and heat transfer efficiency reduction (HTER) of nonionic surfactant according to the fluid velocity, temperature and surfactant concentration were investigated experimentally. For this study, several kinds of new surfactant which contains amine-oxide and betaine were developed. And experimental apparatus equipped with two water storage tanks temperature controlled, pumps, testing pipe network, two flowmeters, two pressure gauges, heat exchanger, and data logging system was built. Results showed that existing alkyl ammonium surfactant (CTAC) had DR of $0.6{\sim}0.8$ for $1,000{\sim}2,000\;ppm$ in fluid temperature of $50{\sim}60^{\circ}C$ and had very low DR in fluid temperature over $70^{\circ}C$. And new amino oxide and betaine surfactant (SAOB) had lower DR in fluid temperature of $50{\sim}60^{\circ}C$ compared with CTAC but in fluid temperature of $70{\sim}80^{\circ}C$ DR was $0.6{\sim}0.8$ for 1$1,000{\sim}2,000\;ppm$.

• 한국재료학회지
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• 제25권1호
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.