• 전기전자학회논문지
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• 제20권2호
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• pp.205-208
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• 2016

본 논문에서는 서로 다른 터치스크린용 실버페이스트를 본딩 방식으로 ITO 필름(ITO : Indium Tin Oxide film)위에 전도성 패턴을 형성하고 5장씩 본딩하여 건조 하였다. 여기서 건조 조건은 ITO 필름( ITO film)이 산화가 발생하지 않는 조건 이다. 신뢰성 테스트는 열 충격테스트와 고온 고습테스트를 진행한다. 각 테스트는 5장씩의 전도성 패턴 본딩상태를 확인한다. 전도성 패턴본딩을 각 240, 480, 615 시간 마다 상태를 확인하였다. 이러한 신뢰성 테스트 통해 서로 다른 실버페이스트의 접착력, 전도성의 변화 등을 알 수 있으므로 품질 저하를 막을 수 있다. 그리고 저온경화 실버페이스트는 표면에 변색이 빨리 올 수 있음을 알 수 있었다.

• 한국정보전자통신기술학회논문지
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• 제2권1호
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• pp.3-9
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• 2009

AMOLED 디스플레이는 LCD에 비해 넓은 시야각, 빠른 응답 속도, 박막화의 용이성 등의 많은 장점들을 갖고 있으나 불균일한 TFT의 전기적 특성과 전원선의 전압 강하에 의한 휘도 불균일, 잔상 현상 및 수명 등과 같은 많은 문제점들이 있다. 이 중에서 본 논문에서는 구동 TFT 소자의 hysteresis 현상에 의해 발생하는 가역적 잔상 현상을 개선하고자 한다. TFT의 hysteresis 특성을 개선하기 위해 게이트 산화막 증착 전에 표면 처리 조건을 변경하였다. 게이트 산화막 증착 전에 실시한 자외선 및 수소 플라즈마 표면 처리는 게이트 산화막과 다결정 실리콘 박막 사이의 계면 trap 밀도를 $3.11{\times}10^{11}cm^{-2}$로 감소시켰고, hysteresis 레벨을 0.23 V로 줄였으며 출력 전류 변화율을 3.65 %로 감소시켰다. 자외선 및 수소 플라즈마 처리를 행함으로써 AMOLED 디스플레이의 가역적 잔상을 많이 개선할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• 한국세라믹학회지
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• 제45권8호
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• pp.459-463
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• 2008

$P_2O_5-SnO_2$ system $0.5SnO_2-xP_2O_5-(0.5-x)B_2O_3$(x=0.1, 0.2, 0.3, 0.4, 0.5) glasses have been prepared for Pb-free low temperature glass frit. A investigation about the effect of $B_2O_3$ substitution on properties of $P_2O_5$ glasses, including glass structure properties, thermal properties, and mechanical properties was presented. Substance that is responsible for in moisture absorption existing circumstances supposes by phosphate, and excess moisture tolerance that state funeral's structure is improved breaking does not affect in state funeral bond that only most single bond remains, and can know that does not suffer big impact in boric oxide anomaly present state. This phenomenon estimates that connect with structure change. It is thought according to link this result the phosphoric acid happened structural change. $B_2O_3$ displacement quantity 0.3 mole put out $BO_4$ structures, but above 0.3 mole it changed with the case $BO_3$ structure which it displaces.

• 한국세라믹학회지
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• 제50권2호
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

• 한국수소및신에너지학회논문집
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• 제21권4호
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• pp.271-277
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• 2010

$(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• 한국진공학회지
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• 제7권3호
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• pp.167-272
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 $300^{\circ}C$일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.

• 한국분말재료학회지
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• 제27권1호
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• pp.52-57
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• 2020

In this study, we report the microstructure and characterization of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy powders and sintered samples. The effects of milling time on the microstructure and mechanical properties were investigated in detail. Microstructure and structural characterization were performed by scanning electron microscopy and X-ray diffraction. The mechanical properties of the sintered samples were analyzed through a compressive test at room temperature with a strain rate of 1 × 10^-4 s^-1. The microstructure of sintered Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy is composed of a BCC phase and a TiO phase. A better combination of compressive strength and strain was achieved by using prealloyed Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ powder with low oxygen content. The results suggest that the oxide formed during the sintering process affects the mechanical properties of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloys, which are related to the interfacial stability between the BCC matrix and TiO phase.

• 한국자기공명학회논문지
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• 제6권1호
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• pp.20-37
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• 2002

MnAPSO-34 and Mn-impregnated SAPO-34(Mn-SAPO-34) sample were prepared with various manganese contents and studied by electron spin resonance(ESR) and electron spin echo modulation(ESEM). Electron spin echo modulation analysis of 0.07mo1 ％ Mn(relative to p) in MnAPSO-34 with adsorbed D$_{2}$O shows two deuteriums at 0.26 nm and two at 0.36 nm from Mn. This suggests that two waters hydrate an MnO$_{4}$ configuration with a D-O bond orientation for the waters as expect for a negatively charged site at low manganese content (0.1 mol％), the ESR spectra of MnAPSO-34 and MnH-SAPO-34 exhibit the same parameters(g 2.01 and A 89 G), but the spectra obtained from MnAPSO-34 samples are better resolved. The decomposition temperature of as-synthesized MnAPSO-34 were in the range of 200-600 $^{\circ}C$ of the morpholine which is 12 $^{\circ}C$ higher than that in as-synthesized MnH-SAPO-34. Infrared spectra showed that the position of a band at 3450 $cm^{-1}$ / shifted about 15 $cm^{-1}$ / toward higher energy in MnAPSO-34 versus MnH-SAPO-34. The modulation depth of the two-pulse ESE of MnAPSO-34 with adsorbed D$_{2}$O is deeper than that of MnH-SAPO-34 with adsorbed D$_{2}$O. Three-pulse ESEM of MnAPSO-34 and MnH-SAPO-34 with adsorbed deuterium oxide shows that the local environments of manganese in the hydrated samples are different, suggesting that Mn(II) is framework substituted in MnAPSO-34 since it obviously occupies an extraframework position in MnH-SAPO-34.