• Journal of IKEEE
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• v.20 no.2
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• pp.205-208
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• 2016

In this paper, different types of touch screen silver pastes for bonding in conductive pattern formed over the ito film by bonding each sample of 5 was dried. The dry conditions, the oxidation of the ito film is a condition that does not occur. Reliability testing constant temp and humidity, cold-hot impact test is in progress. Each test will check the status of five sheets conductive pattern bonding. Conductive pattern bonding, after each 240,480,615 hours to check the status of silver pattern bonding. Reliability testing these through different silver pastes can see that the change in the adhesion and conductivity deterioration of the quality can be prevented, and reliability testing low temperature curing from the surface of silver pastes that can come as soon as the discoloration was unknown.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.459-463
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• 2008

$P_2O_5-SnO_2$ system $0.5SnO_2-xP_2O_5-(0.5-x)B_2O_3$(x=0.1, 0.2, 0.3, 0.4, 0.5) glasses have been prepared for Pb-free low temperature glass frit. A investigation about the effect of $B_2O_3$ substitution on properties of $P_2O_5$ glasses, including glass structure properties, thermal properties, and mechanical properties was presented. Substance that is responsible for in moisture absorption existing circumstances supposes by phosphate, and excess moisture tolerance that state funeral's structure is improved breaking does not affect in state funeral bond that only most single bond remains, and can know that does not suffer big impact in boric oxide anomaly present state. This phenomenon estimates that connect with structure change. It is thought according to link this result the phosphoric acid happened structural change. $B_2O_3$ displacement quantity 0.3 mole put out $BO_4$ structures, but above 0.3 mole it changed with the case $BO_3$ structure which it displaces.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.4
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• pp.271-277
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• 2010

$(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• Journal of Powder Materials
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• v.27 no.1
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• pp.52-57
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• 2020

In this study, we report the microstructure and characterization of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy powders and sintered samples. The effects of milling time on the microstructure and mechanical properties were investigated in detail. Microstructure and structural characterization were performed by scanning electron microscopy and X-ray diffraction. The mechanical properties of the sintered samples were analyzed through a compressive test at room temperature with a strain rate of 1 × 10^-4 s^-1. The microstructure of sintered Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy is composed of a BCC phase and a TiO phase. A better combination of compressive strength and strain was achieved by using prealloyed Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ powder with low oxygen content. The results suggest that the oxide formed during the sintering process affects the mechanical properties of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloys, which are related to the interfacial stability between the BCC matrix and TiO phase.

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.1
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• pp.20-37
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• 2002

MnAPSO-34 and Mn-impregnated SAPO-34(Mn-SAPO-34) sample were prepared with various manganese contents and studied by electron spin resonance(ESR) and electron spin echo modulation(ESEM). Electron spin echo modulation analysis of 0.07mo1 ％ Mn(relative to p) in MnAPSO-34 with adsorbed D$_{2}$O shows two deuteriums at 0.26 nm and two at 0.36 nm from Mn. This suggests that two waters hydrate an MnO$_{4}$ configuration with a D-O bond orientation for the waters as expect for a negatively charged site at low manganese content (0.1 mol％), the ESR spectra of MnAPSO-34 and MnH-SAPO-34 exhibit the same parameters(g 2.01 and A 89 G), but the spectra obtained from MnAPSO-34 samples are better resolved. The decomposition temperature of as-synthesized MnAPSO-34 were in the range of 200-600 $^{\circ}C$ of the morpholine which is 12 $^{\circ}C$ higher than that in as-synthesized MnH-SAPO-34. Infrared spectra showed that the position of a band at 3450 $cm^{-1}$ / shifted about 15 $cm^{-1}$ / toward higher energy in MnAPSO-34 versus MnH-SAPO-34. The modulation depth of the two-pulse ESE of MnAPSO-34 with adsorbed D$_{2}$O is deeper than that of MnH-SAPO-34 with adsorbed D$_{2}$O. Three-pulse ESEM of MnAPSO-34 and MnH-SAPO-34 with adsorbed deuterium oxide shows that the local environments of manganese in the hydrated samples are different, suggesting that Mn(II) is framework substituted in MnAPSO-34 since it obviously occupies an extraframework position in MnH-SAPO-34.