• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Journal of the Korean Wood Science and Technology
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• v.45 no.6
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• pp.671-681
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• 2017

Oil palm trunk (OPT) is a potential source of biomass for the production of biopellet. In the present research, biopellet were prepared from the meristem part of 25 years old OPT with various percentages of its bark (0, 10, and 30%). The highest biopellet durability was found for biopellet produced at $130^{\circ}C$ of pelletizing temperature with 30% bark content. Scanning electron microscopy (SEM) of biopellet showed the weak of particle bonding due to the low pelletizing pressure. The moisture content, unit density, ash content, and caloric value of OPT-based pellets were 3.55-5.35%, $525.56-855.23kg/m^3$, 2.76-3.44%, and 17.89-19.14 MJ/kg, respectively. The combustion profiles obtained by thermogravimetric analysis (TGA) seemed to be unaffected by the bark content on. Differential thermal analysis of TGA curve indicated different pyrolysis characteristic of hemicellulose, cellulose, and lignin.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• Design & Manufacturing
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• v.14 no.1
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• pp.15-21
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• 2020

Smart systems in different application areas such as automotive, medical and consumer electronics require a novel manufacturing method of electronic, optical and mechanical functions into products. Traditional methods including mechanical assembly, bonding of plastic and electronic circuit cause the problems in large size of products and complicated manufacturing processes. In this study, thermoforming and film insert molding were applied to fabricate a dome shaped plastic part embedded with electronic circuits. The deformation of patterns printed on PET film was predicted by thermoforming simulation using T-SIM, and the results were compared with those by experiment. In order to decrease spring-back after thermoforming, the Taguchi method of design of experiment was used. Through ANOVA analysis, it was found that mold temperature was the most dominant parameter for spring-back. By using flow analysis, gate design was performed to decrease injection pressure. During film insert molding, the wash-out of ink printed on film occurred for Polycarbonate. When the resin was changed to PMMA, the wash-out disappeared due to low melt temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.63-71
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• 2000

Infrared (IR) detector chip, which detects the IR radiation from all of the objects and converts to image signal, is usually fabricated using hybrid bonding technology with detector away and readout integrated circuit (ROIC). In this study, we designed the readout circuit and simulated its operations. Fabricating readout circuit chips, we measured operation results satisfying its design requirements in 6V supply voltage. After we mount the IR detector chip in the manufactured thermal image system, thermal images were implemented. The obtained thermal images for high and room temperature target objects are sufficiently recognizable. Using the low noise thermal Image system, we expect to obtain thermal images with higher temperature resolution.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.27-34
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• 1986

In the present study an attempt was made to synthesize $10TiO_2$.$90SiO_2$ glass by Sol-Gel process. Tetra-ethyl-ortho-silane and titanium-iso-propoxide were used as precursors. As the mutual solvent ethanol and iso-propanol were used. TEOS was partially hydrolyzed with one-fold mole of $H_2O$ prior to the reaction with titanium-iso-propoxide to control the difference of hydrolysis rate of the two metal alkoxides. At gelling temperature higher than 6$0^{\circ}C$ it was difficult to obtain monolithic gels. At such a low temperature as 85$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Ti bonding was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).