• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.43-50
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• 2007

In a high-speed flash style or a pipelining style analog-to-digital converter (A/D converter), the DC reference fluctuation caused by external noises becomes serious, as the sampling frequency is increased. To reduce the fluctuations in conventional A/D converters, capacitors have been simply used, but the layout area was large. Instead of capacitors, a low-noise and small-size DC reference circuit based on transmission gate (TG) is proposed in this paper. In order to verify the proposed technique, we designed and manufactured a 6-bit 2GSPS CMOS A/D converter. The A/D converter is designed with a 0.18um 1-poly 6-metal n-well CMOS technology, and it consumes 145mW at 1.8V power supply. It occupies the chip area of 977um by 1040um. The measured result shows that SNDR is 36.25 dB and INL/DNL is within 0.5LSB, even though the DC reference fluctuation is serious.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.1
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• pp.179-183
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• 2019

The system stability must be ensured from the switching noise due to the power conversion efficiency and power conversion system miniaturization. Therefore, countermeasures to reduce switching noise during power conversion are essential. Thus, in the previous paper, we constructed the DC / DC Buck Converter circuit using MPQ4432 driver of MPS, and simulated the switching noise characteristics which occurs when the components are arranged differently in the 4 - layer PCB circuit structure with reference plane. In this paper, two different simulated circuits are fabricated and the characteristics of the conducted emission and the radiated emission are analyzed in the same way as the simulation. As a result, it was confirmed that the Conducted Emission characteristic was reduced by 2 ~ 9dB in the low frequency band and 6 ~ 7dB in the high frequency band depending on the configuration of the current return path. And the radiated emission characteristic is reduced by 9 dB. Conducted emission simulation results show that 6 ~ 7dB in the low frequency range and 2 ~ 9dB in the measurement result are somewhat different. In the high frequency band, it is confirmed that the experimental and simulation results are about 7dB. And Radiated Emission confirmed 12dB decrease in simulation, but confirmed decrease of 9dB in measurement result. It is confirmed that there is a slight difference in the amount of reduction, but the design of the power conversion circuit improves the noise characteristics according to the configuration of the current return path.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.817-823
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• 2011

This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.2
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• pp.154-162
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• 2007

In this paper, we propose a new AC-DC converter control method to comply with harmonics regulation(IEC 61000-3) effective for the inverter system of an air conditioner whose power consumption is less than 2,500W. There are many different ways of AC-DC converter control, but this paper focuses on the converter control method that is adopting an input reactor with low cost silicon steel core to strengthen cost competitiveness of the manufacturer. The proposed control method controls input current every half cycle of the line frequency to get unit power factor and at the same time to reduce switching loss of devices and acoustic noise from reactor. This kind of converter is known as a Partial Switching Converter(PSC). In this study, theoretical analysis of the PSC has been performed using Matlab/Simulink while a 16-bit micro-processor based converter has been used to perform the experimental analysis. In the theoretical analysis, electrical circuit models and equations of the PSC are derived and simulated. In the experiments, micro-processor controls input current to keep the power factor above 0.95 by reducing the phase difference between input voltage and current and at the same time to maintain a reference DC-link voltage against voltage drop which depends on DC-link load. Therefore it becomes possible to comply with harmonic regulations while the power factor is maximized by optimizing the time of current flow through the input reactor for every half cycle of line frequency.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.25-34
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• 1996

In this paper, we have designed signal conditioning circuitry for piezoresistive pressure sensor. Signal conditioning circuitry consists of voltage reference circuit for sensor driving voltage and instrument amplifier for sensor signal amplification. Signal conditioning circuitry is simulated using HSPICE in a single poly double metal $1.5\;{\mu}m$ BiCMOS technology. Simulation results of band-gap reference circuit showed that temperature coefficient of $21\;ppm/^{\circ}C$ at the temperature range of $0\;{\sim}\;70^{\circ}C$ and PSRR of 80 dB. Simulation results of BiCMOS amplifier showed that dc voltage gain, offset voltage, CMRR, CMR and PSRR are outperformed to CMOS and Bipolar, but power dissipation and noise voltage were more improved in CMOS than BiCMOS and Bipolar. Designed signal conditioning circuitry showed high input impedance, low offset and good CMRR, therefore, it is possible to apply sensor and instrument signal conditioning circuitry.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.60-67
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• 2008

A low-power 2.4GHz fractional-N frequency synthesizer has been designed for 2.4GHz ISM band applications such as Bluetooth, Zigbee, and WLAN. To achieve low-power characteristic, the design has been focused on the power optimization of power-hungry blocks such as VCO, prescaler, and ${\Sigma}-{\Delta}$ modulator. An NP-core type VCO is adopted to optimize both phase noise and power consumption. Dynamic D-F/Fs with no static DC current are employed in designing the low-power prescaler circuit. The ${\Sigma}-{\Delta}$ modulator is designed using a modulus mapping circuit for reducing hardware complexity and power consumption. The designed frequency synthesizer which was fabricated using a $0.18{\mu}m$ CMOS process consumes 7.9mA from a single 1.8V supply voltage. The experimental results show that a phase noise of -118dBc/Hz at 1MHz offset, the reference spur of -70dBc at 25MHz offset, and the channel switching time of $15{\mu}s$ over 25MHz transition have been achieved. The designed chip occupies an area of $1.16mm^2$ including pads where the core area is only $0.64mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.591-600
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• 2010

In this paper, three kinds of 24 GHz low-power CMOS cross-coupled voltage controlled oscillators are designed and fabricated for a short-range radar applications using TSMC 0.13 ${\mu}m$ CMOS process. The basic CMOS crosscoupled voltage controlled oscillator is designed for oscillating around a center frequency of 24.1 GHz and subthreshold oscillators are developed for low power operation from it. A double resonant circuit is newly applied to the subthreshold oscillator to improve the problem that parasitic capacitance of large transistors in a subthreshold oscillator can push the oscillation frequency toward lower frequencies. The fabricated chips show the phase noise of -101~-103.5 dBc/Hz at 1 MHz offset, the output power of -11.85~-15.33 dBm and the frequency tuning range of 475~852 MHz. In terms of power consumption, the basic oscillator consumes 5.6 mW, while the subthreshold oscillator does 3.3 mW. The subthreshold oscillator with the double resonant circuit shows relatively lower power consumption and improved phase noise performance while maintaining a comparable frequency tuning range. The subthreshold oscillator with double resonances has FOM of -185.2 dBc based on 1 mW DC power reference, which is an about 3 dB improved result compared with the basic oscillator.