• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.3
• /
• pp.114-121
• /
• 2003

Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k materials on stress and stress distribution in via-line structures were investigated using three-dimensional finite element analyses. In the case of TEOS-embedded via-line structures, hydrostatic stress was concentrated at the via and the top of the lines, where the void was suspected to nucleate. On the other hand, in the via-line structures integrated with SiLK, large von-Mises stress is maintained at the via, thus deformation of via is expected as the main failure mode. A good correlation between the calculated results and experimentally observed failure modes according to dielectric materials was obtained.

• Transactions of the Korean hydrogen and new energy society
• /
• v.22 no.6
• /
• pp.934-941
• /
• 2011

Characteristics of low NOx burner is investigated. Low NOx burner introduced in this paper adopts two staged combustion with plasma burner for the 1st stage combustion. Extensive parametric tests were done to figure out the effect of burner stoichiometry, staged thermal load, electric power for plasma generation. Overall NOx production by burner shows effective reduction by adopting plasma staged burner. and the aspects depends on the fuel stoichiometry of 1st stage burner or operating condition of plasma burner. It is promising to use plasma burner as an alternative tools of low NOx burner technology.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.396-399
• /
• 2009

Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.198.1-198.1
• /
• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Korean Journal of Materials Research
• /
• v.17 no.7
• /
• pp.361-365
• /
• 2007

A deoxidized low-phosphorous copper processed by eight cycles of accumulative roll-bonding (ARB) was annealed at various temperatures ranging from 100 to $400^{\circ}C$. The annealed copper was characterized by transmission electron microscopy (TEM) and tensile & hardness test. TEM observation revealed that the ultrafine grains developed by the ARB still remained up to $350^{\circ}C$, however above $400^{\circ}C$ they were replaced by equiaxed and coarse grains due to an occurrence of the static recrystallization. The hardness of the copper decreased slightly with the annealing temperature up to $350^{\circ}C$, however they dropped largely above $400^{\circ}C$. Annealing characteristics of the copper were compared with those of an oxygen free copper processed by ARB and subsequently annealed.

• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.271-274
• /
• 2012

We examine dosimetry application of irradiated D-fructose materials using electron paramagnetic resonance (EPR). Consequently, we consider that fructose is one of best dosimetry materials. We found that fructose is one of best candidates for dosimetry due to high linearity tilt of EPR signal intensity as a function of dose, irrelevant to photon energy, constant fading value. Also, our results show that fructose materials can be applied as a radiation detector to very weak radiation doses of 0.001 Gray by using EPR at a low temperature (T = 220 K).

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1288-1289
• /
• 2006

Innovative SMC with low iron loss was made from iron powders with evaporated MgO insulation coating. The coating had greater heat-resistance than conventional phosphatic insulation coating, which enabled stress relieving annealing at higher temperature. Magnetic properties of toroidal samples (OD35mm,ID25mm, t5) were examined. The iron loss at 50Hz for Bm = 1.5T was lower 50% of conventional SMC and was almost the same with silicon iron laminations(t0.35). It became clear that MgO insulation coating has enough heat resistance and adhesiveness to powdersurface to obtain innovative SMC with low iron loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.190-193
• /
• 2013

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1777-1780
• /
• 2012

• 한국초전도학회:학술대회논문집
• /
• v.12
• /
• pp.47-47
• /
• 2002