Low Temperature Annealed Sol-Gel Aluminum Indium Oxide Thin Film Transistors

Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.