• Title/Summary/Keyword: low-k materials

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Synthesis of Carbon Nanotubes by Using Inductively Coupled Plasma Chemical Vapor Deposition at Low Temperature

  • Kim, Young-Rae;Jang, In-Goo;Cho, Hyun-Jin;Jeon, Hong-Jun;Cho, Jung-Keun;Hwang, Ho-Soo;Kong, Byung-Yun;Lee, Nae-Sung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.768-771
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    • 2007
  • Carbon nanotubes (CNTs) were synthesized by inductively coupled plasma CVD at $450^{\circ}C$. CNTs were grown on the 1-nm-thick Fe-Ni-Co with $C_2H_2$ and $H_2$ at different pressures and plasma powers. CNTs were grown longer in height as the $H_{\alpha}/CH$ ratios became lower by decreasing plasma powers and increasing growth pressures.

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Vapor Phase Epitaxy of Magnesium Oxide on Si(001) Using a Single Precursor

  • Lee, Sun-Sook;Lee, Sung-Yong;Kim, Chang G.;Lee, Sang-Heon;Nah, Eun-Ju;Kim, Yunsoo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.122-122
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    • 2000
  • Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

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Hydrogen Gas Sensing Characteristics of ZnO Wire-like Thin Films (나노선 형상의 산화아연 박막의 수소 가스 감지 특성)

  • Nguyen, Le Hung;Ahn, Eun-Seong;Park, Seong-Yong;Jung, Hoon-Chul;Kim, Hyo-Jin;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.427-431
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    • 2009
  • ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM, revealing a wire-like structure with a width of less than 100 nm and a length of several microns. The gas sensors using ZnO wire-like films were found to exhibit excellent $H_2$ gas sensing properties. In particular, the observed high sensitivity and fast response to $H_2$ gas at a comparatively low temperature of $200^{\circ}C$ would lead to a reduction in the optimal operating temperature of ZnO-based $H_2$ gas sensors. These features, together with the simple synthesis process, demonstrate that ZnO wire-like films are promising for fabrication of low-cost and high-performance $H_2$ gas sensors operable at low temperatures. The relationship between the sensor sensitivity and $H_2$ gas concentration suggests that the adsorbed oxygen species at the surface is $O^-$.

Preparation of $TiO_2$Nanocrystalline Powder at Low Temperature (저온 처리에 의한 결정형 $TiO_2$나노분말의 제조)

  • Seo, Dong-Seok;Lee, Jong-Kook;You, Hae-Geun;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.331-336
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    • 2001
  • TiOCl$_2$수용액과 암모니아수의 반응으로부터 얻은 titanium hydroxide 침전물에 대해 각각 NaOH 또한 HCl 처리를 통하여 비교적 낮은 온도에서 결정성이 우수하고, 높은 비표면적을 갖는 결정형 TiO$_2$나노분말을 제조하였다. 저온처리 조건을 변화시킴으로써 TiO$_2$분말의 결정상과 입자 모양을 제어할 수 있었는데, NaOH 처리한 다음 산처리한 분말에는 아나타제와 루틸상이 함께 형성되었으며 구형입자와 긴 스핀들 모양의 입자들로 이루어져 있었고, 비등수 처리 시에는 열처리를 통해 아나타제상의 구형 입자들을 얻을 수 있었다. Titanium hydroxide를 0.1M과 0.5M에 산처리한 분말은 모두 아나타제상을 나타내었는데, 0.1M의 분말은 구형입자로 이루어져 있었고, 0.5M의 경우는 대부분 구형입자들로 이루어져 있었지만 스핀들 모양의 입자들도 소량 관찰되었으며, 2M에 산처리한 분말은 루틸상으로서 모두 스핀들 모양의 입자들로 이루어져 있었고, 제조된 분말의 비표면적은 약 240-250$m^2$/g을 나타내었다.

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Thin Films Deposition Study Using Plasma Enhanced CVD with Low Dielectric Materials DEMS(diethoxymethlysiliane) below 45nm (PE-CVD를 이용한 45nm이하급 저유전물질 DEMS(Diethoxymethylsiliane) 박막증착연구)

  • Kang, Min-Goo;Kim, Dae-Hee;Kim, Yeong-Cheol;Seo, Hwa-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.148-148
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    • 2008
  • Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.

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Mechanical Characteristics of Stainless Steel TP 304, TP 316 under Low Temperature Environment (저온 기계 재료용 TP 304, TP 316 소재의 저온거동 특성 평가)

  • Cho, Seung-Hyun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.10
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    • pp.125-130
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    • 2017
  • Automotive materials and plant modules need to be prepared for freezing parts to operate in extreme areas such as Eastern Europe, Russia, and Canada. However, the only thing that has been done for ultra-qualifying materials for extremely low operating materials is that only the effects at low temperatures are conducted at room temperature, and the effects at low temperatures are only identified at low speeds. Therefore, this study examined the low-temperature characteristics of materials by conducting comparative tests on the mechanical properties of the room at the temperature and temperature of TP304 and TP316 materials, which are the most common materials.

Organic-Inorganic Hybrid Thermoelectric Material Synthesis and Properties

  • Kim, Jiwon;Lim, Jae-Hong
    • Journal of the Korean Ceramic Society
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    • v.54 no.4
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    • pp.272-277
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    • 2017
  • Organic-inorganic hybrid thermoelectric materials have obtained increasing attention because it opens the possibility of enhancing thermoelectric performance by utilizing the low thermal conductivity of organic thermoelectric materials and the high Seebeck coefficient of inorganic thermoelectric materials. Moreover, the organic-inorganic hybrid thermoelectric materials possess numerous advantages, including functional aspects such as flexibility or transparency, low cost raw materials, and simplified fabrication processes, thus, allowing for a wide range of potential applications. In this study, the types and synthesis methods of organic-inorganic thermoelectric hybrid materials were discussed along with the methods used to enhance their thermoelectric properties. As a key factor to maximize the thermoelectric performances of hybrid thermoelectric materials, the nanoengineering to control the nanostructure of the inorganic materials as well as the modification of the organic material structure and doping level are considered, respectively. Meanwhile, the interface between the inorganic and organic phase is also important to develop the hybrid thermoelectric module with excellent reliability and high thermoelectric efficiency in addition to its performance in various electronic devices.

The Effect of Low-Temperature Carbon Encapsulation on Si Nanoparticles for Lithium Rechargeable Batteries

  • Jung, Jaepyeong;Song, Kyeongse;Kang, Yong-Mook
    • Bulletin of the Korean Chemical Society
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    • v.34 no.7
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    • pp.2162-2166
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    • 2013
  • The tailored surface modification of electrode materials is crucial to realize the wanted electronic and electrochemical properties. In this regard, a dexterous carbon encapsulation technique can be one of the most essential preparation methods for the electrode materials for lithium rechargeable batteries. For this purpose, DL-malic acid ($C_4H_6O_5$) was here used as the carbon source enabling an amorphous carbon layer to be formed on the surface of Si nanoparticles at enough low temperature to maintain their own physical or chemical properties. Various structural characterizations proved that the bulk structure of Si doesn't undergo any discernible change except for the evolution of C-C bond attributed to the formed carbon layer on the surface of Si. The improved electrochemical performance of the carbon-encapsulated Si compared to Si can be attributed to the enhanced electrical conductivity by the surface carbon layer as well as its role as a buffering agent to absorb the volume expansion of Si during lithiation and delithiation.