Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thin Films Deposition Study Using Plasma Enhanced CVD with Low Dielectric Materials DEMS(diethoxymethlysiliane) below 45nm

PE-CVD를 이용한 45nm이하급 저유전물질 DEMS(Diethoxymethylsiliane) 박막증착연구

  • Kang, Min-Goo (Dept. Electrical and Electronic Engineering, Korea University of Technology and Education) ;
  • Kim, Dae-Hee (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Kim, Yeong-Cheol (Dept. Electrical and Electronic Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (Dept. Electrical and Electronic Engineering, Korea University of Technology and Education)
  • 강민구 (한국기술교육대학교 전기전자공학과) ;
  • 김대희 (한국기술교육대학교 신소재공학과) ;
  • 김영철 (한국기술교육대학교 전기전자공학과) ;
  • 서화일 (한국기술교육대학교 전기전자공학과)
  • Published : 2008.11.06
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Abstract

Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.

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