• Progress in Superconductivity and Cryogenics
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• v.19 no.4
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• pp.31-39
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• 2017

European R&D on designing their version of a DEMO fusion tokamak has recently resulted in the testing of a prototype $Nb_3Sn$ Cable-in-Conduit Conductor (CICC) for the DEMO TF coil. The characteristics and reported results of low temperature performance tests with the prototype CICC sample are compared with those from CICC samples incorporating other recent $Nb_3Sn$ cable designs. The EU-DEMO TF CICC prototype shows performance characteristics similar to that of the ITER CS CICC with short twist pitch. This is a first for a CICC sample that does not have a circular cross section. Assessment of its internal magnetostatic self-field suggests that a reduction in the internal self-field due to the rectangular geometry of the EU-DEMO TF CICC prototype compared to one with a circular geometry may have contributed to the performance characteristics showing current sharing temperature ($T_{cs}$) initially increase then stabilize with repeated electromagnetic loading, similarly to ITER CS CICC results. However, constraints on the internal self-field are not a sufficient condition for this $T_{cs}$ characteristic to occur.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.205-205
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• 2015

최근, 비정질 산화물 반도체를 이용한 TFT는 투명성, 유연성, 저비용, 저온공정이 가능하기 때문에 차세대 flat-panel 디스플레이의 back-plane TFT로써 다양한 방면에서 연구되고 있다. 산화물 반도체 In-Zn-O-시스템에서는 Gallium (Ga)을 suppressor로 사용한 a-In-Ga-Zn-O (a-IGZO) 뿐만 아니라, Magnesium (Mg), Hafnium (Hf), Tin (Sn), Zirconium (Zr) 등의 다양한 물질이 연구되었다. 그 중 Silicon (Si)은 Ga, Hf, Sn, Zr, Mg과 같은 suppressor에 비해 구하기 쉬우며 가격적인 측면에서도 저렴하다는 장점이 있다. solution 공정으로 제작한 산화물 반도체 TFT는 진공 시스템을 사용한 공정보다 공정시간이 짧고, 저비용, 대면적화가 가능하다는 장점이 있다. 하지만, 투명하고 유연한 device를 제작하기 위해서는 저온 공정과 low thermal budget은 필수적이다. 이러한 측면에서 MWI (Microwave Irradiation)는 저온공정이 가능하며, 짧은 공정 시간에도 불구하고 IZO 시스템의 산화물 반도체의 전기적 특성 향상을 기대할 수 있는 효율 적인 열처리 방법이다. 본 연구에서는 In-Zn-O 시스템의 TFT에서 silicon (Si)를 Suppressor로 사용한 a-Si-In-Zn-O (SIZO) TFT를 제작하여 두 가지 열처리 방법을 사용하여 TFT의 전기적 특성을 확인하였다. 첫 번째 방법은 Box Furnace를 사용하여 N2 분위기에서 $600^{\circ}C$의 온도로 30분간 열처리 하였으며, 두 번째는 MWI를 사용하여 1800 W 출력 (약 $100^{\circ}C$)에 2분간 열처리 하였다. MWI 열처리는 Box Furnace 열처리에 비해 저온 공정 및 짧은 시간에도 불구하고 향상된 전기적 특성을 확인 할 수 있었다.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.211-215
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• 2006

Conducting polymer (Polypyrrole) and Tin oxide ($SnO_{2}$) composite films have been fabricated with layer-by-layer technique. $SnO_{2}$ layer was screen-printed on $Al_{2}O_{3}$ substrate and then was dip-coated with polypyrrole (Ppy). The microstructures of composite films were evaluated by a field emission scanning electron microscope (FE-SEM) and FTIR spectral analysis. The change in sensitivity to various VOCs was observed. The target VOCs were methanol, ethanol, benzene and toluene. The sensitivities of the $Ppy/SnO_{2}$ sensor to benzene and toluene were very low at 1000 ppm (2.1 %, 1.5 %), while the sensitivities to methanol and ethanol was high (9 %, 11 %). It indicates that the sensors have selectivity to alcoholic gases such as methanol and ethanol.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Macromolecular Research
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• v.17 no.4
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• pp.240-244
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• 2009

High molecular weight(MW), 3-arm star poly(methyl methacrylate)(PMMA) with a narrow MW distribution($M_n$=570,000 g/mol, PDI=1.36) was successfully synthesized by activators regenerated by electron transfer(ARGET) atom transfer radical polymerization(ATRP). The polymerization was carried out with a trifunctional initiator/$CuBr_2$/N,N,N',N",N"-pentamethyldiethy lenetriamine(PMDETA) initiator/catalyst system in the presence of a tin(II) 2-ethylhexanoate [$Sn(EH)_2$] reducing agent at $90^{\circ}C$. The concentration of the copper catalyst was as low as 30 ppm, and a high initiation efficiency of the initiating sites was obtained. The chain-end functionality of the high MW, 3-arm star PMMA was confirmed by a chain extension experiment with styrene via ARGET ATRP, using the same catalyst system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.987-991
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• 2009

We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.740-744
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• 2017

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.335-338
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• 2007

Cost effectiveness is an important parameter for producing DSSCs as compared to the widely used conventional silicon based solar cells. A fluorine-doped tin oxide (FTO) substrate coated with a catalytic amount of platinum is used as counter electrode in dye-sensitized solar cell. Carbonaceous materials are quite attractive to replace platinum due to their high electronic conductivity, corrosion resistance towards $I_{2}$, good catalytic effect and low cost. In this paper, the unit DSSCs with Pt and CNT as a counter electrode were connected in series-parallel externally, then the current-voltage curves were investigated to find out the connection characteristics of the DSSC with CNT counter electrode. The connection characteristics of the DSSC with CNT counter electrode is superior to that of the DSSC with Pt counter electrode. And a parallel connection of the DSSC with CNT counter electrode has higher efficiency than a series connection of that.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.