• 제목/요약/키워드: low swing

검색결과 261건 처리시간 0.026초

High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics

  • Lee, Su-Jae;Hwang, Chi-Sun;Pi, Jae-Eun;Yang, Jong-Heon;Byun, Chun-Won;Chu, Hye Yong;Cho, Kyoung-Ik;Cho, Sung Haeng
    • ETRI Journal
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    • 제37권6호
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    • pp.1135-1142
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    • 2015
  • Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok;Lee, Jeong-Min;Lee, Jong-Ho;KoPark, Sang-Hee;Yoon, Sung-Min;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • ETRI Journal
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    • 제31권6호
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    • pp.660-666
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    • 2009
  • We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

변경 용이성 증대를 위한 컴포넌트 기반의 건설공정관리시스템 (A component-based construction process control system for increasing modifiability)

  • 김의룡;김신령;김영곤
    • 한국인터넷방송통신학회논문지
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    • 제15권6호
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    • pp.303-309
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    • 2015
  • 건설공정 및 안전관리는 프로젝트 전 의사결정의 중요한 수단이며, 프로젝트의 비용과 자원, 위험 등의 중요한 관리도구로 제시되기 때문에 프로젝트 결과에 대한 분석 및 평가 자료는 기업의 중요한 자산으로 기록된다. 또한 차후 유사 프로젝트에 대한 의사결정 수단으로 위험요인을 반복적으로 줄이는 안전장치가 되고 있다. 컴포넌트 기반 소프트웨어는 모든 것을 새로 개발하지 않고 준비된 유용한 부분들을 재사용함으로써 새로운 소프트웨어 프로덕트를 구축하여 컴포넌트기반의 소프트웨어 제공을 통한 장기간 지속적/안정적 매출기반을 확보하고 다양한 애플리케이션을 개발 공급하여야 할 것이다. 따라서 본 논문에서는 이러한 문제점을 해결하기 위해서 마인드맵을 이용한 컴포넌트기반 소프트웨어 공급을 통하여 저비용 틈새시장 공략으로 건설공정의 다양성 추세에 따른 비즈니스 효율성을 위한 공정생성 및 변경의 용이성의 증대를 위한 건설공정관리 시스템을 제안한다.

Development and Utilization of Wind Energy in Korea

  • Son, Choong-Yul;Byun, Hyo-In
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.349-353
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    • 2001
  • Korea has a variety of favorable conditions for utilizing wind as energy. First of all, as a geographical characteristic, it is a peninsular country with its three frontiers surrounded by sea. Such a location makes the country influenced, all the year round, both by sea winds and by seasonal winds, so that it has a good possibility of putting its rich wind resources to use as an energy source. Particularly, in view of the results of observations and analysis of actual data about wind sources, it is quite possible to build wind paver plants in many regions across the country, such as inhabited islands dotted on its southern and western coasts around the Korean peninsular, a number of uninhabited islets attached the main islands, large-scaled reclaimed lands, and major inland areas. In Korea, the attempt to develop the technology of wind paver generation started in the 1970's. It was since 1988, when the Law on the promotion of Alternative Energy Development was enacted, that research and development activities for employing the wind force as a part of energy source have got into full swing. At that moment, however, due to the low level of domestic technological development, such efforts were mainly focused on the attainment of basic technologies with regard to wind power generation. Recently, there have been many noticeable changes in the international as well as domestic environments, such as the conclusion of the International Climate Treaty and the increase in public concerns of natural environment. It is quite possible to predict that the demand for wind paver generation will increase in the near future. Therefore, recognizing that wind, as a clean energy source, can be a promising method for coping with the International Climate Treaty and for replacing the fossil fuel, oil, this essay investigates the development history of wind paver generation systems and the status of technological development in Korea and presents an appropriate model for the development of the paver generation system that can compete with other energy sources.

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용액 공정을 이용한 IZO 트랜지스터의 전기적 성능에 대한 박막 두께의 영향 (Effect of Thin-Film Thickness on Electrical Performance of Indium-Zinc-Oxide Transistors Fabricated by Solution Process)

  • 김한상;경동구;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.469-473
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    • 2017
  • We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

보행수 측정 및 보행패턴 분류 알고리즘 (A Study on a Algorithm of Gait Analysis and Step Count with Pressure Sensors)

  • 도주표;최대영;김동준;김경호
    • 전기학회논문지
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    • 제66권12호
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    • pp.1810-1814
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    • 2017
  • This paper develops an approach to the algorithm of Gait pattern Analysis and step measurement with Multi-Pressure Sensors. The process of gait consists of 8 steps including stance and swing phase. As 3 parts of foot is supporting most of human weight, multiple pressure sensors are attached on the parts of foot: forefoot, big toe, heel. As 3 parts of foot is supporting most of human weight, multiple pressure sensors are attached on the parts of foot: forefoot, big toe, heel. normal gait proceed from heel, forefoot and big toe over time. While normal gait proceeds, values of heel, forefoot and big toe can be changed over time. So Each values of pressure sensors over time could discriminate whether it is normal or abnormal gait. Measuring Device consists of non-inverting amplifiers and low pass filter. Through timetable of values, normal gait pattern can be analyzed, because of supported weight of foot. Also, the peak value of pressure can judge whether it is walking or running. While people are running, insole of shoes is floating in the air on moment. Using this algorithm, gait analysis and step count can be measured.

넓은 전압 범위와 개선된 파워-업 특성을 가지는 밴드갭 기준전압 발생기의 스타트-업 회로 (Start-up circuit with wide supply swing voltage range and modified power-up characteristic for bandgap reference voltage generator.)

  • 성관영;김종희;김태호;카오투안부;이재형;임규호;박무훈;하판봉;김영희
    • 한국정보통신학회논문지
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    • 제11권8호
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    • pp.1544-1551
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    • 2007
  • 본 논문에서는 넓은 동작전압 범위와 저소비 전력 그리고 개선된 파워-업 특성을 가지는 캐스코드 전류 거울형 CMOS 밴드갭 기준전압 발생기의 스타트-업 회로를 제안하였다. 새롭게 제안된 스타트-업 회로는 기존의 스타트-업 회로에 비해 안정적인 파워-업 특성을 가지며 공급전압(VDDA)이 높아지더라도 밴드갭 기준전압 발생기 회로의 동작에 영향을 미치지 않는 것을 모의실험을 통하여 확인하였고 $0.18{\mu}m$ tripple-well CMOS 공정을 이용하여 테스트 칩을 제작하고 측정하였다. 측정 된 기준전압 Vref는 평균값이 738mV이고 $3{\sigma}$는 29.88mV이다.

Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications

  • Chuan, M.W.;Lau, J.Y.;Wong, K.L.;Hamzah, A.;Alias, N.E.;Lim, C.S.;Tan, M.L.P
    • Advances in nano research
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    • 제10권5호
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    • pp.415-422
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    • 2021
  • Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi3NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi3NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi3NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

다중 마스킹과 무게중심법을 기반한 AGV용 가이드 센서 신호처리 (Signal Processing of Guide Sensor based on Multi-Masking and Center of Gravity Method for Automatic Guided Vehicle)

  • 이병로;이주원
    • 융합신호처리학회논문지
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    • 제22권2호
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    • pp.79-84
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    • 2021
  • AGV에서 가장 중요한 부품은 가이드 센서이며, 이 센서의 대표적인 기능은 정밀한 주행경로 추출이다. 가이드 센서의 정밀도에 낮거나 잘못된 주행 경로를 추출한다면 AGV가 충돌하거나 AGV 제어에서 좌·우 흔들림이 발생되어 적재물이 낙하, 주행경로 이탈 등의 문제가 발생한다. 이러한 문제점을 개선하기 위해 본 연구에서는 다중 마스킹과 무게중심법을 이용한 가이드센서 신호처리 기법을 제안하고 구현하여 그 성능을 평가하였다. 그 결과, 직진경로 및 좌/우 분기 경로 추출의 평균오차가 2.32[mm]를 보였으며, 특히 기존의 무게중심법 보다 27[%]이상의 성능개선을 보였다. 이와 같이 제안된 가이드 센서 신호 처리 기법을 적용한다면 AGV 자세 제어와 주행 안정성이 향상될 것으로 사료된다.

3차원 자세 추정을 위한 딥러닝 기반 이상치 검출 및 보정 기법 (Deep Learning-Based Outlier Detection and Correction for 3D Pose Estimation)

  • 주찬양;박지성;이동호
    • 정보처리학회논문지:소프트웨어 및 데이터공학
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    • 제11권10호
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    • pp.419-426
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    • 2022
  • 본 논문에서는 다양한 운동 모션에서 3차원 사람 자세 추정 모델의 정확도를 향상하는 방법을 제안한다. 기존의 사람 자세 추정 모델은 사람의 자세를 추정할 때 좌표 오차를 유발하는 흔들림, 반전, 교환, 오검출 등의 문제가 발생한다. 이러한 문제는 사람 자세 추정 모델의 정확한 자세 추정을 어렵게 한다. 이를 해결하기 위해 본 논문에서는 딥러닝 기반 이상치 검출 및 보정 방법을 제안한다. 딥러닝 기반의 이상치 검출 방법은 여러 모션에서 좌표의 이상치를 효과적으로 검출하고, 모션의 특징을 활용한 규칙 기반 보정 방법을 통해 이상치를 보정한다. 다양한 실험과 분석을 통하여 제안하는 방법이 골프 스윙 모션과 다양한 운동 모션에서도 사람의 자세를 정확히 추정할 수 있고, 3차원 좌표 데이터에서도 확장 가능함을 보인다.