• ETRI Journal
• /
• v.37 no.6
• /
• pp.1135-1142
• /
• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.660-666
• /
• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.6
• /
• pp.303-309
• /
• 2015

The construction process and safety management are an important means of the total projects for the decision-making. As an important management tool of cost, resources and risks of the project, the analysis and evaluations are recorded as an important asset of company. Also, it has become a safety device that could reduce risk factors repeatedly by the decision-making methods for the future similar projects. Component-based software, by reusing the useful part, which was prepared without newly developing all that, by building a new software product, the long-term continuous/steady through the provision of a component-based software, by securing a sales base, it should be the development and supply a wide range of applications. In this paper, we propose the construction process control systems for increasing modifiability of process creation and modification for business efficiency in accordance with the diverse trends in the construction process as a low-cost niche through a component-based software supplier to solve these problems.

• Proceedings of the KIEE Conference
• /
• 2001.10a
• /
• pp.349-353
• /
• 2001

Korea has a variety of favorable conditions for utilizing wind as energy. First of all, as a geographical characteristic, it is a peninsular country with its three frontiers surrounded by sea. Such a location makes the country influenced, all the year round, both by sea winds and by seasonal winds, so that it has a good possibility of putting its rich wind resources to use as an energy source. Particularly, in view of the results of observations and analysis of actual data about wind sources, it is quite possible to build wind paver plants in many regions across the country, such as inhabited islands dotted on its southern and western coasts around the Korean peninsular, a number of uninhabited islets attached the main islands, large-scaled reclaimed lands, and major inland areas. In Korea, the attempt to develop the technology of wind paver generation started in the 1970's. It was since 1988, when the Law on the promotion of Alternative Energy Development was enacted, that research and development activities for employing the wind force as a part of energy source have got into full swing. At that moment, however, due to the low level of domestic technological development, such efforts were mainly focused on the attainment of basic technologies with regard to wind power generation. Recently, there have been many noticeable changes in the international as well as domestic environments, such as the conclusion of the International Climate Treaty and the increase in public concerns of natural environment. It is quite possible to predict that the demand for wind paver generation will increase in the near future. Therefore, recognizing that wind, as a clean energy source, can be a promising method for coping with the International Climate Treaty and for replacing the fossil fuel, oil, this essay investigates the development history of wind paver generation systems and the status of technological development in Korea and presents an appropriate model for the development of the paver generation system that can compete with other energy sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.8
• /
• pp.469-473
• /
• 2017

We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.12
• /
• pp.1810-1814
• /
• 2017

This paper develops an approach to the algorithm of Gait pattern Analysis and step measurement with Multi-Pressure Sensors. The process of gait consists of 8 steps including stance and swing phase. As 3 parts of foot is supporting most of human weight, multiple pressure sensors are attached on the parts of foot: forefoot, big toe, heel. As 3 parts of foot is supporting most of human weight, multiple pressure sensors are attached on the parts of foot: forefoot, big toe, heel. normal gait proceed from heel, forefoot and big toe over time. While normal gait proceeds, values of heel, forefoot and big toe can be changed over time. So Each values of pressure sensors over time could discriminate whether it is normal or abnormal gait. Measuring Device consists of non-inverting amplifiers and low pass filter. Through timetable of values, normal gait pattern can be analyzed, because of supported weight of foot. Also, the peak value of pressure can judge whether it is walking or running. While people are running, insole of shoes is floating in the air on moment. Using this algorithm, gait analysis and step count can be measured.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.8
• /
• pp.1544-1551
• /
• 2007

A start-up circuit of the bandgap reference voltage generator of cascode current mirror type with wide operating voltage range and enhanced power-up characteristics is proposed in the paper. It is confirmed by simulation that the newly proposed start-up circuit does not affect the operation of the bandgap reference voltage generatory even though the supply voltage(VDDA) is higher and has more stable power-up characteristic than the conventional start-up circuit. Test chips are designed and fabricated with $0.18{\mu}m$ tripple well CMOS process and their test has been completed. The mean value of measured the reference voltage(Vref) is 738mV and The three sigma value($3{\sigma}$) is 29.88mV.

• Advances in nano research
• /
• v.10 no.5
• /
• pp.415-422
• /
• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Journal of the Institute of Convergence Signal Processing
• /
• v.22 no.2
• /
• pp.79-84
• /
• 2021

The most important device of the AGV is the guide sensor, and the typical function of this sensor is high accuracy and extraction of the road. If the accuracy of the guide sensor is low or the sensor device is extracted the wrong track, this causes the problems such as the AGV collision, track-out, the load falling due to AGV swing. In order to improve these problems, this study is proposed a signal processing method of the guide sensor based on multi-maskings and the center of gravity method, and evaluated its performance. As a result, the proposed method showed that the mean error of absolute value is 2.32[mm] and it showed performance improvement of 27[%] than the center of gravity method of existence. Therefore, when the proposed signal processing method is applied, It is thought that the posture control and driving stability of the AGV will be improved.

• KIPS Transactions on Software and Data Engineering
• /
• v.11 no.10
• /
• pp.419-426
• /
• 2022

In this paper, we propose a method to improve the accuracy of 3D human pose estimation model in various move motions. Existing human pose estimation models have some problems of jitter, inversion, swap, miss that cause miss coordinates when estimating human poses. These problems cause low accuracy of pose estimation models to detect exact coordinates of human poses. We propose a method that consists of detection and correction methods to handle with these problems. Deep learning-based outlier detection method detects outlier of human pose coordinates in move motion effectively and rule-based correction method corrects the outlier according to a simple rule. We have shown that the proposed method is effective in various motions with the experiments using 2D golf swing motion data and have shown the possibility of expansion from 2D to 3D coordinates.