• ETRI Journal
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• v.43 no.2
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• pp.197-208
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• 2021

Single-carrier frequency division multiple access (SC-FDMA) is currently being used in long-term evolution uplink communications owing to its low peak-to-average power ratio (PAPR). This study proposes a new transceiver design for an SC-FDMA system based on Walsh-Hadamard transform (WHT). The proposed WHT-based SC-FDMA system has low-PAPR and better bit-error rate (BER) performance compared with the conventional SC-FDMA system. The WHT-based SC-FDMA transmitter has the same complexity as that of discrete Fourier transform (DFT)-based transmitter, while the receiver's complexity is higher than that of the DFT-based receiver. The exponential companding technique is used to reduce its PAPR without degrading its BER. Moreover, the performances of different ordered WHT systems have been studied in additive white Gaussian noise and multipath fading environments. The proposed system has been verified experimentally by considering a real-time channel with the help of wireless open-access research platform hardware. The supremacy of the proposed transceiver is demonstrated based on simulated and experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.111-117
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• 2006

Reconfigurable CMOS low-noise amplifier (LAN) has been developed for multi-mode/multi-band wireless receiver. By employing common-gate input stage, the performance can be optimized for multiple operation bands by simply controlling the output load impedance. Although the conventional common-gate LAN has larger than 3dB noise figure (NF), the newly developed negative feedback scheme enables the common-gate input LNA to have less than 2dB NF. To have optimum linearity performance of wireless receiver, the gain of the LNA can be controlled. The LNA implemented in a 0.13mm CMOS technology shows $19{\sim}20dB$ voltage gain, $1.7{\sim}2.0dB$ NF, -2dBm iIP3 at $1.8{\sim}2.5GHz$ frequency range. The LNA dissipates 7mW from a 1.2V supply voltage.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.414-417
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• 2008

This paper presents the design and analysis of 2.45GHz Low-IF Mixer using CMOS 0.18um. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique, and the resonating technique for the tail capacitance. And the design of this Double Balance Mixer is based on its lineaity since it is important in the interference cancellation system. The low flicker noise mixer is implemented by incorporating a double balanced Gilber-type configuration, the RF leakage-less current bleeding technique, and Cp resonating technique. The proposed mixer has a simulated conversion gain of 16dB a simulated IIP3 of -3.3dBm and P1dB is -19dBm. A simulated noise figure of 6.9dB at l0MHz and a flicker corner frequency of 510kHz while consuming only 10.65mW od DC power. The layout of Mixer for one-chip design in a 0.18-um TSMC process has 0.474mm$\times$0.39 mm size.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1050-1058
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• 2005

This paper presents how to design and implement a very compact, cost effective and broad band receiver module for IEEE 802.16 FWA(Fixed Wireless Access) in the 40 GHz band. The presented receiver module is fabricated in a multi-layer LTCC(Low Temperature Cofired Ceramic) technology with cavity process to achieve excellent electrical performances. The receiver consists of two MMICs, low noise amplifier and sub-harmonic mixer, an embedded image rejection filter and an IF amplifier. CB-CPW, stripline, several bond wires and various transitions to connect each element are optimally designed to keep transmission loss low and module compact in size. The LTCC is composed of 6 layers of Dupont DP-943 with relative permittivity of 7.1. The thickness of each layer is 100 um. The implemented module is $20{\times}7.5{\times}1.5\;mm^3$ in size and shows an overall noise figure of 4.8 dB, an overall down conversion gain of 19.83 dB, input P1 dB of -22.8 dBm and image rejection value of 36.6 dBc. Furthermore, experimental results demonstrate that the receiver module is suitable for detection of Digital TV signal transmitted after up-conversion of $560\~590\;MHz$ band to 40 GHz.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.5
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• pp.388-396
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• 2019

This paper describes the RF(Radio Frequency) interference on the GNSS receiver due to the S-band signals transmitted from the transmitters in the Test Launch Vehicle, and analyzes the cause of the RF interference. Due to the S-band signals that have relatively high power levels compared with GNSS signals, an LNA(Low Noise Amplifier) in the active GNSS antenna was saturated, and the intermodulation signal within GNSS in-bands was produced in the LNA whenever two S-band signals were received from the GNSS antenna. For these reasons, the C/N0 of the satellite signals in the GNSS receiver was attenuated severely. The design of the LNA was changed in order to protect the RF interference due to the S-band signals and the suppression capability of the RF interference was confirmed in the new LNA through the comparison of the old LNA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.941-944
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• 2015

In this paper study for VSAT(very small aperture terminal) LNB(low noise block). ship LNB was demanded high stability and low noise figure. We designed FEM(Front-End Module) that was operated multi-band. FEM designed was constructed in a multi-band low noise receiver amplifier, a frequency converter, IF amplifier, Voltage Control Oscillator signal generating circuit four circuit using. To convert the multi-band 2.05GHz band, it generates four local oscillator signals, the four(band1, band2, band3, band4) designed to output an IF signal developed conversion apparatus, the conversion gain 64dB, noise figure 1dB or less, output P1dB 15dBm or more, phase noise showed -73dBc@100Hz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.190-195
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• 2000

This paper presents the fabrication of the LNA which is operating at 2.13∼2.16 GHz for IMT-2000 lot-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a transistor keep the low noise characteristics and drop the input reflection coefficient of amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network The amplifier consist of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using above design technique are presented more than 30 dB in gain P$\_$ldB/ 17 dB and less than 0.7 dB in noise figure, 1.5 in input$.$output SWR(Standing Wave Ratio).