• 전자공학회논문지
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• 제53권10호
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• pp.34-39
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• 2016

본 논문에서는 체내 이식용 신경 신호 기록 장치를 위한 저전압 저전력 아날로그 front-end 집적회로를 설계하였다. 제안된 집적 회로는 1 Hz에서 5 kHz 주파수 대역에 존재하는 신경 신호를 처리하기 위해 저잡음 neural 증폭기와 대역폭 조절이 가능한 능동 bandpass 필터로 구성되어 있다. Neural 증폭기는 우수한 잡음 특성을 위해 source-degenerated folded-cascode 연산증폭기를 기반으로 하여 설계하였고, 능동 필터의 경우 저전력의 current-mirror 연산증폭기를 이용하여 설계하였다. 능동 필터의 high-pass cutoff 주파수는 1 Hz에서 300 Hz까지 제어가 가능하며, low-pass cutoff 주파수는 300 Hz에서 8 kHz까지 제어가 가능하다. 전체 아날로그 front-end 회로는 53.1 dB의 전압 이득 성능과 1 Hz에서 10 kHz 대역에 대해서 $4.68{\mu}Vrms$의 입력 잡음 성능과 3.67의 noise efficiency factor 성능을 보인다. $18-{\mu}m$ CMOS 공정을 이용하여 설계를 하였고 1-V 전원에서 $3.2{\mu}W$의 전력 소모 성능을 갖는다. 칩 레이아웃 면적은 $0.19 mm^2$ 이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.435-438
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• 2002

A design of Ku-band(11.7~12.20Hz) monolithic microwave integrated circuit(MMIC) low noise block(LNB) downconverter using self oscillating mixer (SOM) for direct broadcast satellite(DBS) application is presented The proposed LNB downconverter is composed of low noise amplifier(LNA), image reject filter(IRF), SOM , low pass filter(LPF). The conversion gain is 30dB , VSn is less than 1.7: 1 and overall noise figure is less than 1.2dB.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.960-964
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• 2005

In this paper, we dealt with a partial discharge(PD) measurement method that has been accepted as an effective and non-destructive technique to estimate insulation performance of low-voltage electric and electronic devices. The PD measurement system Is composed of a coupling network, a low noise amplifier, and associated electronics. h shielded box Is adopted to make a better measurement environment against around noise. A low cut-off frequency of the coupling network estimated by a sinusoidal wave input was 125 kHz (-3 dB). Calibration tests on laboratory set-up have shown that the PD measurement system has a stable sensitivity of 10 mV/pC. In an application test oil a low-voltage three phase Induction motor (5 HP), we could detect 0.53 pC level of partial discharge at the applied voltage of AC 650 $V_{peak}$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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• pp.333-336
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• 2000

This paper describes a CMOS low noise amplifier (LNA) with bias current reusing architecture intended lot use in the front-end of IMT-2000 receiver. It has been implemented in a 0.35$\mu\textrm{m}$ CMOS process with two poly and four metal layers. In order to accuracy of simulation, we considered a bonding wire and a pad effect and used the measurements of capacitors and on-chip inductors which implemented in the same process. The LNA has a forward gain (S21) of 17 ㏈ and a noise fjgure of 1.26 ㏈. And it has a third-order intermodulation intercept point (IP3) of +3.15 ㏈m and a 1㏈ compression point (P1㏈) of -16 ㏈m, input referred, respectively. The power consumption is 19 ㎽ from a 3V supply.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.941-944
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• 2005

In this paper, the analysis of input power matching for CMOS RF Low Noise Amplifier (LNA) design is introduced. With two input power matching techniques, the performance of LNAs is estimated according to gain and noise figure. This process can be expressed easily by theoretical method and using simulation. These analytical methods are useful in that they can provide enough insights for designing CMOS RF LNAs.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.893-896
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• 2005

This paper describes Low Noise Amplifier(LNA) and Single Balanced Mixer(SBM) with monolithic image rejection notch filter using 0.5um MESFET process. LNA, Notch filter, and SBM were integrated on a chip. This chip does not need off chip SAW filter, thereby reducing the overall cost and system volume. The LNA with Notch filter provides a gain of 15dB, noise figure of 1.2dB, and image rejection ratio of -74dB. The SBM has a conversion gain of 6dB.

• 정보통신설비학회논문지
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• 제9권4호
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• pp.153-157
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• 2010

In this paper, a dual band LNA (Low Noise Amplifier) with a LC-tank matching circuit is designed for 912MHz and 2.45GHz RFID reader. The operating frequency is decided by the LC-tank resonance. The simulated results demonstrate that S21 parameter is 11.683dB and 5.748dB at 912MHz and 2.45GHz, respectively, and the S11 are -10.796dB and -21.261dB, the S22 are -7.131dB and -14.877dB at the same frequencies. The measured NF (Noise Figure) is 0.471 and 1.726 at 912MHz and 2.45GHz, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.191-194
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• 2000

A 2.4 GHz single ended two stage low noise amplifier(LNA) is designed for Bluetooth application. The circuit was implemented in a standard digital 0.25 $\mu\textrm{m}$ CMOS process with one poly and five metal layers. At 2.4 GHz, the LNA dissipates 34.5 mW from a 2.5V power supply voltage and provides 24.6 dB power gain, 2.85 dB minimum noise figure, -66.3 dB reverse isolation, and an output 1-dB compression level of 8.5 dBm.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.96-99
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• 2003

This paper presents the development of a Ku-band Low Noise Amplifier with the Noise figure of 1.4dBmax, the gain of 35dB, and the In/Out Return toss of -22dB/-18dB in the frequency range from 14 to 14.5GHz for Satellite transponders. All RF components were assembled using a hybrid technology with 15-mil thin-film substrates. The mechanical and thermal design of the housing was performed considering a vibration and a vacuum of space environment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.487-488
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• 1995

Broadband Microwave Low Noise Amplifier(LNA) is designed. The matching method using the broadband BPF(BandPass Filter) is introduced in this paper. This method is that the filter having the same reflection coefficient of Microwave GaAs FET in the desired bandwidth is located on the input stage of FET. The Simulated results is obtained that the $S_{21}$ and noise figure in 2.5GHz$\sim$9GHz, band are 8.5dB $\pm$ 1.5dB, 2.5dB $\pm$ 0.3dB respectively.