• International Journal of Safety
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• v.9 no.2
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• pp.1-5
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• 2010

In order to analyze the potential rise of ground surface of grounding grid installed in buildings, the grounding simulator has been designed and fabricated as substantial and economical measures. This paper describes the study of touch and step voltages with grounding grid where earth leakage current is injected. To assess risk voltage of grounding grid, the grounding simulator and CDEGS program were used to obtain measured data and theoretical results of this study. The grounding simulator was composed of an electrolytic tank, AC power supply, a movable potentiometer, and test grounding electrodes. The potential rise was measured by grounding simulator, and the touch and step voltages were computed by CDEGS program. As a consequence, the touch voltage and step voltage above the grounding grid were very low, but were significantly increased near the edge of grounding grid.

• Proceedings of the KIEE Conference
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• summer
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• pp.1166-1168
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• 2004

The high frequency series resonant converter has been widely used for the non-contact power supply system with the large air gap and the increased leakage inductance of the non-contact transformer. However. the high frequency series resonant converter has the disadvantages of high voltage gain characteristics in the overall load range due to the large air gap and the circulating magnetizing current. In this paper, unit voltage gain is revealed in the proposed three-level series-parallel resonant converter. The results are verified on the simulation results and the 5kW experimental prototype.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from 100 $\mu\textrm{m}$ to 150 $\mu\textrm{m}$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over 300$^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.505-509
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• 1997

Praseodymium-based ZnO varistor containing 2.0mol% and 4.0mol% $Y_2$O$_3$ were fabricated, respectively and its microstructure and electrical properties were investigated. Yttrium distributed nearly in the grain boundaries and cluster phase at nodal point but more in cluster phase. The average grain size of the 2.0%mol% and 4.0mol% $Y_2$O$_3$-added samples was 14.8${\mu}{\textrm}{m}$ and 8.6${\mu}{\textrm}{m}$, respectively. Compared to 2.0mol% $Y_2$O$_3$, 4.0mol% $Y_2$O$_3$-added varistors showed very good I-V characteristics exhibiting highly nonlinear exponent(87.4) and low leakage current(46.7nA). These results are the important experimental fact in this paper.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1283-1285
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• 1993

A new simulation method for a device including the Floated Field Plate(FFP) is proposed. The external resistance is connected with FFP in order to simulate FFP as a electrode. The numerical I-V characteristic obtained from MEDICI simulation shows fairly good results such as low leakage current and abrupt breakdown voltage curve. The convergence is improved conveniently compared with conventional method which utilize heavily-doped poly silicon as a electrode.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.3-5
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• 2002

Breakdown characteristics of a punch-through diode with n+p+p-n+ structure are analyzed with two-dimensional device simulation. Effects of base doping concentration and profile on the breakdown are presented. An analytical expression of a maximum base doping level for the punch-through breakdown is derived. The diode with a linearly graded base doping shows superior leakage current and capacitance is satisfactory for applications for low-voltage circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.224-227
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• 1999

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.433-436
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• 1999

In this paper we applied TVS(Triangular Voltage Sweep) method to calculate the mobile ionic charge densities in some ferroelectric thin films. During the measurement, the temperature of specimens were maintained at 20$0^{\circ}C$. By this method, the amount of mobile ionic charge Q$_{m}$ and mobile ionic charge density N$_{m}$ of a MFIS structure were calculated 3.5 [pC] and about 4.3$\times$10$^{11}$ [ions/cm$^2$], respectively. In order to successful TVS measurement, the gate leakage current density of films must be low 10$^{-9}$ (A/cm$^2$) order.der.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.556-557
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• 2005

The distribution facilities, such as suspension insulator, line post insulator, lightning arrester, COS, used for long periods in the industrial pollution area were investigated. The electrical test and the material analyses were performed on the polluted and non-polluted facilities. The low frequency dry flashover voltage of polluted suspension was decreased about 8% in comparison with non-polluted one. The polluted materials turned out with the iron which came from the foundries. The polluted materials turned out with the iron which came from the foundries. This conductive materials decreased the leakage distance, resulting in reducing of electrical properties.