• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Journal of the Korea institute for structural maintenance and inspection
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• v.6 no.3
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• pp.177-184
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• 2002

The most tunnel damage such as cracks or leakage which exist in tunnel lining commonly, is caused by the cavities where exist behind the tunnel lining, through the tunnel safety inspections. These cavities were analysed to affect a stability of a running-tunnel seriously. This study is on the development of the controlled low-strength and flowable filling material which is able to apply to the cavity behind the tunnel lining. The major materials of backfilling developed are a crushed sand and a stone-dust which exists as a cake-state and is a by-product obtained in the producting process of aggregate. It is conformed with the design standard to the physical characteristics of backfilling. The backfilling material developed is designed to reduce the fair amount of cement. According to the designed compound ratio, it is carried out the laboratory tests such as a compressive strength and a chemical analyses and is applied to dilapidated old tunnel for an application assessment.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.111-117
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• 2002

In this paper, we proposed calibration techniques to improve measurement accuracy in the characteristic analysis system for semiconductor devices. Systematic errors can be reduced using proposed calibration techniques. Also, error current reduction procedures including leakage current and offset current are proposed to measure low-level current in pA level. Calibration parameters are calculated and stored by microprocessor using least-square fitting with measured sample data. During measurement time microprocessor corrects measured data using stored calibration parameters. Experimental results show that current measurement error above nA level is less than 0.02%. And they also show that current measurement in pA level can be performed with about 0.2% accuracy.

• Journal of the Society of Naval Architects of Korea
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• v.52 no.3
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• pp.206-221
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• 2015

Supercavitation is a modern technique which can be used to surround an underwater vehicle with a bubble in order to reduce the resistance of the vehicle. When the vehicle is at low speed in the deep sea, the cavitation number is relatively big and it is difficult to generate a cavity large enough to envelope the vehicle. In this condition, the artificial cavity, called ventilated cavity, can be used to solve this problem by supplying gas into the cavity and can maintain supercavitating condition. In this paper, a relationship between the ventilation gas supply rate and the cavity shape is determined. Based on the relationship a ventilation rate control is developed to maintain the supercavitating state. The performance of the ventilation control is verified with a depth change control. In addition, dynamics modeling for the supercavitating vehicle is performed by defining forces and moments acting on the vehicle body in contact with water. Simulation results show that the ventilation control can maintain the supercavity of an underwater vehicle at low speed in the deep sea.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2005-2015
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• 2016

A high-step-up DC/DC converter for renewable energy systems is proposed. The proposed structure provides high voltage gain by using a coupled inductor without the need for high duty cycles and high turn ratios. The voltage gain is increased through capacitor-charging techniques. In the proposed converter, the energy of the leakage inductors of the coupled inductor is reused. This feature reduces the stress on the switch. Therefore, a switch with low ON-state resistance can be used in the proposed converter to reduce losses and increase efficiency. The main switch is placed in series with the source. Therefore, the converter can control the energy flow from the source to the load. The operating principle is discussed in detail, and a steady state analysis of the proposed converter is conducted. The performance of the proposed converter is verified by experimental results.

• Proceedings of the Safety Management and Science Conference
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• 2004.05a
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• pp.247-257
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• 2004

Electrodes were fabricated based on activated carbon powder BP-20, conducting agent such as Super P, vapor grown carbon fiber (VGCF) and acetylene black (AB), and the mixed binders of flexible poly(vinylidenefluoridehexafluoropropylene) [P(VdF-co-HFP)] and cross linking dispersion agent of polyvinylpyrrolidone (PVP) to increase mechanical strength. According to impedance measurement of the electrode with the addition of conducting agent, we found that it was possible to charge rapidly by the fast steady-state current convergence due to low equivalent series resistance (AC-ESR, fast charge transfer rate at interface between electrode and electrolyte and low RC time constant. The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. We found that the 2.3V/230F grade EDLC would be applied to industrial safety usage such as uninterrupted power supply (UPS) because of the constant DC-ESR by IR drop regardless of discharge current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.84-84
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• 2008

A multidimensional ZnO light-emitting diode LEDstructure comprising film/nanorods/substrate was fabricated on a p-type Si substrate using metal organic chemical vapor deposition at relatively low growth temperature. The filmlike top layer used for the metal contact was continuously formed on the ZnO nanorods by varying the growth conditions and the resulting structure allowed us to utilize the nanorods with intense emission as an active layer. We investigated the performance of the resulting multidimensional LED. An extremely high breakdown voltage and low reverse leakage current as well as typical rectification behavior were observed in the I-V characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.433-437
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• 2015

We have designed and fabricated a low power and high linearity up down convertor for wireless repeaters using $0.35{\mu}m$ SiGe Bipolar CMOS technology. Repeater is composed of a wideband up/down converting mixer, programmable gain amplifiers (PGA), input buffer, LO buffer, filter driver amplifier and integer-N phase locked loop (PLL). As of the measurement results, OIP3 of the down conversion mixer and up conversion mixer are 32 dBm and 17.8 dBm, respectively. The total dynamic gain range is 31 dB with 1 dB gain step resolution. The adjacent channel leakage ratio (ACLR) is 59.9 dBc. The total power consumption is 240 mA at 3.3 V.

• Journal of Power Electronics
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• v.6 no.1
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• pp.45-51
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• 2006

A new high efficiency phase shifted full bridge (PSFB) converter for the power sustaining module of a plasma display panel (PDP) is proposed in this paper. The proposed converter employs a voltage doubler rectifier without an output inductor. Since it has no output inductor, the voltage stresses of the secondary rectifier diodes can be clamped at the output voltage level. No dissipative resistor-capacitor (RC) snubber for rectifier diodes is needed. Therefore, high efficiency, as well as, a low noise output voltage can be realized. Due to the elimination of the large output inductor, it features a simple structure, lower cost, smaller mass and lighter weight. Furthermore, the proposed converter has wide zero voltage switching (ZVS) ranges with low current stresses of the primary switches. Also the resonance between the leakage inductor of the transformer and the capacitor of the voltage doubler cell reduces the current stresses of the rectifier diodes. In this paper, operational principles, an analysis of the proposed converter and experimental results are presented.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.367-370
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• 2004

We fabricated SiGe BiCMOS devices, which are important for ultra high speed RF IC chips, by employing $0.35\mu{m}$ CMOS process. To meet with the requirement of low noise level with linear base leakage current at low VBE region, we try to minimize polysilicon/ silicon interface traps by optimizing capping silicon thickness and EDR(emitter drive-in RTA) temperature. We employed $200\AA$and $300\AA$-thick capping silicon, and varied the EDR process condition at temperature of $900-1000^\circ{C}$, and time of 0-30 sec at a given capping silicon thickness. We investigated current gain behavior at each process condition. We suggest that optimum EDR process condition would be $975^\circ{C}$-30 sec with $300\AA$-thick capping silicon for proposed $0.35\mu{m}$-SiGe HBT devices.