• 한국산업정보학회논문지
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• 제18권5호
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• pp.59-65
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• 2013

저전력 설계를 요구하는 디지털 시스템에서는 동적 전력(dynamic power)과 누설 전력(leakage power) 사이의 균형을 이루는 점에 근접하는 매우 낮은 전압에서 작동하는 디지털 설계 방식을 요구하지만, 기존의 동기방식의 회로는 낮은 전압에서 지연(delay)이 급격히 증가하여 시스템의 전체 성능을 유지할 수 없을 뿐만 아니라, 공정, 전압, 온도 변이 (PVT variation) 등에 크게 영향을 받아서 올바른 동작을 기대할 수 없다. 따라서 본 논문에서는 낮은 전압에서 여러 가지 변이들에 영향을 받지 않는 비동기회로 설계 방식 중에 타이밍 분석이 요구되지 않고, 설계가 간단한 NCL (Null Convention Logic) 방식을 사용한 저전력 산술논리 연산장치 (ALU) 회로를 매그나칩-SK하이닉스 0.18um 공정으로 설계하고, 기존의 파이프라인 방식의 ALU와 스피드와 전력에 관해서 비교하였다.

• 제어로봇시스템학회논문지
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• 제10권3호
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• pp.286-293
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• 2004

This paper presents the result of a study on the starter control for a turbo generator. Because a starter in gear box type turbo-generator system is composed of gearbox and brush DC motor, it should be replaced with High Speed Generator(HSG)) in HSG type Turbo-generator. There-ore, it is necessary to design a new starting algorithm and starter. In gearbox type system, brush DC motor is rotated to the designed speed using low voltage-high current battery power. After brush DC motor speed is increased to several times by gearbox, gas turbine engine can be rotated to designed starting speed. If we implement a starter with High Speed Generator(HSG), it is necessary to drive high-speed generator to high-speed motor. High-speed generator with permanent magnet on rotor has a low leakage inductance fur driving high-speed rotation, and it is necessary high DC link voltage for inverter when High-speed generator is driven to high speed. This paper presents result of development of the boost converter for converting high voltage DC from low battery voltage and design of the inverter for controlling a high frequency current to be injected to motor winding. Also, we show performance of the designed starter by driving the turbo generator.

• 디지털융복합연구
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• 제10권10호
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• pp.313-318
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• 2012

본 논문에서는 X-band 대역용 인체감지센서에 적용될 저 잡음 송수신기 설계 방법을 제안 하였다. 제안된 송수신기에는 기존 송수신기의 출력 신호가 수신 단으로 유입되는 것을 줄이기 위한 회로가 추가되었다. 잡음 제거회로는 분배기와 $90^{\circ}$위상 천이기를 포함하는 Hittite HMC908LC5(I/Q down converter)가 사용되었다. 송수신기 회로와 안테나는 CST MWS를 사용하여 시뮬레이션 하였고 FR-4 기판(h=1.0mm, ${\varepsilon}_r$=4.4)을 사용하여 제작하였다. 설계된 안테나의 특성이 인체감지용 센서에 사용되기에 적합하며 제안된 송수신기와 기존에 사용되고 있는 송수신기의 출력 특성을 비교 한 결과 동등한 특성을 얻었다.

• 전력전자학회논문지
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• 제21권4호
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• pp.351-355
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• 2016

Welding machines are high-capacity systems used in a low-frequency range using IGBT. As their system is similar to a large transformer, most welding machines suffer a great loss because of hard switching and vast leakage inductance. A voltage-balancing circuit is designed to overcome these shortcomings. This circuit can reduce the transformer size by making it into a high frequency and reducing the input voltage by half and by adopting a serial structure that connects two full-bridges in a series to use a MOSFET with a good property at high frequency. In addition, a Schottky diode is used in the primary rectifier to overcome the low efficiency of most welding machines. To use the Schottky diode with a reliably relatively low withstanding voltage, an active snubber is adopted to effectively limit the ringing voltage of the diode cut-off voltage.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국화재소방학회논문지
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• 제17권2호
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• pp.1-5
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• 2003

현재 고감도의 누전차단기(RCD)와 배선용차단기(WCCB)및 퓨즈(Fuse)설치를 통하여 누전·단락사고와 과전류 발생시 차단기능을 부여함으로써, 전기화재의 발생을 억제하고 있으나, 매우 미흡한 실정이다. 특히 소손사고와 접속·접촉불량사고 및 순간단락사고 발생시는 구조적으로 차단이 불가능할 것으로 사료되며, 이에 대한 연구가 필요하다. 따라서 본 논문에서는 상기의 상황에 기초해서 가장 일반적으로 사용되고 있는 열동형 누전차단기(단락보호, 과부하 겸용)의 동작원리와 시험항목 및 기준분석을 통하여 문제점을 제시하고자 한다. 또한 저압 배선선로의 소손사고와 접속·접촉불량사고 및 순간단락사고 발생시 전등(R)부하 및 전동기(R-L)부하에 따른 누전차단기의 동작특성을 실제 실험을 통하여 검토하고자 한다.

• 한국가스학회지
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• 제9권3호
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• pp.32-37
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• 2005

LP가스나 도시가스시설의 저압 호스 체결에서 견고함과 기밀성을 높이기 위해 호스밴드를 사용한다. 본 연구에서는 호스밴드의 성능 파악과 안전한 체결 거리의 제시를 위하여 호스밴드에 대한 내압강도와 당김력을 측정하였다. 호스밴드의 체결력은 스프링밴드 보다는 귀형밴드에서 높게 나타났으며 최적의 호스밴드 체결거리는 호스접속 끝단부로부터 1${\~}$2 mm일 때에 우수한 것으로 파악되었다.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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• pp.341-345
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• 2004

A high efficiency and low device stress voltage and current clamping BVS PWM asymmetrical half bridge converter is proposed in this paper. To achieve the ZVS of power switches along the wide load range, the transformer leakage inductor $L_{Ikg}$ is increased. Then, to solve the problem related to ringing in the secondary rectifier caused by the resonance between $L_{Ikg}$ and rectifier junction capacitors, the proposed converter employs a voltage and current clamping cell, which helps voltages and currents of rectifier diodes to be clamped at the output voltage and output current, respectively. Therefore, no RC-snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. In addition, since all energy stored in $L_{Ikg}$ is transferred to the output side, the circulating energy problem can be effectively solved and duty loss does net exist. The operational principle, theoretical analysis, and design considerations are presented. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 425W, 385-170Vdc prototype are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.