• Economic and Environmental Geology
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• v.46 no.2
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• pp.105-121
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• 2013

This study introduces integrated approach on detection of a leakage in a sea wall based on remote sensing, electric resistivity survey, electromagnetic survey, and borehole survey for the Seosan A-Region sea wall. The satellite temperature distribution from Landsat ETM+ data identifies water leakage distribution and period by analyzing temperature mixing patterns between sea water and fresh water. Electric resistivity survey provides both horizontal and vertical anomaly distributions over the sea wall showing below average electric resistivity. Electromagnetic survey(electrical conductivity survey) reveals the potential possible leakage areas with minimal background impact by comparing electrical conductivity values between high and low tides. Borehole image processing system confirmed the locations of anomalies identified from the other survey methods and distributions of vertical fracture zones. The integrated approach identified 41.7% of the sea wall being the most probable area vulnerable to water leakage and effectively approximated both horizontal and vertical distribution of water leakage. The integrated analysis of remote sensing, electric resistivity survey, electromagnetic survey and borehole survey is considered to be an optimal method in identifying water leakage distribution, period, and extent of fractures knowledged from the boreholes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Korean Geotechnical Society
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• v.38 no.3
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• pp.17-26
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• 2022

Domestic district heating system needs safety management guidelines using the change of surface temperature to detect damages to buried heat pipes. This paper performed numerical analyses on the temperature change of ground surface due to the burial and leakage of heat pipes. Temperature difference between the ground surface above the buried heat pipes and the surrounding surface rises to a crescendo between 3 am and 8 am. It is more significant in winter rather than in summer. Low groundwater level magnifies the temperature increase of the ground surface by the heat pipe, which is smaller in the asphalt pavement than in the bare soil. Without leakage of the buried heat pipe, the temperature increment on the ground surface by the heat pipe is within 3.0℃ in the bare soil and 3.5℃ in the asphalt pavement. Leakage of the supply heat pipe in the bare soil increases the temperature on the ground surface gradually in the summer but rapidly in the winter. Asphalt pavement shows a lower increment and increasing rate of the temperature on the ground surface due to pipe leakage than bare soil surface. And leakage on both sides of the supply pipe takes 1-2 days for the temperature difference from the surrounding soil surface to reach 10℃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.428-435
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• 1998

SOI-like-bulk CMOS device is proposed, which having the advantages of SOI(Silicon On Insulator) and protects short channel effects efficiently with adding partial epitaxial process at standard CMOS process. SOI-like-bulk NMOS and PMOS with 0.25${\mu}{\textrm}{m}$ gate length have designed and optimized through analyzing the characteristics of these devices and applying again to the design of processes. The threshold voltages of the designed NMOS and PMOS are 0.3[V], -0.35[V] respectively and those have shown the stable characteristics under 1.5[V] gate and drain voltages. The leakage current of typical bulk-CMOS increase with shortening the channel length, but the proposed structures on this a study reduce the leakage current and improve the subthreshold characteristics at the same time. In addition, subthreshold swing value, S is 70.91[mV/decade] in SOI-like-bulk NMOS and 63.37[mV/ decade] SOI-like-bulk PMOS. And the characteristics of SOI-like-bulk CMOS are better than those of standard bulk CMOS. To validate the circuit application, CMOS inverter circuit has designed and transient & DC transfer characteristics are analyzed with mixed mode simulation.

• Tribology and Lubricants
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• v.20 no.2
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• pp.68-76
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• 2004

Applying a general Galerkin FE lubrication analysis method to spiral groove dry gas seals, this study intends to analyze in detail the effects of groove design parameters, such as a spiral angle, groove width ratio, groove radius ratio, groove depth ratio, and groove taper ratio, on the lubrication performances of an opening force, leakage, axial stiffness and damping, and angular stiffness and damping at low and high rotating speeds: 3,600 and 15,000 nm. Results show that, for the primary design consideration performances such as the opening force and axial and angular stiffnesses, a spiral angle of $25^{\circ}$, a groove width ratio of 0.46, a groove radius ratio of 1.1, a groove depth ratio of 1.0, and a groove taper ratio of 0.0 are preferred. Where the recommended relatively low values of groove depth and taper ratios are to keep the axial and angular dampings positive or higher than 0 particularly at the high rotating speed.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.1
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• pp.33-39
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• 2005

Comparing with the conventional transformer without the air gap, a contactless transformer with the large air gap between the long primary winding and the secondary winding has increased leakage inductance and reduced magnetizing inductance. For transferring the primary power to the secondary one, the high frequency series resonant converter has been widely used for the contactless power supply system with the large air gap and the increased leakage inductance of the contactless transformer However, the high frequency series resonant converter has the disadvantages of the low efficiency and high voltage gain characteristics in the overall load range due to the large air gap and the circulating magnetizing current. In this paper, the characteristics of the high efficiency and unit voltage gain are revealed in the proposed three-level series-parallel resonant converter. The results are verified on the simulation based on the theoretical analysis and the 5kW experimental prototype.

• Fire Science and Engineering
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• v.18 no.3
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• pp.103-107
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• 2004

Recently. the spark and the overheat due to in the conductor breaks have been the major causes of electrical fire in low voltage wiring. Also, because in these cases the current is a surge one, the losses and faults of a communication, a home appliances, a computer and a measuring instrument may occur. Especially, in such cases, we are very difficult to detect the condition of the conductor breaks. In this paper, we have developed an auxiliary control device, the electrical fire prevention control device (EFPCD), of an earth leakage breaker (ELB). And we can prevent the electrical fire caused by the spark and the overheat occurring in the conductor breaks with the EFPCD.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

• Journal of electromagnetic engineering and science
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• v.7 no.4
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• pp.147-153
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• 2007

This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect. The high power amplifier is implemented using a 90-W peak envelope power(PEP) LDMOSFET at 2.14-GHz and an envelope short matching topology is applied at the active ports to minimize the memory effect. The analog predistortion circuit comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently. The predistortion circuit is tested for two-tone and wide-band code division multiple access(WCDMA) 4FA signals. For the WCDMA signal, the adjacent channel leakage ratios(ACLRs) at 5 MHz offset are improved by 12.4 dB at average output powers of 36 dBm and 42 dBm.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2102-2103
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• 2008

The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The occurrence factor of the fire is electric arc or spark accompanied with electrical faults. Residual Current Protective Device(RCD) of high sensitivity type used at low voltage wiring cuts off earth leakage and overload, but the RCD can't cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied low voltage distribution panel are prescribed to rated breaking time about 30[ms](KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To be improved on such problem, this paper is proposed to a electrical fire disaster prevention device(EFDPD) for a RCD trip or a self circuit-breaking function on electric arc or spark due to electrical fire. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.