• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1558-1564
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• 2004

This paper shows the design of Active antenna which appled to 5.5GHz RF module for local wireless communication system. The LNA, which was designed Super low noise HJ FET of NE3210S01, is used to obtain a good noise figure characteristics. And the microstrip patch antenna was designed to obtain omnidirectional antenna characteristics. The measured LNA gain is 15 dB, input & output return loss is under -20 dB and VSWR under 1.5. The Single microstrip patch antenna input return loss is under -29 45, VSWR under 1.2.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.709-715
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• 2002

In this paper, a novel low profile dual feeding microstrip antennas with microstrip and H-shaped aperture feeding are proposed to achieve high isolation and easy feeding, and the validity of the proposed antennas is demonstrated experimentally. In the proposed single and 1$\times$4 array antenna, the measured isolations are less than -49 dB and -48 dB, impedance bandwidths are 4 % at 12.5 GHz and 2.1 % at 14.25 GHz for the VSWR<1.5 in both antennas and maximum gains are 8.25 dBi and 14.2 dBi.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.381-384
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• 2000

In this paper, we designed and fabricated a low noise amplifier which can be used in W-CDMA. For improving input VSWR and stability an emitter inductance series feedback was used, and for acquiring higer linearity at low current DC bais by-passing method was used. Fabricated low noise amplifier had 15.33 ㏈ power gain, 2.17 ㏈ NF, -9.53 ㏈ $S_{11}$ and -35.91 ㏈ $S_{22}$ at 2.16 GHz, and +5.34 ㏈m II $P_{ 3}$ at 10 MHz channel spacing.g.g.g.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.1 s.6
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• pp.89-95
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• 2005

In this paper, a quad-band antenna for GSM/GPS/DCS/US-PCS handsets is proposed. The proposed antenna is low-profile for mounting in limited inner space of a handset. It consists of three open points with quarter wave length for multi-band operation. The ground plane below the patch is removed for wide-bandwidth without the variation of antenna size and the slot is added at the center of the patch for convenient matching in high frequency band. It provides a enough bandwidth within VSWR 3:1 at all bands. In addition, the measured peak gains are between -2.19 and 2.09 in anechoic chamber (10m$\times$6m$\times$4m).

• Journal of the Korea Society of Computer and Information
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• v.5 no.2
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• pp.115-120
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• 2000

This papers describes two low-noise amplifiers that use the Hewlett-Packard ATF-10236 low noise GaAs FET device, The actual measured performance of the amplifiers compares favorably to that predicted by the computer simulation(ADS) the noise figure of the 1575MHz amplifier was measured at 1.78dB which is lower that 2dB as specified. Measurement gam measured 33.0075dB which is within 35dB$\pm$0.5㏈ of the GPS specification. Network Analyzer(HP8510) is used to measure all the s-parameters and Noise Figure meter(HP8970B) is used to measure noise figure. As the result of experiment, gain, input VSWR, output VSWR is within the GPS specification sufficiently.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.920-927
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• 1994

A development of an efficient 14.0~14.5GHz 3 Watt SSPA is described in this paper, which is applicable to the very small aperture terminal(VSAT) for bidirectional data and voice signal transmission in low cost and with small size. The SSPA consists of two stages of low noise amplifiers using the low noise GaAs FETs. two stages of medium power amplifiers using the medium power GaAs FETs, and three stages of power amplifiers including a balanced amplifier using an internally matched power GaAs FET. The achieved with this seven stage amplifiers are 42dB signal power gain, 7dB noise figure, 35dBm output power at 1dB gain compression point and 2.0 and 1.5 input and output VSWR respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3201-3206
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• 2012

In this paper, the simplified design methodology for rotation of polarization plane using a square waveguide is proposed. In order to optimize the characteristics of $180^{\circ}$ polarizer operating from 14.3GHz to 14.8GHz in Ku-band, the modified mode matching method and piecewise power tower interpolation are applied to the polarizer design. The optimized results show that the frequency bandwidth in VSWR<2 has covered 500MHz in the Ku-band and phase difference between two orthogonal modes $TE_{10}$and $TE_{01}$ is $180^{\circ}{\pm}1^{\circ}$ in the range of 14.3GHz~14.8GHz. The cross polarization loss has obtained below 40dB and the insertion loss has 0.1dB in the passband. Therefore, the proposed polarizer is suitable for practical Ku-band system requiring the low VSWR and compact size.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.354-357
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• 2003

The low noise and balanced amlifier has been designed by using PBG. Usually balanced LNAis used to matching the input and output mismatching that caused by matching the low noise matching point. And the PBG supresses the harmoincs. This paper proposed balanced LNA by using PBG. And this configuration improve the performance - noise figure, VSWR.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.3
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• pp.591-596
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• 2001

In recent years, interest in microstrip antenna has been increasing, primarily because of their low profile, and light weight and relative cheapness. In this paper we present a theoretical analysis of the circular Patch array antenna. The theory is based on cavity model analysis. The calculated results are compared with experimental results showing good agreement. A $8\times8$ array antenna at 12GHz frequency band is designed and tested. The experimental results of relatively good characteristics show that its maximum rain is 24.8(dB), and its impedance bandwidth is 120MHz$(VSWR\leq2)$.