• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.12 no.5
• /
• pp.1-8
• /
• 2013

Roll-based, nanoimprint lithography (Roll-NIL) is one effective method to produce large-area nanopatterns continuously. Systems and processes for Roll-NIL have been developed and studied for more than 15 years. Since the shapes of the stamp and the substrate for Roll-NIL can be plates, films, and rolls, there exist many concepts to design and implement roll-NIL systems. Combinations and variations of contact-methods for variously shaped stamps and substrates are analyzed in this paper. The contact-area can be changed by using soft materials such as polydimethylsiloxane (PDMS) or silicone rubber. Ultraviolet (UV) sources appropriate for the roll-to-plate or roll-to-roll process are introduced. Finally, two roll-to-plate nanoimprint lithography systems are illustrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.342-345
• /
• 2002

As the size of chip components and module decreases, new patteming method for fine line and geometry is needed. So far, in LTCC(Low Temperature Cofired Ceramic) process, screen printing method has been used generally. But screen printing method has some disadvantages as follows. First, the geometry including line, vias, etc. smaller than $100{\mu}m$ can't be evaluated easily. Second, the patterned dimension is different from designed value, which makes distortion in charactersitics of not only chip components but also modules. Thick film lithography has advantages of thick film screen printing process, low cost and thin film process, fine line feasibility. Using this method, the line with $30{\mu}m$ width and the geometry with expected dimension can be evaluated. In this study, the fine line with $35{\mu}m$ line/space is formed and the embedded capacitor with very small tolerance is developed using thick film lithography.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.332-336
• /
• 2007

Temperature is an essential process variable in nanoimprint lithography(NIL) where the temperature varies between room temperature and above the glass transition temperature. To simulate NIL process, we employ both the Nose-Poincare method for temperature controlled molecular dynamics(MD) and force field for polymer material i.e. polymethyl methacrylate(PMMA), which is most widely selected as NIL resist. Nose-Poincare method, which convinces the conservation of Hamiltonian structure and time-reversal symmetry, overcomes the drawbacks inherent in the conventional methods such as Nose thermostat and Nose-Hoover thermostat. Thus, this method exhibits enhanced numerical stability even when the temperature fluctuation is large. To describe PMMA, we adopt the force field which account for bond stretch, bending, torsion, inversion, partial charge, and van der Waals energy.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1934-1938
• /
• 2008

Formation of air bubble is the one of common defects in UV nano imprint lithography. Location of dispensing and volume of droplets are among the most important parameters in the process. ]n this study, UV curable resin droplets with different volumes were dispensed at different locations and pressed to investigate air bubble formation. By varying volume of droplet and dispensing location, process conditions were found for minimum air bubble area.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.61-69
• /
• 2014

With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.

• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.3
• /
• pp.269-275
• /
• 2014

Conventional machining technologies such as a milling process have limitations in accuracy to fabricate microstructures. Deep X-ray lithography using the synchrotron radiation is a promising micromachining process with an excellent accuracy, whereas there are difficulties in the fabrication of multi-layered structures. Therefore, it is mainly used for fabricating simple mono-layered microstructures with a high aspect ratio. In this study, a novel technology for fabricating multi-layered microstructures is proposed by combining two processes. In advance, an X-ray resist material is cut and machined into various shapes and heights by the micro milling process. Subsequent X-ray irradiation process facilitates the fabrication of multi-layered microstructures. The proposed technology can overcome the limitation of the pattern accuracy in conventional milling process and the difficulty of the multi-layered machining in x-ray process. The usefulness of the proposed technology is demonstrated in this study by applying the technique in the realization of various multi-layered microstructures.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.11 s.188
• /
• pp.34-41
• /
• 2006

Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100nm width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. $Moir\'{e}$ has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a $moir\'{e}$ fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of $moir\'{e}$ which can be obtained in nanoimprint process atmosphere from normal one.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.777-780
• /
• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.12 s.189
• /
• pp.128-134
• /
• 2006

Two-dimensional nano-patterns are fabricated using immersion holographic lithography. The photoresist layer is exposed to an interference pattern generated by two incident laser beams($\lambda$=441.6 nm, He-Cd laser) of which the pitch size is less than 200 nm. Good surface profiles of the 2 dimensional patterns are achieved by trimming the lithography process parameters, such as, exposure time, developing time and refractive index of medium liquid.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.393-393
• /
• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.