• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.919-920
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.357-358
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.127-128
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• 2008

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1253-1256
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• 2005

We have developed an electron lithography method, Electron Emission Lithography (EEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MIM technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 10 um in a system capable of 100 m resolution. Further improvements in resolution to 50 nm are possible.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.11 s.188
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• pp.34-41
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• 2006

Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100nm width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. $Moir\'{e}$ has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a $moir\'{e}$ fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of $moir\'{e}$ which can be obtained in nanoimprint process atmosphere from normal one.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1489-1492
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• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.890-893
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• 2004

The ultra precision machining in industrial field are increased day by day. The diamond turning has been used generally, but now is faced with limitation of use, because of higher requirement of production field. The electron beam lithography is alternative in machining area as semiconductor production. For EB lithography, 5 axis vacuum stage is required to duplicate small and large patterns on wafer. The stage is composed of 2 rotational axis and 3 translational axis with 5 DC servo motors. The positioning repeatability and resolution of Z axis feed unit are 3.21$\mu$m and 0.5 $\mu$m/step enough to apply to lithography.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.