Journal of the Korean Society of Manufacturing Technology Engineers (한국생산제조학회지)

The Korean Society of Manufacturing Technology Engineers (한국생산제조학회)
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Nanomachining on Single Crystal Silicon Wafer by Ultra Short Pulse Electrochemical Oxidation based on Non-contact Scanning Probe Lithography

비접촉 SPL기법을 이용한 단결정 실리콘 웨이퍼 표면의 극초단파 펄스 전기화학 초정밀 나노가공

  • 이정민 (조선대학교 일반대학원 첨단부품소재공학과(정밀기계설계공학)) ;
  • 김선호 (조선대학교 일반대학원 첨단부품소재공학과(정밀기계설계공학)) ;
  • 김택현 (조선대학교 기계설계공학과) ;
  • 박정우 (조선대학교 기계설계공학과)
  • Received : 2011.05.04
  • Accepted : 2011.07.20
  • Published : 2011.08.15
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Abstract

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

Keywords

References

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