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Nanomachining on Single Crystal Silicon Wafer by Ultra Short Pulse Electrochemical Oxidation based on Non-contact Scanning Probe Lithography  

Lee, Jeong-Min (조선대학교 일반대학원 첨단부품소재공학과(정밀기계설계공학))
Kim, Sun-Ho (조선대학교 일반대학원 첨단부품소재공학과(정밀기계설계공학))
Kim, Tack-Hyun (조선대학교 기계설계공학과)
Park, Jeong-Woo (조선대학교 기계설계공학과)
Publication Information
Journal of the Korean Society of Manufacturing Technology Engineers / v.20, no.4, 2011 , pp. 395-400 More about this Journal
Abstract
Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.
Keywords
Atomic force microscope; Oxidation; Silicon oxide; Electrochemical process; Pulse;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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