• Journal of Biomedical Engineering Research
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• v.22 no.3
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• pp.241-247
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• 2001

ABR(auditory brainstem response) is one of the audiometry which measures objective hearing threshold level by acquiring electric evoked potentials emanated from auditory nerve system responding to an auditory stimulation. However, the obtained potentials which are largely interfered by power line noise, have extremely low SNR, thus ensemble average algorithm is generally used. The purpose of this study was to investigate the effect of iteration number in ensemble average on the reduction of the power line noise. The power line noise was modeled to be a 60 Hz sinusoidal signal and the energy of the modeled signal was calculated when it was averaged. It was verified by simulation that the energy had the periodic zero points for each stimulation rate, and 60 Hz signal induced by the power line was applied to the developed ABR system to confirm that the period of zero energy point was the same with that of the simulation. By the properly selected iteration number, power line noise could be reduced and more reliable ABR could be acquired.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.719-723
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• 1997

The welding automation in ship manufacturing process,especially in the sub-assembly line is considered to be a difficult job because the welding part is too huge, various, unstructured for a welding robot to weld fully automatically. The weld orocess at the sub-assembly line for ship manufacturing is to joint the various stiffener on the base panel. In order to realize automatic robot weld in sub-assembly line, robot have to equip with the sensing system to recognize the position of the parts. In this research,we developed a vision system to detect the position of base panle for sub-assembly line is shipbuilding process. The vision system is composed of one CCD camera attached on the base of robot, 2-500W halogen lamps for active illumination. In the image processing algorithm,the base panel is represented by two set of lines located at its two corner through hough transform. However, the various noise line caused by highlight,scratches and stiffener,roller in conveyor, and so on is contained in the captured image, this nosie can be eliminated by region segmentation and threshold in hough transform domain. The matching process to recognize the position of weld panel is executed by finding patterns in the Hough transformed domain. The sets of experiments performed in the sub-assembly line show the effectiveness of the proposed algorithm.

• The KIPS Transactions:PartA
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• v.17A no.4
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• pp.189-196
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• 2010

This paper presents an improved marker detection algorithm using hybrid features such as corner, line segment, region, and adaptive threshold values, etc. In usual augmented reality environments, there are often marker occlusion and poor illumination. However, existing ARToolkit fails to recognize the marker in these situations, especially, partial concealment of marker by user, large change of illumination and dim circumstances. In order to solve these problems, the adaptive threshold technique is adopted to extract a marker region and a corner extraction method based on line segments is presented against marker occlusions. In addition, a compensating method, corresponding the marker size and center between registered and extracted one, is proposed to increase the template matching efficiency, because the inside marker size of warped images is slightly distorted due to the movement of corner and warping. Therefore, experimental results showed that the proposed algorithm can robustly detect the marker in severe illumination change and occlusion environment and use similar markers because the matching efficiency was increased almost 30%.

• International Journal of Highway Engineering
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• v.18 no.4
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• pp.69-75
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• 2016

PURPOSES : In this study, we evaluated changes in the retroreflectivity and luminance of phosphorescent road line markings with changes in glass beads and line marking thickness. METHODS : The color of line markings affects their retroreflectivity. Using a chromaticity test, we conducted the analysis of whether phosphorescent road line markings adhered to the "KS M 6080" standard. Then, we measured the dry retroreflectivity and wet retroreflectivity for various glass bead refractive indices. We conducted wet retroreflectivity test using the EN 1436 standard as the basis. We also conducted luminance tests for different glass bead refractive indices and line marking thicknesses. RESULTS : 1. Phosphorescent road line markings specimens satisfied the "KS M 6080" standard. 2. In dry retroreflectivity test, phosphorescent road line markings sprayed with glass beads satisfied the national police agency standard ($240mcd/(m^2{\cdot}Lux)$). Wet retroreflectivity test results showed that except for one type of No.1 glass beads, phosphorescent road line markings specimens sprayed with glass beads of one type of No.3 and two types of No.1 satisfied the national police agency standard ($100mcd/(m^2{\cdot}Lux)$). 3. Phosphorescent road line markings had higher retroreflectivity than non-phosphorescent road line markings in the dry condition. 4. Phosphorescent road line markings sprayed with glass beads demonstrated improved luminance. Luminance increased with higher glass bead refractive index and with increased line marking thickness. However, when the thickness crossed a certain threshold, phosphorescence ceased to increase; this is a characteristic of the phosphorescence phenomenon. CONCLUSIONS : Visibility across short distances can be ensured when phosphorescent road line markings are sprayed with glass beads, because of the retroreflection phenomenon. It is also possible to ensure far visibility using phosphorescent road line markings.

• Journal of IKEEE
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• v.28 no.1
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• pp.110-115
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• 2024

This paper analyzed the V_th (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced V_th variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the V_th decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by V_fe proportional to the channel radius, leads to a greater reduction in V_th in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in V_th compared to the O/N/O structure, resulting in larger V_th variations with increasing tapering angles.

• Journal of Animal Science and Technology
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• v.44 no.1
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• pp.31-38
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• 2002

Interval mapping using microsatellite markers was employed to detect quantitative trait loci (QTL) in the experimental cross between Berkshire and Yorkshire pigs. In order to derive critical values (CV) for test statistics for declaring significance of QTL, permutation test (PT) of Churchill and Doerge method(1994) and the analytical method(LK) of Lander and Kruglyak(1995) were used by each trait and chromosome. 525 $F_2$ progeny phenotypes of five traits(carcass weight, loin eye area, marbling score, cholesterol content, last back fat thickness) and genotypes of 125 markers covering the genome were used. Data were analyzed by line cross regression interval mapping with an F-test every by 1cM. PT CV were based on 10,000 permutations. CV at genome-wise test were 10.5 for LK and ranged from 8.1 to 8.3 for PT, depending on the trait. CV, differed substantially between methods, led to different numbers of quantitative trait loci (QTL) to be detected. PT results in the least stringent CV compared at the same % level.

• Progress in Superconductivity
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• v.3 no.1
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• pp.5-12
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• 2001

Our experimental research focuses on manipulating pinning deflects to alter the phase diagram of vortex matter, creating new vortex phases. Vortex matter offers a unique opportunity for creating and studying these novel phase transitions through precise control of thermal, pinning and elastic energies. The vortex melting transition in untwinned YB $a_2$C $u_3$ $O_{7-}$ $\delta$/ crystals is investigated in the presence of disorder induced by particle irradiation. We focus on the low disorder regime, where a glassy state and a lattice state can be realized in the same phase diagram. We follow the evolution of the first order vortex melting transition line into a continuous transition line as disorder is increased by irradiation. The transformation is marked by an upward shift in the lower critical point on the melting line. With columnar deflects induced by heavy ion irradiation, we find a second order Bose glass transition line separating the vortex liquid from a Bose glass below the lower critical point. Furthermore, we find an upper threshold of columnar defect concentration beyond which the lower critical point and the first order melting line disappear together. With point deflect clusters induced by proton irradiation, we find evidence for a continuous thermodynamic transition below the lower critical point..

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.1-7
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• 2011

In this work, an analytical models for the threshold voltage and flat band voltage have been suggested and proved using 3-dimensional device simulator. The method for device design guideline and its example in nanowire junctionless transistor and example of device design of was also presented. One can find that the suggested model for threshold voltage and flat band voltage agrees with 3-dimension simulation results. The threshold voltage and flat band voltage are decreased with the increase of nanowire radius, gate oxide thickness, and channel impurity doping concentration. When the work function of gate material and the ratio of ON and OFF current is given, the device design guide line for nanowire junctionless transistor has been proposed. It is known that the device with high impurity channel concentration can be fabricated with th decreased of nanowire radius and gate oxide thickness.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.8
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• pp.72-78
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• 2009

We developed a line standards measurement system using an optical microscope and measured two kinds of line standards. It consists of three main parts: an optical microscope module including a CCD camera, a stage system with a linear encoder, and a measurement program for a microscopic image processing. The magnification of microscope part was calibrated using one-dimensional gratings and the angular motion of stage was measured to estimate the Abbe error. The threshold level in line width measurement was determined by comparing with certified values of a line width reference specimen, and its validity was proved through the measurement of another line width specimen. The expanded uncertainty (k=2) was about 100 nm in the measurements of $1{\mu}m{\sim}10{\mu}m$ line width. In the comparison results of line spacing measurement, two kinds of values were coincide within the expanded uncertainty, which were obtained by the one-dimensional measuring machine in KRISS and the line standards measurement system. The expanded uncertainty (k=2) in the line spacing measurement was estimated as $\sqrt{(0.098{\mu}m)^2+(1.8{\times}10^{-4}{\times}L)^2}$. Therefore, it will be applied effectively to the calibration of line standards, such as line width and line spacing, with the expanded uncertainty of several hundreds nanometer.

• International Journal of Ocean System Engineering
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• v.2 no.3
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• pp.139-150
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• 2012

This paper presents an improved guidance algorithm for autonomous underwater vehicles (AUV) in 3D space for generating smoother vehicle turn during the course change at the way-points. The way-point guidance by the line-of-sight (LOS) method has been modified for correcting the reference angles to achieve minimal calculation and smoother transition at the way-points. The algorithm has two phases in which the first phase brings the vehicle to converge to a distance threshold point on the line segment connecting the first two way-points and the next phase generates an angular path with smoother transition at the way-points. Then the desired angles are calculated from the reference and correction angles. The path points are regularly parameterized in the spherical coordinates and mapped to the Cartesian coordinates. The proposed algorithm is found to be simple and can be used for real time implementation. The details of the algorithm and simulation results are presented.