• Title/Summary/Keyword: line memory

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Design of line memory with low-temperature poly-silicon(LTPS) thin-film transistor (TFT) for system-on-glass (SoG)

  • Choi, Jin-Yong;Min, Kyung-Youl;Yoo, Chang-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.417-420
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    • 2007
  • A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively

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On-line Associative Memory Design For Temporal Pattern Storage and Classification (시변패턴의 저장과 인식을 위한 On-line 연상 메모리의 설계)

  • Yeo, Seong-Won;Lee, Chong-Ho
    • Proceedings of the KIEE Conference
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    • 1996.07b
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    • pp.1395-1397
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    • 1996
  • Many of the existing neural associative memories are trained and recalled in separate modes and are not suitable for temporal pattern storage and classification in that user must specify the time and length of input patterns. In this paper, a new on-line temporal associative memory model is presented. This memory is structured in layers of neurons and each neuron has limited number of weights so that calculation complexity can be considerably reduced and processing of patterns can be achieved in real time.

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A Design and Verification of an Efficient Control Unit for Optical Processor (광프로세서를 위한 효율적인 제어회로 설계 및 검증)

  • Lee Won-Joo
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.43 no.4 s.310
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    • pp.23-30
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    • 2006
  • This paper presents design andd verification of a circuit that improves the control-operation problems of Stored Program Optical Computer (SPOC), which is an optical computer using $LiNbO_3$ optical switching element. Since the memory of SPOC takes the Delay Line Memory (DLM) architecture and instructions that are needless of operands should go though memory access stages, SPOC memory have problems; it takes immoderate access time and unnecessary operations are executed in Arithmetic Logical Unit (ALU) because desired operations can't be selectively executed. In this paper, improvement on circuit has been achieved by removing the memory access of instructions that are needless of operands by decoding instructions before locating operand. Unnecessary operations have been reduced by sending operands to some specific operational units, not to all the operational units in ALD. We show that total execution time of a program is minimized by using the Dual Instruction Register(DIR) architecture.

Design of a 32-Bit eFuse OTP Memory for PMICs (PMIC용 32bit eFuse OTP 설계)

  • Kim, Min-Sung;Yoon, Keon-Soo;Jang, Ji-Hye;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.10
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    • pp.2209-2216
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    • 2011
  • In this paper, we design a 32-bit eFuse OTP memory for PMICs using MagnaChip's $0.18{\mu}m$ process. We solve a problem of an electrical shortage between an eFuse link and the VSS of a p-substrate in programming by placing an n-well under the eFuse link. Also, we propose a WL driver circuit which activates the RWL (read word-line) or WWL (write word-line) of a dual-port eFuse OTP memory cell selectively when a decoded WERP (WL enable for read or program) signal is inputted to the eFuse OTP memory directly. Furthermore, we reduce the layout area of the control circuit by removing a delay chain in the BL precharging circuit. We'can obtain an yield of 100% at a program voltage of 5.5V on 94 manufactured sample dies when measured with memory tester equipment.

Improved Design of Graphic Memory for QVGA-Scale LCD Driver IC (개선된 QVGA급 LCD Driver IC의 그래픽 메모리 설계)

  • Cha, Sang-Rok;Lee, Bo-Sun;Kim, Hak-Yoon;Choi, Ho-Yong
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.589-590
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    • 2008
  • This paper describes an improved design of graphic memory for QVGA ($320{\times}240\;RGB$) - scale 262k-color LCD Driver IC. A distributor block is adopted to reduce graphic RAM area, which is accomplished with 1/8 data lines of the previous structure. In line-read operation, the drivabilty of memory array cell is improved by partitioning a word line according to the row address. The proposed graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and verified using Hsim.

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Fabrication of Tern bit level SONOS F1ash memories (테라비트급 SONOS 플래시 메모리 제작)

  • Kim, Joo-Yeon;Kim, Byun-Cheul;Seo, Kwang-Yell;Kim, Jung-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.26-27
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    • 2006
  • To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

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Improvement of Memory by Dieckol and Phlorofucofuroeckol in Ethanol-Treated Mice: Possible Involvement of the Inhibition of Acetylcholinesterase

  • Myung Chang-Seon;Shin Hyeon-Cheol;Bao Hai Ying;Yeo Soo Jeong;Lee Bong Ho;Kang Jong Seong
    • Archives of Pharmacal Research
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    • v.28 no.6
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    • pp.691-698
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    • 2005
  • Phlorotannins, the polyphonic compounds found in brown Eisenia and Ecklonia algae, have several pharmacologically beneficial effects such as anti-inflammation. In addition, our recent data show that these compounds may improve the cognitive functions of aged humans suggesting the potential ability to enhance memory in several neurodegenerative disorders. To examine the experimental hypothesis that two effective components of Ecklonia cava, dieckol and phlorofucofuroeckol (PFF), have memory-enhancing abilities, both were administered orally to mice before a passive avoidance test. The repeated administration of either dieckol or PFF dose-dependently reduced the inhibition of latency by the administration of ethanol. To investigate the mode of memory-enhancing actions, the levels of major central neurotransmitters in three different regions (striatum, hippocampus, and frontal cortex) of the mouse brain were measured. The levels of some of the neurotransmitters were significantly changed by ethanol. Both dieckol and PFF altered the levels of some neurotransmitters modified by the ethanol treatment. It is noteworthy that both dieckol and PFF increased the level of acetylcho-line, and they exerted anticholinesterase activities. Overall, the memory-enhancing abilities of dieckol and PFF may result from, at least in part, the increment of the brain level of acetylcho-line by inhibiting acetylcholinesterase.

Improvement of Attention and Memory of Stroke Patient Using Smart Phone Applications : Single Case Study (스마트폰 어플리케이션을 이용한 뇌졸중 환자의 집중력과 기억력 증진: 단일 사례연구)

  • Lee, In-Seon
    • Therapeutic Science for Rehabilitation
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    • v.3 no.1
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    • pp.57-65
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    • 2014
  • Objective : In this study, to investigate the effect of Attention and Memory using a smart phone application intervention for stroke patients. Methods : single-subject experimental research was conducted using an ABA design. During the study, subject was applied to a total of 20 sessions with five times baseline, ten times intervention line, five times re-baseline. baseline and re-baseline did not have a separate intervention. During the intervetion line was trained by the application 'Master of memory(Numbers, Shapes, Fruits mode)' and 'Matching cute animals'. All sessions were evaluated an Attention and Memory using by 'Master of memory(Random mode)' and 'Memory free(Picture memory)' application. The resulting data was presented in graphs and descriptive statistics. Results : Implemented in all session, Attention and Memory assessment results showed the improvement of Attention and Memory in intervention line. Assessments conducted before and after the intervention, showed the improvement of Attention and Memory after the evaluation of interventions respectively. Conclusion : The results of this study are expected to be clinically useful. Follow-up studies on smart phone application intervention are needed for more targeted sampling study and conducted over a long period of time.

The Effects of kagamSinKiHwan(KSKH) Hot water extract & ultra-fine Powder on Proinflammatory cytokine of Microglia & Memory Deficit of Amnesia Mice Model (가감신기환(加減腎氣丸) 제형변화가 염증반응 사이토카인과 기억력감퇴에 미치는 영향)

  • Yim, Hyeon-Ju;Jung, In-Chul
    • Journal of Oriental Neuropsychiatry
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    • v.19 no.3
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    • pp.85-100
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    • 2008
  • Objective: This experiment was designed to investigate the effect of the KSKH hot water extract & ultra-fine powder on microglia and memory deficit model. Method: The effects of the KSKH hot water extract on expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA and production of IL-1$\beta$, IL-6, TNF-$\alpha$ in BV2 microglial cell line treated by lipopolysacchaide(LPS) were investigated. The effects of the KSKH hot water extract & ultra-fine-fine powder on the behavior of the memory deficit mice induced by scopolamine and AChE in serum of the memory deficit mice induced by scopolamine were investigated. Results: 1. The KSKH hot water extract suppressed the expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA in BV2 microglial cell line treated by LPS. 2. The KSKH hot water extract suppressed the production of IL-1$\beta$, IL-6, TNF-$\alpha$ in 100$\mu g/m\ell$ concentration of BV2 microglial cell line culture supernatant. 3. The KSKH hot water extract & ultra-fine powder decreased AChE activation significantly in the serum of the memory deficit mice induced by scopolamine. 4. The KSKH hot water extract & ultra-fine powder showed significant effect on memory impairment in the stop-through latency type of Morris water maze test. Conclusions: This experiment shows that the KSKH hot water extract & ultra-fine powder might be effective for the prevention and treatment of amnesia and Alzheimer's disease. Investigation into the clinical use of the KSKH hot water extract & ultra-fine powder for amnesia and Alzheimer's disease is suggested for future research.

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The Write Characteristics of SONOS NOR-Type Flash Memory with Common Source Line (공통 소스라인을 갖는 SONOS NOR 플래시 메모리의 쓰기 특성)

  • An, Ho-Myoung;Han, Tae-Hyeon;Kim, Joo-Yeon;Kim, Byung-Cheul;Kim, Tae-Geun;Seo, Kwang-Yell
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.35-38
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    • 2002
  • In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride, and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

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