• Title/Summary/Keyword: level shifter

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Improvement of Phase Noise for Oscillator Using Frequency Locked Loop (주파수 잠금회로를 이용한 발진기의 위상잡음 개선)

  • Kim, Wook-Lae;Lee, Chang-Dae;Kim, Yong-Nam;Im, Pyung-Soon;Lee, Dong-Hyun;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.7
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    • pp.635-645
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    • 2016
  • In this paper, we showed the phase noise of voltage controlled oscillator(VCO) can be radically improved using FLL(Frequency Locked Loop). At first, a 5 GHz VCO is fabricated using a hair-pin resonator. The fabricated VCO shows a phase noise of -53.1 dBc/Hz at 1 kHz frequency offset. In order to improve the phase noise of the fabricated VCO, a FLL is constructed using the feedback loop that consists of the VCO, a frequency detector composed of 5 GHz resonator, loop-filter, and level shifter. The fabricated FLL is designed to oscillate at a frequency of 5 GHz, and its measured phase noise is about -120.6 dBc/Hz at 1 kHz offset frequency. As a result, the phase noise of VCO can be radically improved by about 67.5 dB applying FLL. In addition, the measured phase noise performance is close to that of crystal oscillator.

Design of the Noise Margin Improved High Voltage Gate Driver IC for 300W Resonant Half-Bridge Converter (잡음 내성이 향상된 300W 공진형 하프-브리지 컨버터용 고전압 구동 IC 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.7-14
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    • 2008
  • In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

Reliability Evaluation of the WSW Device for Hot-carrier Immunity (핫-캐리어 내성을 갖는 WSW 소자의 신뢰성 평가)

  • 김현호;장인갑
    • Journal of the Korea Society of Computer and Information
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    • v.9 no.1
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    • pp.9-15
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    • 2004
  • New WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip. It came to light that the universality of the hot carrier degradation between DC and AC stress condition exists, which indicates that the device degradation comes from the same physical mechanism for both AC and DC stress. From this universality, AC lifetime under circuit operation condition can be estimated from DC hot carrier degradation characteristics.

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A Design of Gate Driver Circuits in DMPPT Control for Photovoltaic System (태양광 분산형 최대전력점 추적 제어를 위한 고전압 게이트 드라이버 설계)

  • Kim, Min-Ki;Lim, Shin-Il
    • Journal of Korea Society of Industrial Information Systems
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    • v.19 no.3
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    • pp.25-30
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    • 2014
  • This paper describes the design of gate driver circuits in distributed maximum power point tracking(DMPPT) controller for photovoltaic system. For the effective DMPPT control in the existence of shadowed modules, high voltage gate driver is applied to drive the DC-DC converter in each module. Some analog blocks such as 12-b ADC, PLL, and gate driver are integrated in the SoC for DMPPT. To reduce the power consumption and to avoid the high voltage damage, a short pulse generator is added in the high side level shifter. The circuit was implemented with BCDMOS 0.35um technology and can support the maximum current of 2A and the maximum voltage of 50V.

Temperature Analysis of the Voltage Contolled Chaotic Circuit (전압 제어형 카오스회로의 온도특성 해석)

  • Park, Yongsu;Zhou, Jichao;Song, Hanjung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.8
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    • pp.3976-3982
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    • 2013
  • This paper presents a temperature analysis of the chaotic behavior in the voltage controlled CMOS chaotic circuit. The circuit is based on a simple nonlinear function block which is needed for chaotic signal generation. It consists of a NFB (nonlinear function block), a level shifter and non-overlapping two-phase clock for sample and hold. By SPICE simulation, chaotic dynamics such as frequency spectra and bifurcations according to the temperature variations were analyzed. And, it was showed that the circuit can generate discrete chaotic signals within control voltage in the range from 1.2 V to 2.3 V in a specific temperature condition of $25^{\circ}C$.

Development of World's Largest 21.3' LTPS LCD using Sequential Lateral Solidification(SLS) Technology

  • Kang, Myung-Koo;Kim, Hyun-Jae;Chung, Jin-Koo;Kim, Dong-Beom;Lee, Su-Kyung;Kim, Cheol-Ho;Chung, Woo-Seok;Hwang, Jang-Won;Joo, Seung-Yong;Meang, Ho-Seok;Song, Seok-Chun;Kim, Chi-Woo;Chung, Kyu-Ha
    • Journal of Information Display
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    • v.4 no.4
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    • pp.4-7
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

Characteristic Analysis and Control of Three Phase PWM Buck AC-AC Converter (3상 PWM Buck AC-AC 컨버터의 특성해석과 제어)

  • 최남섭
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.6
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    • pp.1283-1290
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    • 2003
  • Recently, PWM Buck AC-AC Converter is widely employed in various industrial applications such as voltage and power regulator, electronic transformer, phase shifter and so on. This paper presents static and dynamic modeling and complete characteristic analysis of a PWM Buck AC-AC converter. Firstly, the three phase converter system is modelled by using DQ transformation whereby we can obtain basic characteristic equations such as voltage gain and power factor as well as state equation and transfer function for control. Secondly, based on the analysis, the feedforward-feedback control technique is also proposed to obtain instantaneous duty level change whereby very fast dynamic response is achieved. Finally, the experimental results show the validity of the modeling, analysis and control.

Development of World's Largest 21.3' LTPS LCD Using Sequential Lateral Solidification (SLS) Technology

  • Kang, Myung-Koo;Kim, H.J.;Chung, J.K.;Kim, D.B.;Lee, S.K.;Kim, C.H.;Chung, W.S.;Hwang, J.W.;Joo, S.Y.;Maeng, H.S.;Song, S.C.;Kim, C.W.;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.241-244
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

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Design of the High Voltage Gate Driver IC for 300W Half-Bridge Converter Using $1{\mu}m$ BCD 650V process ($1{\mu}m$ BCD 650V 공정을 이용한 300W 하프-브리지 컨버터용 고전압 구동IC의 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.463-464
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    • 2008
  • As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

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Integrated Sliding-Mode Sensorless Driver with Pre-driver and Current Sensing Circuit for Accurate Speed Control of PMSM

  • Heo, Sewan;Oh, Jimin;Kim, Minki;Suk, Jung-Hee;Yang, Yil Suk;Park, Ki-Tae;Kim, Jinsung
    • ETRI Journal
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    • v.37 no.6
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    • pp.1154-1164
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    • 2015
  • This paper proposes a fully sensorless driver for a permanent magnet synchronous motor (PMSM) integrated with a digital motor controller and an analog pre-driver, including sensing circuits and estimators. In the motor controller, a position estimator estimates the back electromotive force and rotor position using a sliding-mode observer. In the pre-driver, drivers for the power devices are designed with a level shifter and isolation technique. In addition, a current sensing circuit measures a three-phase current. All of these circuits are integrated in a single chip such that the driver achieves control of the speed with high accuracy. Using an IC fabricated using a $0.18{\mu}m$ BCDMOS process, the performance was verified experimentally. The driver showed stable operation in spite of the variation in speed and load, a similar efficiency near 1% compared to a commercial driver, a low speed error of about 0.1%, and therefore good performance for the PMSM drive.