대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2008년도 하계종합학술대회
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- Pages.463-464
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- 2008
$1{\mu}m$ BCD 650V 공정을 이용한 300W 하프-브리지 컨버터용 고전압 구동IC의 설계
Design of the High Voltage Gate Driver IC for 300W Half-Bridge Converter Using $1{\mu}m$ BCD 650V process
- 송기남 (경상대학교) ;
- 박현일 (경상대학교) ;
- 이용안 (경상대학교) ;
- 김형우 (한국전기연구원) ;
- 김기현 (한국전기연구원) ;
- 서길수 (한국전기연구원) ;
- 한석붕 (경상대학교)
- Song, Ki-Nam (Gyeongsang National Univ) ;
- Park, Hyun-Il (Gyeongsang National Univ) ;
- Lee, Yong-An (Gyeongsang National Univ) ;
- Kim, Hyoung-Woo (Korea Electrotechnology Research Institute) ;
- Kim, Ki-Hyun (Korea Electrotechnology Research Institute) ;
- Seo, Kil-Soo (Korea Electrotechnology Research Institute) ;
- Han, Seok-Bung (Gyeongsang National Univ.)
- 발행 : 2008.06.18
초록
As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using
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