Design of the High Voltage Gate Driver IC for 300W Half-Bridge Converter Using $1{\mu}m$ BCD 650V process

$1{\mu}m$ BCD 650V 공정을 이용한 300W 하프-브리지 컨버터용 고전압 구동IC의 설계

  • Published : 2008.06.18

Abstract

As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

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