• Journal of Electrical Engineering and Technology
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• 제7권3호
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• pp.401-405
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• 2012

Current research about voltage leakage involves investigation of the effects of leaked voltage and current on humans through simulated environments and dummies. Electrocution results from leaked current when electricity flows through the body as a result of potential difference. Research that analyzes actual electrocution is insufficient because of the danger from leaked voltage present in the leakage area. This thesis analyzes magnetic flux density from current around a leak to investigate the distribution of current. The authors used a simulated environment to investigate electrocution accidents that frequently occur during floods through leakage along metal surfaces, and evaluated the distribution of leaked magnetic flux.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권9호
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• pp.464-469
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• 2004

The leakage current of transmission insulators contaminated with salt, clay, and kaolin was examined in the Gochang's Long Periods Testing Center. The Insulators were artificially contaminated and estimated with the method of equivalent salt deposit density(ESDD). The artificially contaminated insulators were installed with the same condition as in the real transmission power line and applied with 154 (kV). The leakage current of the artificially contaminated insulators was measured with environment conditions, such as temperature and humidity by the a automatic leakage current detecting system. The leakage current of heavily contaminated insulator was abruptly increased above 72［%］ of humidity, even though the leakage current was similar between the contaminated and non-contaminated insulators below 72［%］ of humidity. Also, it was found that the humidity was much more important than the temperature in the leakage current of transmission insulators. The leakage current of contaminated insulator was decreased when it was plenty of rainfall, resulting from natural washing.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.148-148
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• 2009

In order to investigate the quality in compliance with an electric leakage electric current from the electric leakage area after conferring the electric leakage environment in compliance with a flooding when the electric leakage electric current exists in the surface, it investigated the electric leakage electric current quality from the electric current distribution and flooded districts from the present paper. At the result, we have known that flux density is constant regardless of distance variation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1250-1252
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• 1993

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

• 전기학회논문지
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• 제61권9호
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• pp.1306-1313
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• 2012

This paper reports the contamination performance of two distribution arresters (new and used ones) tested under three different contaminant conditions - clean fog, ESDD (equivalent salt deposit density) level (A, B, C, and D), and kaolin contamination conditions, and their leakage current, total leakage current, and component of the resistive leakage current were measured in order to diagnose arrester deterioration. The 3rd harmonics was larger than 5th and 7th ones for the arrester under the clean fog, and as the ESDD contamination level was applied, 5th one became relatively larger than 3rd one. Therefore, these results indicated that the resistive leakage current could be used for the diagnosis of the arresters.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.2068-2069
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• 2007

This study describes a compairison leakage current properties between a polluted insulator and insulator subjected to salt polluted condition. Exposure tests at a sea coast test and the leakage current of insulators, climate conditions, and salt deposit density were measured during the tests. Appearance of leakage current for the insulator was affected by the humidity and the salt deposition on the surface. comparison of leakage current under salt polluted conditions. salt polluted test and humidity tests were carried out in laboratory using the same insulator profiles in oder to determine the leakage current patterns during critical conditions

• Membrane and Water Treatment
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• 제1권1호
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• pp.13-37
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• 2010

The performance of an electrodialyzer for concentrating seawater is predicted by means of a computer simulation, which includes the following five steps; Step 1 mass transport; Step 2 current density distribution; Step 3 cell voltage; Step 4 NaCl concentration in a concentrated solution and energy consumption; Step 5 limiting current density. The program is developed on the basis of the following assumption; (1) Solution leakage and electric current leakage in an electrodialyzer are negligible. (2) Direct current electric resistance of a membrane includes the electric resistance of a boundary layer formed on the desalting surface of the membrane due to concentration polarization. (3) Frequency distribution of solution velocity ratio in desalting cells is equated by the normal distribution. (4) Current density i at x distant from the inlets of desalting cells is approximated by the quadratic equation. (5) Voltage difference between the electrodes at the entrance of desalting cells is equal to the value at the exits. (6) Limiting current density of an electrodialyzer is defined as average current density applied to an electrodialyzer when current density reaches the limit of an ion exchange membrane at the outlet of a desalting cell in which linear velocity and electrolyte concentration are the least. (7) Concentrated solutions are extracted from concentrating cells to the outside of the process. The validity of the computer simulation model is demonstrated by comparing the computed results with the performance of electrodialyzers operating in salt-manufacturing plants. The model makes it possible to discuss optimum specifications and operating conditions of a practical-scale electrodialyzer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.