A Study on the Modeling of Leakage Current in Polysilicon TFT

다결정 실리콘 TFT의 누설전류 모델링에 관한 연구

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.