• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.4
• /
• pp.61-70
• /
• 1998

The electrical performance of a package is extremely important for high speed digital system operations. CSP(chip scale package) is known to have better electrical performance than the convnetional packages. In this paper, the electrical performance of the BLP(bottom leaded plastic) package, a kind of CSP, has been alayzed by both simulation and real measurement. The electrical perfdormance of a BLP was compared with that of the conventioanl TSOP(thin small outline package). The leadinductanceand lead capacitance were used for the comparison purposes. The new BLP design provides much better electrical performance that TSOP package. It has about 40% favorable parameter values.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.10
• /
• pp.4378-4384
• /
• 2012

In LED chip packaging, die bonding is a very important process which fixes the LED chip on the lead frame to provide enough strength for the next process. This paper focuses on the process optimization of a LED die bonding, which attaches small zener diode chip on PLCC LED package frame, using response surface analysis. Design of experiment (DOE) of 5 factors, 3 levels and 5 responses are considered, and the results are investigated. As the results, optimal conditions those satisfy all response objects can be derived.

• Electrical & Electronic Materials
• /
• v.10 no.6
• /
• pp.519-527
• /
• 1997

The micro crack was occurred where the stress concentrated by the thermal stress which was induced during the cooling period after molding process or by the various reliability tests. In order to estimate the possibility of development from inside micro crack to outside fracture, the fracture toughness of EMC should be measured under the various applicable condition. But study was conducted very rarely for the above area. In order to provide a was to decide the fracture resistance of EMC (Epoxy Molding Compound) of plastic package which is produced by using transfer molding method, measuring fracture is studied. The specimens were made with various EMC material. The diverse combination of test conditions, such as different temperature, temperature /humidity conditions, different filler shapes, and post cure treatment, were tried to examine the effects of environmental condition on the fracture toughness. This study proposed a way which could improve the reliability of LOC(Lead On Chip) type package by comparing the measured $J_{IC}$ of EMC and the calculated J-integral value from FEM(Finite Element Method). The measured $K_{IC}$ value of EMC above glass transition temperature dropped sharply as the temperature increased. The $K_{IC}$ was observed to be higher before the post cure treatment than after the post cure treatment. The change of $J_{IC}$ was significant by time change. J-integral was calculated to have maximum value the angle of the direction of fracture at the lead tip was 0 degree in SOJ package and -30 degree in TSOP package. The results FEM simulation were well agreed with the results of measurement within 5% tolerance. The package crack was proved to be affected more by the structure than by the composing material of package. The structure and the composing material are the variables to reduce the package crack.ack.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.3
• /
• pp.17-26
• /
• 2010

Pb-Sn solder is rapidly being replaced by lead-free solder for board-level interconnection in microelectronic package assemblies due to the environmental protection requirement. There is a general lack of mechanical reliability information available on the lead-free solder. In this study, thermo-mechanical behaviors of wire-bond plastic ball grid array (WB-PBGA) package assemblies are characterized by high-sensitivity moire interferometry. Experiments are conducted for two types of WB-PBGA packages that have Pb-Sn solder and lead-free solder as joint interconnections. Using real-time moire setup, fringe patterns are recorded and analyzed for several temperatures. Bending deformations of the assemblies and average strains of the solder balls are investigated and compared for the two type of WB-PBGA package assemblies. Results show that shear strain in #3 solder ball located near the chip shadow boundary is dominant for the failure of the package with Pb-Sn solder, while normal strain in #7 most outer solder ball is dominant for that with lead-free solder. It is also shown that the package with lead-free solder has much larger bending deformation and 10% larger maximum effective strain than the package with Pb-Sn solder at same temperature level.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.4
• /
• pp.124-130
• /
• 2023

Recently, fan out wafer level packaging, which enables high integration, miniaturization, and low cost, is being rapidly applied in the semiconductor industry. In particular, FOWLP is attracting attention in the mobile and Internet of Things fields, and is recognized as a core technology that will lead to technological advancements such as 5G, self-driving cars, and artificial intelligence in the future. However, as chip density and package size within the package increase, FOWLP warpage is emerging as a major problem. These problems have a direct impact on the reliability and electrical performance of semiconductor products, and in particular, cause defects such as vacuum leakage in the manufacturing process or lack of focus in the photolithography process, so technical demands for solving them are increasing. In this paper, warpage simulation according to the thickness of FOWLP material was performed using finite element analysis. The thickness range was based on the history of similar packages, and as a factor causing warpage, the curing temperature of the materials undergoing the curing process was applied and the difference in deformation due to the difference in thermal expansion coefficient between materials was used. At this time, the stacking order was reflected to reproduce warpage behavior similar to reality. After performing finite element analysis, the influence of each variable on causing warpage was defined, and based on this, it was confirmed that warpage was controlled as intended through design modifications.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.111-114
• /
• 2001

Optical transmitter and receiver are the essential components for optical communication. For these components, butterfly type packages are used which are comprised of metal housing, multilayer ceramic inserts, lead and window. In this study, 2.5 Gbps DFB(Distributed -Feedback) LD(Laser Diode) package was fabricated and characterized. Metal housing showed good thermal conductivity (200W/mK) and well matched TCE(6.7ppm/K) with GaAs chip. Ceramic inserts also showed good VSWR(Voltage Standing Wave Ratio) characteristics(<2.0). By brazing technology, all the elements were combined and sealed. RF characteristics of the package mounted on the PWB was also tested.

• Proceedings of the KWS Conference
• /
• 2006.05a
• /
• pp.218-220
• /
• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2004.09a
• /
• pp.233-241
• /
• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2004.09a
• /
• pp.211-219
• /
• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.4
• /
• pp.1-4
• /
• 2009

This work shows how the adoption of a dual-dicing process for silicon wafer separation affects the thermal-cycling reliability (i.e. $-65^{\circ}C$ to $150^{\circ}C$) of the semiconductor devices utilizing lead-on-chip (LOC) die attach technique. In-situ examinations show that conventional single-dicing process directly attacks the edge region of diced devices but dual-dicing process effectively protects the edge region of diced devices from dicing-induced mechanical damage. Probably, this is because the preferential and sacrificial fracture of notched regions induced on the active surface of wafers saves the edge regions. It was also investigated through thermal-cycling tests that the number of thermal-cycling induced failures is much lower at the dual-dicing process than the single-dicing process.