• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.273-279
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• 2006

High-$T_c$ superconducting (HTSC) power cable is one of the interesting parts in power application using HTSC wire. However, its stacked structure makes the current distribution between conducting layers non-uniform due to difference between self inductances of conducting layers and mutual inductances between two conducting layers, which results in lower current transmission capacity of HTSC power cable. In this paper, the transport current distribution between conducting layers was investigated through the numerical analysis for the equivalent circuit of HTSC power cable with a shield layer, and compared with the case of without a shield layer. The transport current distribution due to the increase of the contact resistance in each layer was improved. However, its magnetization loss increased as the contact resistance increased. It was confirmed from the analysis that the shield layer was contributed to the improvement of the current distribution between conducting layers if the winding direction and the pitch length were properly chosen.

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국재료학회지
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• 제28권2호
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

• 한국재료학회지
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• 제12권3호
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• pp.190-194
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• 2002

InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.

• 한국재료학회지
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• 제17권9호
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• pp.463-468
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• 2007

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.

• Macromolecular Research
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• 제13권5호
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• pp.367-372
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• 2005

As a preliminary work for the preparation of nylon 6/c1ay nanocomposites by reactive extrusion, nylon 6/c1ay nanocomposites were prepared by anionic polymerization in a flask. In order to investigate the effect of the intercalation of clay layers, the clay feeding times, such as in pre-mixing where the clay was fed before initiation of polymerization and in after-mixing method where the clay was fed after initiation of polymerization, were changed. The appearance of the WAXD peak of nanocomposites prepared by the pre-mixing method was obvious and the tensile strength was decreased compared with that of pure nylon 6, which indicates that the clay layers were not dispersed and distributed. During the preparation of the nanocomposites by the after-mixing method, disordering of the clay layers was observed with increasing clay addition time and was suspected to result from the rapid polymerization of nylon 6 within the clay layers.

• 한국표면공학회지
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• 제36권2호
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• pp.116-121
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• 2003

Ti-Si-N coating layers were deposited onto WC-Co substrates by a hybrid system of arc ion plating (AIP) and sputtering techniques. The tribological behaviors of Ti-Si-N coating layers with various Si contents were investigated by the dry sliding wear experiments, which were conducted at three different sliding speeds, 0.1, 0.3, 0.5 m/s, against the steel and alumina balls. In the case of steel ball, the average friction coefficient slightly decreased with increasing the sliding speed regardless of Si content due to adhesive wear behavior between coating layer and steel ball. At constant sliding speed, the average friction coefficient decreased with increase of Si content. On the contrary, in the case of alumina ball, the average friction coefficient increased with increasing the sliding speed regardless of Si content, indicating that the abrasive wear behavior was more dominant when the coating layers slide against alumina ball. Through these experimental results, it was found that the tribological behaviors of Ti-Si-N coating layers were effected by factors such as Si content, sliding speed, and kinds of counterpart materials rather than the hardness of coating layer.

• Corrosion Science and Technology
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• 제13권3호
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• pp.102-106
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• 2014

Nickel electrodeposition from sulfamate bath has several benefits such as low internal stress, high current density and good ductility. In nickel deposited layers, sulfur induces high temperature embrittlement, as Ni-S compound has a low melting temperature. To overcome high temperature embrittlement problem, adding manganese is one of the good methods. Manganese makes Mn-S compound having a high melting temperature above $1500^{\circ}C$. In this work, the mechanical properties of Ni-Mn deposited layers were investigated by using various process variables such as concentration of Mn$(NH_2SO_3)_2$, current density, and bath temperature. As the Mn content of electrodeposited layers was increased, internal stress and hardness were increased. By increasing current density, internal stress increased, but hardness decreased. With increasing the bath temperature from 55 to $70^{\circ}C$, internal stress of Ni deposit layers decreased, but hardness didn't change by bath temperature. It was likely that eutectoid manganese led to lattice deformation, and the lattice deformation increased hardness and internal stress in Ni-Mn layers. Increasing current density and decreasing bath temperature would increase a mount of $H_2$ absorption, which was a cause for the rise of internal stress.

• Geomechanics and Engineering
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• 제12권2호
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• pp.327-346
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• 2017

Laminated plates have many applications in different industrials. Buckling analysis of these structures with the nano-scale reinforcement has not investigated yet. However, buckling analysis of embedded laminated plates with nanocomposite layers is studied in this paper. Considering the single-walled carbon nanotubes (SWCNTs) as reinforcement of layers, SWCNTs agglomeration effects and nonlinear analysis using numerical method are the main contributions of this paper. Mori-Tanaka model is applied for obtaining the equivalent material properties of structure and considering agglomeration effects. The elastic medium is simulated by spring and shear constants. Based on first order shear deformation theory (FSDT), the governing equations are derived based on energy method and Hamilton's principle. Differential quadrature method (DQM) is used for calculating the buckling load of system. The effects of different parameters such as the volume percent of SWCNTs, SWCNTs agglomeration, number of layers, orientation angle of layers, elastic medium, boundary conditions and axial mode number of plate on the buckling of the structure are shown. Results indicate that increasing volume percent of SWCNTs increases the buckling load of the plate. Furthermore, considering agglomeration effects decreases the buckling load of system. In addition, it is found that the present results have good agreement with other works.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.537-540
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• 1999

Effect of alignment layers on pretilt angle generation and electrical characteristics in nematic liquid crystal(NLC) by using photo-alignment techniques on polyimide (PI) surface with side chain were studied. The generated pretilt angle of the NLC on rubbed PI surface with 1-layer is almost the same as that of the 2-layers. However, the generated pretilt angle of the NLC on photo-induced PI surface with 2-layers is larger than that of the 1-layer. Therefore, the pretilt angle of the NLC on photo-induced PI surface is attributed to surface roughness due to photo-depolymerization of the polymer with UV light irradiation on PI surface. Next we observed the same characteristics of voltage-transmittance (V-T) and response time for 1- and 2-layers on PI surface. We also observed the same voltage holding ratio (VHR) characteristics for 1- and 2-layers on photo-aligned PI surface. Consequently, we suggest that the VHR of photo-aligned TN-LCD is higher than that of the rubbing-aligned TN-LCD.