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http://dx.doi.org/10.3740/MRSK.2002.12.3.190

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers  

Kim, Hyeon-Su (Department of Physics, Gyeongsang National University)
Lee, Jeong-Ju (Department of Physics, Gyeongsang National University)
Jeong, Sun-Yeong (Department of Physics, Gyeongsang National University)
Lee, Jeong-Yong (Dept. of Materials Engineering, Korea Advanced Institute of Science and Technology)
Lin, J.Y. (Department of Physics, Kansas State University)
Jiang, H.X. (Department of Physics, Kansas State University)
Publication Information
Korean Journal of Materials Research / v.12, no.3, 2002 , pp. 190-194 More about this Journal
Abstract
InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.
Keywords
III-nitride semiconductors; MOCVD; Photoluminescence; multi-layers;
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1 M. Smith, G.D. Chen, J.Y. Lin, H.X. Jiang, M.A. Khan, and Q. Chen, Appl. Phys. Lett. 69, 2837 (1996)   DOI   ScienceOn
2 T. Wang, D. Nakagawa, J. Wang, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 73, 3571 (1998)   DOI   ScienceOn
3 Y. Narukawa, Y. Kawakami, S. Fujita, and S. Nakamura, Phys. Rev. B55, R1938 (1997)   DOI   ScienceOn
4 C.-C. Chuo, C.-M. Lee, T.-E. Nee, and J.-I. Chyi, Appl. Phys. Lett. 76, 3902 (2000)   DOI   ScienceOn
5 R.W. Martin, P.G. Middleton, K.P. O'Donnell, and W. Van der Stricht, Appl. Phys. Lett. 74, 263 (1999)   DOI   ScienceOn
6 K.P. O'Donnell, R.W. Martin, and P.G. Middleton, Phys. Rev. Lett. 82, 237 (1999) doi:   DOI   ScienceOn
7 G. Popovici, H. Morkoc, and N. Mohammad, in Group III Nitride Semiconductor Compounds. ed. B. Gil (Oxford University Press, New York, USA, 1998) p. 21
8 S. Chichibu, T. Sota, K. Wada, and S. Nakamura, J. Vac. Sci. Technol. B16, 2204 (1998)   DOI   ScienceOn
9 K.S. Kim, C.-H. Hong, W.-H. Lee, C.S. Kim, O.H. Cha, G.M. Yang, E.-K. Suh, K.Y. Lim, H.J. Lee, H.K. Cho, J.Y. Lee, and J.M. Seo, MRS Intrnet J. Nitride Semicond. Res. 5S1, W11.74 (2000)
10 H.C. Yang, P.F. Kuo, T.Y. Lin, Y.F. Chen, K.H. Chen, L.C. Chen, and J.-I. Chyi, Appl. Phys. Lett. 76, 3712 (2000)   DOI   ScienceOn
11 O. Alotas, W. Kim, Z. Fan, A. Bothkarev, A. Sulvador, S. N. Mohammad, B. Sverdlov, and H. Morkoc, Electron. Lett. 31, 1389 (1995)   DOI   ScienceOn
12 T. Saito and Y. Arakawa, Phys. Rev. B60, 1701 (1999)   DOI
13 M. Tchounkeu, O. Briot, B. Gil, J. Alexis, and R. Anlombard, J. Appl. Phys. 80, 5352 (1996)   DOI   ScienceOn
14 A. Koukitu, N. Takahashi, T. Taki, and H. Seki, J. Cryst. Growth 170, 206 (1997)   DOI   ScienceOn
15 F. Scholz, V. Harle, F. Steuber, H. Boley, A. Dornen, B. Kaufmann, V. Syganow, and A. Hangleiter, J. Cryst. Growth 170, 321 (1997)   DOI   ScienceOn
16 H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994)   DOI   ScienceOn
17 S.D. Lester, F.A. Ponce, M.G. Crawford, and D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995)   DOI   ScienceOn
18 S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, J. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Appl. Phys. Lett. 68, 2105 (1996) doi:   DOI
19 I. Lo, K.Y. Hsieh, S.L. Hwang, L.W. Tu, C. Mitchel, and A.W. Saxler, Appl. Phys. Lett. 74, 2167 (1999)   DOI   ScienceOn
20 O. Ambacher, J. Phys. D: Appl. Phys. 31, 2653 (1998)   DOI   ScienceOn
21 I. Ho and G.B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996)   DOI   ScienceOn
22 S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, and T. Sota, Appl. Phys. Lett. 73, 2006 (1998)   DOI   ScienceOn
23 N.A. El-Masry, E.L. Piner, S.X. Liu, and S.M. Bedair, Appl. Phys. Lett. 72, 40 (1998)   DOI   ScienceOn
24 S. Nakamura, Science 281, 956 (1998)   DOI   ScienceOn
25 M.D. McCluskey, L.T. Romano, B.S. Krusor, D.P. Bour, N.M. Johnson, and S. Brennan, Appl. Phys. Lett. 72, 1730 (1998)   DOI   ScienceOn
26 T. Takeuchi, S. Sato, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., part 2, 36, L382 (1997)   DOI   ScienceOn